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1. 太原理工大学 物理与光电工程学院,山西 太原,030006
2. 韩山师范学院 材料科学与工程学院,广东 潮州,521041
纸质出版日期:2017-8-5,
收稿日期:2016-12-28,
修回日期:2017-3-11,
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王岩, 林圳旭, 宋捷等. Eu掺杂SiC<sub><em>x</em></sub>O<sub><em>y</em></sub>薄膜的Eu<sup>3+</sup>发光机制[J]. 发光学报, 2017,38(8): 1010-1014
WANG Yan, LIN Zhen-xu, SONG Jie etc. Excitation Mechanism of Eu<sup>3+</sup> Photoluminescence from Eu Doped Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(8): 1010-1014
王岩, 林圳旭, 宋捷等. Eu掺杂SiC<sub><em>x</em></sub>O<sub><em>y</em></sub>薄膜的Eu<sup>3+</sup>发光机制[J]. 发光学报, 2017,38(8): 1010-1014 DOI: 10.3788/fgxb20173808.1010.
WANG Yan, LIN Zhen-xu, SONG Jie etc. Excitation Mechanism of Eu<sup>3+</sup> Photoluminescence from Eu Doped Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(8): 1010-1014 DOI: 10.3788/fgxb20173808.1010.
利用磁控溅射技术在低温250℃下制备Eu掺杂SiC
x
O
y
薄膜,研究薄膜的Eu
3+
发光激发机制。实验结果表明,薄膜的发光谱由来自基体材料的蓝光和来自Eu
3+
的红光组成;随着薄膜中Eu含量由0.19%增加到2.27%,其红光强度增加3倍左右,而蓝光逐渐减弱。Raman光谱及荧光瞬态谱分析表明,其蓝光由中立氧空位缺陷发光中心引起。结合薄膜的Eu
3+
激发光谱分析,SiC
x
O
y
:Eu薄膜的红光增强源于薄膜中Eu
3+
离子浓度的增加和/或基体材料的中立氧空位缺陷发光中心与Eu
3+
离子的能量转移。
Eu doped silicon oxycarbide (SiC
x
O
y
:Eu) films were fabricated by magnetron sputtering at a low temperature of 250℃. The excitation mechanism of Eu
3+
photoluminescence (PL) from SiC
x
O
y
:Eu was investigated. The spectra of all the SiC
x
O
y
:Eu films contain two PL bands:the blue band originated from the host matrix and Eu
3+
red PL band. With the increasing of the content of Eu from 0.19% to 2.27%
the red PL intensity is enhanced more than three times
while the blue PL intensity gradually decreases. The analysis results of Rama spectra and time-resolved PL show that the blue PL mainly originates from neutral oxygen vacancy (NOV) defect centers in the SiC
x
O
y
matrix. Combining with the PLE results
the enhanced red light emission is suggested from the increased concentration of Eu
3+
ions and/or the energy transfer between the NOV defect centers and optically active Eu
3+
ions.
光致发光铕掺杂碳氧化硅能量转移
photoluminescenceeuropium dopantsilicon oxycarbideenergy transfer
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