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南昌大学 国家硅基LED工程技术研究中心, 江西 南昌 330047
纸质出版日期:2017-6-5,
收稿日期:2016-11-24,
修回日期:2017-1-18,
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聂晓辉, 王小兰, 莫春兰等. V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响[J]. 发光学报, 2017,38(6): 735-741
NIE Xiao-hui, WANG Xiao-lan, MO Chun-lan etc. Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2017,38(6): 735-741
聂晓辉, 王小兰, 莫春兰等. V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响[J]. 发光学报, 2017,38(6): 735-741 DOI: 10.3788/fgxb20173806.0735.
NIE Xiao-hui, WANG Xiao-lan, MO Chun-lan etc. Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2017,38(6): 735-741 DOI: 10.3788/fgxb20173806.0735.
使用MOCVD在图形化Si衬底上生长了InGaN/AlGaN近紫外LED,通过改变低温GaN插入层的厚度调控V形坑尺寸,系统地研究了V形坑尺寸对InGaN/AlGaN近紫外LED(395 nm)光电性能的影响。结果表明,低温GaN插入层促进了V形坑的形成,并且V形坑尺寸随着插入层厚度的增加而增大。在电学性能方面,随着V形坑尺寸的增大,-5 V下的漏电流从5.210
-4
A增加至6.510
2
A;350 mA下正向电压先从3.55 V降至3.44 V,然后升高至3.60 V。在光学性能方面,随着V形坑尺寸的增大,35 A/cm
2
下的归一化外量子效率先从0.07提高至最大值1,然后衰退至0.53。对V形坑尺寸影响InGaN/AlGaN近紫外LED光电性能的物理机理进行了分析,结果表明:InGaN/AlGaN近紫外LED的光电性能与V形坑尺寸密切相关,最佳的V形坑尺寸为120~190 nm,尺寸太大或者太小都会降低器件性能。
InGaN/AlGaN near-ultraviolet light emitting diode (near-UV LED) were grown on patterned Si substrate by metal-organic chemical vapor deposition (MOCVD). The effects of V-pit size on optical and electrical properties of InGaN/AlGaN near-UV LED (395 nm) were investigated systematically by manipulating the thickness of low temperature GaN interlayer to change the V-pit size. The results show that the low temperature GaN interlayer can enhance the formation of V-pit
and the V-pit size increases with the increasing of the thickness of low temperature GaN interlayer. In terms of electrical properties
with the increasing of the V-pit size
the leakage current at -5 V increases from 5.210
-4
A to 6.510
2
A
and the forward voltage at 350 mA decreases from 3.55 V to 3.44 V initially and then increases to 3.60 V. In terms of optical properties
with the increasing of the V-pit size
the normalized external quantum efficiency (EQE) at 35 A/cm
2
increases from 0.07 to the maximum of 1 initially and then decreases to 0.53. The mechanism of the effects of V-pit size on optical and electrical properties of InGaN/AlGaN near-UV LED were analyzed. The analyzing results show that the optical and electrical properties of InGaN/AlGaN near-UV LED are closely related to V-pit size. The optimized V-pit size is approximately 120-190 nm
too large or too small will deteriorate the properties of devices seriously.
硅衬底近紫外LED低温GaN插入层V形坑尺寸光电性能
Si substratenear-UV LEDlow temperature GaN interlayerV-pit sizeoptical and electrical properties
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