量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响

吕全江; 莫春兰; 张建立; 吴小明; 刘军林; 江风益

doi:10.3788/fgxb20173807.0923

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量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响
- Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED
- 发光学报 2017年38卷第7期页码：923-929
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
  
  国家重点研发计划重点专项（2016YFB0400600，2016YFB0400601）();国家自然科学基金重点项目（61334001）();国家自然科学青年基金（21
- DOI：10.3788/fgxb20173807.0923
  中图分类号： O484.4;TN383+.1
- 纸质出版日期：2017-7-5，
  
  收稿日期：2016-12-21，
  
  修回日期：2017-1-22，
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吕全江, 莫春兰, 张建立等. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017,38(7): 923-929

LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li etc. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017,38(7): 923-929
吕全江, 莫春兰, 张建立等. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017,38(7): 923-929 DOI： 10.3788/fgxb20173807.0923.

LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li etc. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017,38(7): 923-929 DOI： 10.3788/fgxb20173807.0923.

摘要

使用MOCVD在图形化Si衬底上生长了含V形坑的InGaN/GaN蓝光LED。通过改变生长温度，生长了禁带宽度稍大的载流子限制阱和禁带宽度稍小的发光阱，研究了两类量子阱组合对含V形坑InGaN/GaN基蓝光LED效率衰减的影响。使用高分辨率X射线衍射仪和LED电致发光测试系统对LED外延结构和LED光电性能进行了表征。结果表明：限制阱靠近n层、发光阱靠近p层的新型量子阱结构，在室温75 A/cm

时的外量子效率相对于其最高点仅衰减12.7%，明显优于其他量子阱结构的16.3%、16.0%、28.4%效率衰减，且只有这种结构在低温时（

150 K）未出现内量子效率随电流增大而剧烈衰减的现象。结果表明，合理的量子阱结构设计能够显著提高电子空穴在含V形坑量子阱中的有效交叠，促进载流子在阱间交互，提高载流子匹配度，抑制电子泄漏，从而减缓效率衰减、提升器件光电性能。

Abstract

V-pits-containing InGaN/GaN blue LEDs were grown on patterned Si substrate by metal-organic chemical vapor deposition (MOCVD). A carrier confinement quantum well(QW)with a larger band gap and a light-emitting QW with a slightly smaller band gap were grown by tuning growth temperature. The effect of QW structure on the efficiency droop performance of V-pits-containing InGaN/GaN blue LED was investigated with some means to mix the two different types of QW. LED epitaxial wafers and LED photoelectric properties were characterized by high-resolution X-ray diffraction and LED test system. For the novel quantum well structure in which the confinement QW close to the n-side and the light-emitting QW close to the p-side

the droop of the external quantum efficiency is only 12.7%

which shows a more significant improvement compared with other QW structures (16.3%

16.0%

28.4%). What's more

only for this kind of structure

the internal quantum efficiency does not decrease sharply with the increasing of drive current at low temperature(

150 K). The results show that a reasonable design of QW structure can significantly improve the effective overlap of electron-hole pairs in V-pits-containing InGaN/GaN QWs

promote carriers interaction between wells

and then improve carriers matching degree

inhibit electron leakage

retard efficiency droop

and finally enhance the photoelectric properties of devices.

关键词

硅衬底InGaN/GaN蓝光LED效率衰减V形坑量子阱结构

Keywords

Si substrateInGaN/GaN blue LEDefficiency droopV-shaped pitsquantum well structure

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