浏览全部资源
扫码关注微信
Eu掺杂SiCxOy薄膜的Eu3+发光机制
Excitation Mechanism of Eu3+ Photoluminescence from Eu Doped Silicon Oxycarbide Film
- 发光学报 2017年38卷第8期 页码：1010-1014
- 作者机构：
1. 太原理工大学 物理与光电工程学院,山西 太原,030006
2. 韩山师范学院 材料科学与工程学院,广东 潮州,521041
- 作者简介：
- 基金信息：国家自然科学基金（61274140，61306003）();广东省自然科学基金（2015A030313871）();广东高校优秀青年创新人才培养计划（YQ2015112
DOI：10.3788/fgxb20173808.1010
中图分类号： O469;O482.31纸质出版日期：2017-8-5，
收稿日期：2016-12-28，
修回日期：2017-3-11，
扫 描 看 全 文
王岩, 林圳旭, 宋捷等. Eu掺杂SiC<sub><em>x</em></sub>O<sub><em>y</em></sub>薄膜的Eu<sup>3+</sup>发光机制[J]. 发光学报, 2017,38(8): 1010-1014
WANG Yan, LIN Zhen-xu, SONG Jie etc. Excitation Mechanism of Eu<sup>3+</sup> Photoluminescence from Eu Doped Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(8): 1010-1014
王岩, 林圳旭, 宋捷等. Eu掺杂SiC<sub><em>x</em></sub>O<sub><em>y</em></sub>薄膜的Eu<sup>3+</sup>发光机制[J]. 发光学报, 2017,38(8): 1010-1014 DOI： 10.3788/fgxb20173808.1010.
WANG Yan, LIN Zhen-xu, SONG Jie etc. Excitation Mechanism of Eu<sup>3+</sup> Photoluminescence from Eu Doped Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(8): 1010-1014 DOI： 10.3788/fgxb20173808.1010.
摘要
利用磁控溅射技术在低温250℃下制备Eu掺杂SiC
x
O
y
薄膜，研究薄膜的Eu
3+
发光激发机制。实验结果表明，薄膜的发光谱由来自基体材料的蓝光和来自Eu
3+
的红光组成；随着薄膜中Eu含量由0.19%增加到2.27%，其红光强度增加3倍左右，而蓝光逐渐减弱。Raman光谱及荧光瞬态谱分析表明，其蓝光由中立氧空位缺陷发光中心引起。结合薄膜的Eu
3+
激发光谱分析，SiC
x
O
y
：Eu薄膜的红光增强源于薄膜中Eu
3+
离子浓度的增加和/或基体材料的中立氧空位缺陷发光中心与Eu
3+
离子的能量转移。
Abstract
Eu doped silicon oxycarbide (SiC
x
O
y
:Eu) films were fabricated by magnetron sputtering at a low temperature of 250℃. The excitation mechanism of Eu
3+
photoluminescence (PL) from SiC
x
O
y
:Eu was investigated. The spectra of all the SiC
x
O
y
:Eu films contain two PL bands:the blue band originated from the host matrix and Eu
3+
red PL band. With the increasing of the content of Eu from 0.19% to 2.27%
the red PL intensity is enhanced more than three times
while the blue PL intensity gradually decreases. The analysis results of Rama spectra and time-resolved PL show that the blue PL mainly originates from neutral oxygen vacancy (NOV) defect centers in the SiC
x
O
y
matrix. Combining with the PLE results
the enhanced red light emission is suggested from the increased concentration of Eu
3+
ions and/or the energy transfer between the NOV defect centers and optically active Eu
3+
ions.
关键词
光致发光铕掺杂碳氧化硅能量转移
Keywords
photoluminescenceeuropium dopantsilicon oxycarbideenergy transfer
references
SUN J M, SKORUPA W, DEKORSY T, et al.. Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices[J]. J. Appl. Phys., 2005, 97(12):123513-1-7.
HUANG R, SONG J, WANG X, et al.. Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride[J]. Opt. Lett., 2012, 37(4):692-694.
XU K K, YU Q, LI G. Increased efficiency of silicon light-emitting device in standard Si-CMOS technology[J]. IEEE J. Quantum. Electron., 2015, 51(8):3000106-1-6.
