V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响

聂晓辉; 王小兰; 莫春兰; 张建立; 潘拴; 刘军林

doi:10.3788/fgxb20173806.0735

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V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响
- Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode
- 发光学报 2017年38卷第6期页码：735-741
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心, 江西南昌 330047
- 作者简介：
- 基金信息：
  
  国家自然科学基金青年基金（21405076）资助项目()
- DOI：10.3788/fgxb20173806.0735
  中图分类号： O484.4;TN383+.1
- 纸质出版日期：2017-6-5，
  
  收稿日期：2016-11-24，
  
  修回日期：2017-1-18，
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聂晓辉, 王小兰, 莫春兰等. V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响[J]. 发光学报, 2017,38(6): 735-741

NIE Xiao-hui, WANG Xiao-lan, MO Chun-lan etc. Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2017,38(6): 735-741
聂晓辉, 王小兰, 莫春兰等. V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响[J]. 发光学报, 2017,38(6): 735-741 DOI： 10.3788/fgxb20173806.0735.

NIE Xiao-hui, WANG Xiao-lan, MO Chun-lan etc. Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2017,38(6): 735-741 DOI： 10.3788/fgxb20173806.0735.

摘要

使用MOCVD在图形化Si衬底上生长了InGaN/AlGaN近紫外LED，通过改变低温GaN插入层的厚度调控V形坑尺寸，系统地研究了V形坑尺寸对InGaN/AlGaN近紫外LED（395 nm）光电性能的影响。结果表明，低温GaN插入层促进了V形坑的形成，并且V形坑尺寸随着插入层厚度的增加而增大。在电学性能方面，随着V形坑尺寸的增大，－5 V下的漏电流从5.210

-4

A增加至6.510

A；350 mA下正向电压先从3.55 V降至3.44 V，然后升高至3.60 V。在光学性能方面，随着V形坑尺寸的增大，35 A/cm

下的归一化外量子效率先从0.07提高至最大值1，然后衰退至0.53。对V形坑尺寸影响InGaN/AlGaN近紫外LED光电性能的物理机理进行了分析，结果表明：InGaN/AlGaN近紫外LED的光电性能与V形坑尺寸密切相关，最佳的V形坑尺寸为120~190 nm，尺寸太大或者太小都会降低器件性能。

Abstract

InGaN/AlGaN near-ultraviolet light emitting diode (near-UV LED) were grown on patterned Si substrate by metal-organic chemical vapor deposition (MOCVD). The effects of V-pit size on optical and electrical properties of InGaN/AlGaN near-UV LED (395 nm) were investigated systematically by manipulating the thickness of low temperature GaN interlayer to change the V-pit size. The results show that the low temperature GaN interlayer can enhance the formation of V-pit

and the V-pit size increases with the increasing of the thickness of low temperature GaN interlayer. In terms of electrical properties

with the increasing of the V-pit size

the leakage current at -5 V increases from 5.210

-4

A to 6.510

and the forward voltage at 350 mA decreases from 3.55 V to 3.44 V initially and then increases to 3.60 V. In terms of optical properties

with the increasing of the V-pit size

the normalized external quantum efficiency (EQE) at 35 A/cm

increases from 0.07 to the maximum of 1 initially and then decreases to 0.53. The mechanism of the effects of V-pit size on optical and electrical properties of InGaN/AlGaN near-UV LED were analyzed. The analyzing results show that the optical and electrical properties of InGaN/AlGaN near-UV LED are closely related to V-pit size. The optimized V-pit size is approximately 120-190 nm

too large or too small will deteriorate the properties of devices seriously.

关键词

硅衬底近紫外LED低温GaN插入层V形坑尺寸光电性能

Keywords

Si substratenear-UV LEDlow temperature GaN interlayerV-pit sizeoptical and electrical properties

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