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武汉大学 动力与机械学院,湖北 武汉,430072
纸质出版日期:2017-6-5,
收稿日期:2016-12-5,
修回日期:2017-2-3,
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刘梦玲, 高艺霖, 胡红坡等. 插指型SiO<sub>2</sub>电流阻挡层对大功率LED外量子效率的影响[J]. 发光学报, 2017,38(6): 786-792
LIU Meng-ling, GAO Yi-lin, HU Hong-po etc. Effect of Interdigitated SiO<sub>2</sub> Current Blocking Layer on External Quantum Efficiency of High Power LEDs[J]. Chinese Journal of Luminescence, 2017,38(6): 786-792
刘梦玲, 高艺霖, 胡红坡等. 插指型SiO<sub>2</sub>电流阻挡层对大功率LED外量子效率的影响[J]. 发光学报, 2017,38(6): 786-792 DOI: 10.3788/fgxb20173806.0786.
LIU Meng-ling, GAO Yi-lin, HU Hong-po etc. Effect of Interdigitated SiO<sub>2</sub> Current Blocking Layer on External Quantum Efficiency of High Power LEDs[J]. Chinese Journal of Luminescence, 2017,38(6): 786-792 DOI: 10.3788/fgxb20173806.0786.
为了改善蓝光大功率LED芯片p电极处的电流拥挤现象,提高大功率LED芯片的外量子效率,在ITO透明导电层与p-GaN间沉积插指型SiO
2
电流阻挡层。采用等离子体增强化学气相沉积的方法沉积SiO
2
薄膜,再经过光刻和BOE湿法刻蚀技术制备插指型SiO
2
电流阻挡层。采用SimuLED仿真软件分析插指型SiO
2
电流阻挡层对大功率LED芯片电流扩展性能的影响,研究插指型SiO
2
电流阻挡层对大功率LED芯片外量子效率的影响。结果发现,插指型SiO
2
电流阻挡层结构可以有效改善p电极附近的电流拥挤现象。与没有沉积插指型SiO
2
电流阻挡层的大功率LED芯片相比,光输出功率得到显著的提高。在350 mA的输入电流下,沉积插指型SiO
2
电流阻挡层后的大功率LED芯片的外量子效率提高了18.7%。
In order to alleviate current crowding around p-electrode of high power blue light-emitting diodes (LEDs) and improve its external quantum efficiency (EQE)
a SiO
2
current blocking layer (CBL) was deposited between ITO transparent conductive layer and p-GaN by plasma enhanced chemical vapor deposition (PECVD). An interdigitated SiO
2
CBL pattern was then fabricated by photolithography and BOE wet etching process. The effect of interdigitated SiO
2
CBL on the current spreading performance of high power LED was analyzed using commercial SimuLED package. It is found that the current crowding around the p-electrode is effectively alleviated by employing the interdigitated SiO
2
CBL. Comparing with the high power LED without interdigitated SiO
2
CBL
the light output power is significantly improved. At 350 mA injection current
the external quantum efficiency of the high power LED with interdigitated SiO
2
CBL is 18.7% higher than that of LED without interdigitated SiO
2
CBL.
大功率LED插指型SiO2电流阻挡层电流拥挤外量子效率
high power LEDinterdigitated SiO2 CBLcurrent crowdingexternal quantum efficiency
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