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南昌大学 国家硅基LED工程技术研究中心,江西 南昌,330047
纸质出版日期:2017-7-5,
收稿日期:2016-12-21,
修回日期:2017-1-22,
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吕全江, 莫春兰, 张建立等. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017,38(7): 923-929
LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li etc. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017,38(7): 923-929
吕全江, 莫春兰, 张建立等. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017,38(7): 923-929 DOI: 10.3788/fgxb20173807.0923.
LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li etc. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017,38(7): 923-929 DOI: 10.3788/fgxb20173807.0923.
使用MOCVD在图形化Si衬底上生长了含V形坑的InGaN/GaN蓝光LED。通过改变生长温度,生长了禁带宽度稍大的载流子限制阱和禁带宽度稍小的发光阱,研究了两类量子阱组合对含V形坑InGaN/GaN基蓝光LED效率衰减的影响。使用高分辨率X射线衍射仪和LED电致发光测试系统对LED外延结构和LED光电性能进行了表征。结果表明:限制阱靠近n层、发光阱靠近p层的新型量子阱结构,在室温75 A/cm
2
时的外量子效率相对于其最高点仅衰减12.7%,明显优于其他量子阱结构的16.3%、16.0%、28.4%效率衰减,且只有这种结构在低温时(
T
150 K)未出现内量子效率随电流增大而剧烈衰减的现象。结果表明,合理的量子阱结构设计能够显著提高电子空穴在含V形坑量子阱中的有效交叠,促进载流子在阱间交互,提高载流子匹配度,抑制电子泄漏,从而减缓效率衰减、提升器件光电性能。
V-pits-containing InGaN/GaN blue LEDs were grown on patterned Si substrate by metal-organic chemical vapor deposition (MOCVD). A carrier confinement quantum well(QW)with a larger band gap and a light-emitting QW with a slightly smaller band gap were grown by tuning growth temperature. The effect of QW structure on the efficiency droop performance of V-pits-containing InGaN/GaN blue LED was investigated with some means to mix the two different types of QW. LED epitaxial wafers and LED photoelectric properties were characterized by high-resolution X-ray diffraction and LED test system. For the novel quantum well structure in which the confinement QW close to the n-side and the light-emitting QW close to the p-side
the droop of the external quantum efficiency is only 12.7%
which shows a more significant improvement compared with other QW structures (16.3%
16.0%
28.4%). What's more
only for this kind of structure
the internal quantum efficiency does not decrease sharply with the increasing of drive current at low temperature(
T
150 K). The results show that a reasonable design of QW structure can significantly improve the effective overlap of electron-hole pairs in V-pits-containing InGaN/GaN QWs
promote carriers interaction between wells
and then improve carriers matching degree
inhibit electron leakage
retard efficiency droop
and finally enhance the photoelectric properties of devices.
硅衬底InGaN/GaN蓝光LED效率衰减V形坑量子阱结构
Si substrateInGaN/GaN blue LEDefficiency droopV-shaped pitsquantum well structure
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