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长春理工大学 高功率半导体激光国家重点实验室,吉林 长春,130022
纸质出版日期:2017-7-5,
收稿日期:2016-12-15,
修回日期:2017-2-4,
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张晓磊, 薄报学, 张哲铭等. C-mount封装激光器热特性分析与热沉结构优化研究[J]. 发光学报, 2017,38(7): 891-896
ZHANG Xiao-lei, BO Bao-xue, ZHANG Zhe-ming etc. Thermal Characteristics Analysis of C-mount Sink Package Laser and Optimization of Heat Sink Structure[J]. Chinese Journal of Luminescence, 2017,38(7): 891-896
张晓磊, 薄报学, 张哲铭等. C-mount封装激光器热特性分析与热沉结构优化研究[J]. 发光学报, 2017,38(7): 891-896 DOI: 10.3788/fgxb20173807.0891.
ZHANG Xiao-lei, BO Bao-xue, ZHANG Zhe-ming etc. Thermal Characteristics Analysis of C-mount Sink Package Laser and Optimization of Heat Sink Structure[J]. Chinese Journal of Luminescence, 2017,38(7): 891-896 DOI: 10.3788/fgxb20173807.0891.
为了降低单管半导体激光器的结温、提高器件的散热效果,基于C-mount热沉的热特性分析提出了一种优化的台阶热沉结构,研究了单管激光器结温和腔面侧向温度分布曲线的影响。在热沉温度298 K和连续输出功率10 W的条件下,腔长为1.5 mm的典型C-mount封装结构激光器的结温为343.6 K,热阻为4.6 K/W。通过在典型C-mount热沉中引入台阶结构,使封装激光器的结温降低为333.8 K,热阻减小到3.5 K/W。计算表明,其输出功率可提高近20%。
In order to reduce single-tube laser diode junction temperature and improve heat dissipation effects of the device
an optimized step sink structure was come up based on the thermal characteristic analysis of C-mount heat sink. The distribution of junction temperature and the lateral temperature of single-tube lasers were investigated. Under the conditions of the heat sink temperature of 298 K and continuous output power of 10 W
the junction temperature of typical C-mount heat sink package structure with 1.5 mm cavity length and 3 m solder thickness is 343.6 K
and the thermal resistance is 4.6 K/W. By introducing level heat sink structure
the junction temperature of single-tube laser diode is 333.8 K and thermal resistance is 3.5 K/W. Theoretical calculation shows that the output power can be improved nearly 20%.
焊料厚度热阻结温热沉输出功率
solder thicknessthermal resistancejunction temperatureheat sinkoutput power
OU F, LI X Y, LIU B Y, et al.. Enhanced radiation-loss-based radial-waveguide-coupled electrically pumped microresonator lasers with single-directional output[J]. Opt. Lett., 2010, 35(10):1722-1724.
海一娜, 邹永刚, 田锟, 等. 水平腔面发射半导体激光器研究进展[J]. 中国光学, 2017, 10(2):194-206. HAI Y N, ZOU Y G, TIAN K, et al.. Research progress of horizontal cavity surface emitting semiconductor lasers[J]. Chin. Opt., 2017, 10(2):194-206. (in Chinese)
黄晶, 胡秀寒, 陈卫标. LD抽运1 kHz电光调Q 946 nm Nd:YAG激光器[J]. 中国激光, 2015, 42(6):0602008-1-6. HUANG J, HU X H, CHEN W B. LD-pumped electro-optically Q-switched 946 nm Nd:YAG laser with pulse repetition rates of 1 kHz[J]. Chin. J. Lasers, 2015, 42(6):0602008-1-6. (in Chinese)
田锟, 邹永刚, 马晓辉, 等. 面发射分布反馈半导体激光器[J]. 中国光学, 2016, 9(1):51-64. TIAN K, ZOU Y G, MA X H, et al.. Surface emitting distributed feedback semiconductor lasers[J]. Chin. Opt., 2016, 9(1):51-64. (in Chinese)
潘碧玮, 余力强, 陆丹, 等. 20 kHz窄线宽光纤光栅外腔半导体激光器[J]. 中国激光, 2015, 42(5):0502007-1-5. PAN B W, YU L Q, LU D, et al.. 20 kHz narrow linewidth fiber Bragg grating external cavity semiconductor laser[J]. Chin. J. Lasers, 2015, 42(5):0502007-1-5. (in Chinese)
方金祥, 董世运, 徐滨士, 等. 考虑固态相变的激光熔覆成形应力场有限元分析[J]. 中国激光, 2015, 42(5):0502009-1-8. FANG J X, DONG S Y, XU B S, et al.. Study of stresses of laser metal deposition using FEM considering phase transformation effects[J]. Chin. J. Lasers, 2015, 42(5):0502009-1-8. (in Chinese)
LIU X Y, MA H, YU D Q, et al.. Optimal design analysis for thermal performance of high power 2.5D package[J]. J. Semicond., 2016, 37(7):035006-1-5.