LIN S B, ZHANG X W, ZHANG P, et al.. High-efficiency near-infrared emission from bismuth-doped SiO0.73 thin films fabricated by ion implantation technology[J]. Opt. Lett., 2016, 41(3):630-633.
SUGIMOTO H, ZHANG R, REINHARD B M, et al.. Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering[J]. Appl. Phys. Lett., 2015, 107(4):041111-1-4.
WANG X, HUANG R, SONG C, et al.. Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures[J]. Appl. Phys. Lett., 2013, 102(8):081114-1-4.
XU L B, JIN L, LI D S, et al.. Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films[J]. Appl. Phys. Lett., 2013, 103(7):071101-1-4.
NAZAROV A N, TIAGULSKYI S I, TYAGULSKYY I P, et al.. The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices[J]. J. Appl. Phys., 2010, 107(12):123112-1-14.
XU L B, JIN L, LI D S, et al.. Sensitization of Er3+ ions in silicon rich oxynitride films:effect of thermal treatments[J]. Opt. Express, 2014, 22(11):13022-13028.
王兴军, 周治平. 硅基光电集成用铒硅酸盐化合物光源材料和器件的研究进展[J]. 中国光学, 2014, 7(2):274-280. WANG X J, ZHOU Z P. Research progress of Er silicate compound light source materials and devices for silicon photonics application[J]. Chin. Opt., 2014, 7(2):274-280. (in Chinese)
REBOHLE L, LEHMANN J, PRUCNAL S, et al.. Blue and red electroluminescence of europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure[J]. Appl. Phys. Lett., 2008, 93(7):071908-1-3.
BELLOCCHI G, FRANZ G, MIRITELLO M, et al.. White light emission from Eu-doped SiOC films[J]. Appl. Phys. Express, 2013, 7(1):012601-1-3.
PRUCNAL S, SUN J M, SKORUPA W, et al.. Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu[J]. Appl. Phys. Lett., 2007, 90(18):181121-1-3.
BREGOLIN F L, SIAS U S, BEHAR M. Photoluminescence and structural studies of Tb and Eu implanted at high temperatures into SiO2 films[J]. J. Lumin., 2013, 135:232-238.
BONINELLI S, BELLOCCHI G, FRANZ G, et al.. New strategies to improve the luminescence efficiency of Eu ions embedded in Si-based matrices[J]. J. Appl. Phys., 2013, 113(14):143503-1-8.
BELLOCCHI G, IACONA F, MIRITELLO M, et al.. SiOC thin films:an efficient light source and an ideal host matrix for Eu2+ ions[J]. Opt. Express, 2013, 21(17):20280-20290.
LIN Z X, HUANG R, WANG H P, et al.. Dense nanosized europium silicate clusters induced light emission enhancement in Eu-doped silicon oxycarbide films[J]. J. Alloys Compd., 2017, 694:946-951.
SONG D Y, CHO E C, CHO Y H, et al.. Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix[J]. Thin Solid Films, 2008, 516(12):3824-3830.
ZHANG H T, XU Z Y. Structural and optical properties of four-hexagonal polytype nanocrystalline silicon carbide films deposited by plasma enhanced chemical vapor deposition technique[J]. Thin Solid Films, 2004, 446(1):99-105.
HUANG R, LIN Z W, GUO Y Q, et al.. Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics[J]. Opt. Mater. Express, 2014, 4(2):205-212.
LIN Z X, GUO Y Q, SONG J, et al.. Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films[J]. J. Non-Cryst. Solids, 2015, 428:184-188.
0
浏览量
55
下载量
1
CSCD
- 网络PDF下载
- Meta-XML下载
- BibTeX下载
- Endnote下载
- RefMan 下载
- NoteExpress下载
- NoteFirst下载
关联资源
相关文章
相关作者
相关机构
- 地址：长春市经济技术开发区东南湖大路3888号 邮编：130033
- 联系电话：0431-86176862 Email：fgxbt@126.com
- 本系统由Light学术出版中心、北京北大方正电子有限公司共建 吉ICP备11002662号-17
京公网安备11010802024621 - 本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
- Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies
