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吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室,吉林 长春,130012
纸质出版日期:2017-6-5,
收稿日期:2017-1-3,
修回日期:2017-2-19,
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刘明哲, 李鹏翀, 邓高强等. 6H-SiC衬底上AlGaN基垂直结构紫外LED的制备[J]. 发光学报, 2017,38(6): 753-759
LIU Ming-zhe, LI Peng-chong, DENG Gao-qiang etc. Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate[J]. Chinese Journal of Luminescence, 2017,38(6): 753-759
刘明哲, 李鹏翀, 邓高强等. 6H-SiC衬底上AlGaN基垂直结构紫外LED的制备[J]. 发光学报, 2017,38(6): 753-759 DOI: 10.3788/fgxb20173806.0753.
LIU Ming-zhe, LI Peng-chong, DENG Gao-qiang etc. Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate[J]. Chinese Journal of Luminescence, 2017,38(6): 753-759 DOI: 10.3788/fgxb20173806.0753.
利用金属有机物化学气相沉积方法,在n型6H-SiC衬底上制备了15对Si掺杂Al
0.19
Ga
0.81
N/Al
0.37
Ga
0.63
N DBR,并采用低温AlN缓冲层有效抑制了DBR结构中裂纹的产生,得到了表面均方根粗糙度仅为0.4 nm且导电性能良好的n型DBR,其在369 nm处峰值反射率为68%,阻带宽度为10 nm。在获得导电DBR的基础上,进一步在n型6H-SiC衬底上构建了有、无DBR的垂直结构紫外LED。对比两者电致发光光谱,发现DBR结构的引入有效增强了LED紫外发光强度。
Silicon-doped Al
0.19
Ga
0.81
N/Al
0.37
Ga
0.63
N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition(MOCVD). To suppress the generation of cracks
a low-temperature AlN pre-deposition layer on 6H-SiC(0001) substrate was used as buffer. A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained. The stop-band bandwidth and RMS value of DBR are 10 nm and 0.4 nm
respectively. Furthermore
the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated. By comparing EL spectra
it is shown that the introduction of DBR structure can effectively improve the UV emission.
AlGaN紫外发光二极管分布式布拉格反射镜金属有机物化学气相沉积垂直结构
AlGaNultraviolet LEDdistributed Bragg reflectorsmetal organic chemical vapor depositionvertical structure
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