基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现

荀明珠; 李豫东; 郭旗; 何承发; 于新; 于钢; 文林; 张兴尧

doi:10.3788/fgxb20173806.0828

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基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现

发光学应用及交叉前沿 | 更新时间：2020-08-12

- 基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现
- Design of Wafer Level Device Irradiation and The Parameters Extraction Equipment Based on X-ray Irradiation
- 发光学报 2017年38卷第6期页码：828-834
- 作者机构：
  
  中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 中国科学院新疆理化技术研究所, 新疆乌鲁木齐 830011
- 作者简介：
- 基金信息：
  
  中国科学院西部之光重点项目（ZD201301）();国家自然科学基金（11675259）资助项目()
- DOI：10.3788/fgxb20173806.0828
  中图分类号： TP394.1;TH691.9
- 纸质出版日期：2017-6-5，
  
  收稿日期：2016-11-1，
  
  修回日期：2017-1-2，
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荀明珠, 李豫东, 郭旗等. 基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现[J]. 发光学报, 2017,38(6): 828-834

XUN Ming-zhu, LI Yu-dong, GUO Qi etc. Design of Wafer Level Device Irradiation and The Parameters Extraction Equipment Based on X-ray Irradiation[J]. Chinese Journal of Luminescence, 2017,38(6): 828-834
荀明珠, 李豫东, 郭旗等. 基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现[J]. 发光学报, 2017,38(6): 828-834 DOI： 10.3788/fgxb20173806.0828.

XUN Ming-zhu, LI Yu-dong, GUO Qi etc. Design of Wafer Level Device Irradiation and The Parameters Extraction Equipment Based on X-ray Irradiation[J]. Chinese Journal of Luminescence, 2017,38(6): 828-834 DOI： 10.3788/fgxb20173806.0828.

摘要

基于标准工艺线的设计加固是大规模集成电路抗辐射加固的发展趋势，对微纳米单元器件进行辐射效应参数提取是实现设计加固的前提。为了摒除参数提取过程中封装引入的影响，实现在线参数测试，本文设计了一套晶圆级器件辐照与辐射效应参数提取试验装置，兼备晶圆级器件电离总剂量辐照、器件参数在线测试分析功能，并且具有通用性强、测量范围宽、结构一体化、操作自动化等特点。对设备在50 kV管压下产生的X射线能谱、剂量率、束斑的测量以及对晶圆级MOS器件进行I-

、

C-V

、低频噪声特性的测试分析结果表明，该设备符合ASTM F1467测试标准，且能满足晶圆级器件辐射效应参数提取要求，可为大规模集成电路抗辐射设计加固提供良好的试验条件。

Abstract

The design of radiation hardening large scale integrated circuit based on the standard process is the development tendency in the future. Extracting the radiation effect parameters of the nano device is the foundation of improvement of the radiation hardening. In order to eliminate the influence introduced by encapsulation in the parameter extraction process

a set of equipment for irradiation parameters extraction of wafer level device was designed

which could realize the function of online X-ray irradiation and online parameter test and analysis with the advantage of strong commonality

wide measuring range. The X-ray energy spectra

dose rate

beam uniformity were measured with the tube voltage of 50 kV

as well as I-

C-V

and low frequency noise characteristics of the wafer level MOS device were test and analysis. The experiment results show that the equipment can satisfy the standard of ASTM F1467 test

and meet the requirements of the radiation effect parameters extraction of the wafer level device. The equipment can provide a good test condition for the design of radiation hardening large scale integrated circuit.

关键词

抗辐射加固试验装置晶圆级器件X射线辐照辐射效应参数提取

Keywords

radiation hardeningexperiment equipmentwafer level device irradiationX-ray irradiationradiation effectparameters extraction

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