倪羽茜, 井红旗, 孔金霞, 等. 高功率半导体激光器陶瓷封装散热性能研究[J]. 发光学报, 2016, 37(5):562-566. NI Y X, JING H Q, KONG J X, et al.. Thermal performance of high-power semiconductor laser packaged by ceramic submount[J]. Chin. J. Lumin., 2016, 37(5):562-566. (in Chinese)
ERBERT G, BRWOLFF A, SEBASTIAN J, et al.. High-power broad-area diode lasers and laser bars[M]. DIEHL R. High-Power Diode Lasers. Berlin Heidelberg:Springer, 2000:173-223.
马祥柱, 霍晋, 曲轶, 等. C-mount封装不同激光器芯片尺寸的热阻分析[J]. 发光学报, 2011, 32(2):184-187. MA X Z, HUO J, QU Y, et al.. Thermal-resistor analysis of the laser chips with different size in C-mount package[J]. Chin. J. Lumin., 2011, 32(2):184-187. (in Chinese)
JING H Q, ZHONG L, NI Y X, et al.. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J]. J. Semicond., 2015, 36(10):102006-1-6.
LIU Y, LEUNG S Y Y, WONG C K Y, et al.. Thermal simulation of flexible LED package enhanced with copper pillars[J]. J. Semicond., 2015, 36(6):064011-1-4.
王胜楠, 薄报学, 许留洋, 等. 基于腔面非注入区的半导体激光器的热特性分析[J]. 发光学报, 2014, 35(8):969-973. WANG S N, BO B X, XU L Y, et al.. Thermal analysis on semiconductor laser with non-injection region[J]. Chin. J. Lumin., 2014, 35(8):969-973. (in Chinese)
吴启保, 青双桂, 熊陶, 等. 大功率LED器件封装材料的研究现状[J]. 化工技术与开发, 2009, 38(2):15-17. WU Q B, QING S G, XIONG T, et al.. Current situation of high-power LED encapsulant[J]. Technol. Dev. Chem. Ind., 2009, 38(2):15-17. (in Chinese)
TIOTSOP M, FOTUE A J, KENFACK S C, et al.. Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot[J]. J. Semicond., 2015, 36(10):102001-1-7.
王淑娜, 张普, 熊玲玲, 等. 温度对高功率半导体激光器阵列"smile"的影响[J]. 光子学报, 2016, 45(5):0514001. WANG S N, ZHANG P, XIONG L L, et al.. Influence of temperature on "smile" in high power diode laser bars[J]. Acta Photon. Sinica, 2016, 45(5):0514001. (in Chinese)
MONT F W, KIM J K, SCHUBERT M F, et al.. High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes[J]. J. Appl. Phys., 2008, 103(8):083120-1-6.
李贺, 梁静秋, 梁中翥, 等. AlGaInP材料LED微阵列热学特性分析[J]. 光学学报, 2016, 36(1):0123001-1-8. LI H, LIANG J Q, LIANG Z Z, et al.. Thermal analysis of AlGaInP-based LED microarray[J]. Acta Opt. Sinica, 2016, 36(1):0123001-1-8. (in Chinese)
TABEI E, YAMAMOTO A. Curable silicone resin composition:U.S. US7291691B2[P]. 2007-11-06.
王文, 高欣, 周泽鹏, 等. 百瓦级多芯片半导体激光器稳态热分析[J]. 红外与激光工程, 2014, 43(5):1438-1443. WANG W, GAO X, ZHOU Z P, et al.. Steady-state thermal analysis of hundred-watt semiconductor laser with multichip-packaging[J]. Infrared Laser Eng., 2014, 43(5):1438-1443. (in Chinese)
井红旗, 仲莉, 倪羽茜, 等. 高功率密度激光二极管叠层散热结构的热分析[J]. 发光学报, 2016, 37(1):81-87. JING H Q, ZHONG L, NI Y X, et al.. Thermal analysis of high power density laser diode stack cooling structure[J]. Chin. J. Lumin., 2016, 37(1):81-87. (in Chinese)
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