浏览全部资源
扫码关注微信
武汉科技大学汽车与交通工程学院, 湖北 武汉 430081
纸质出版日期:2017-5-5,
收稿日期:2016-12-15,
修回日期:2017-2-24,
扫 描 看 全 文
陈华, 李静, 周兴林等. 封装热应力致半导体激光器“Smile”效应的抑制方法[J]. 发光学报, 2017,38(5): 655-661
CHEN Hua, LI Jing, ZHOU Xing-lin etc. Measures to Reduce Smile Effect of Semiconductor Laser Diode Arrays Caused by Packaging Thermal Stress[J]. Chinese Journal of Luminescence, 2017,38(5): 655-661
陈华, 李静, 周兴林等. 封装热应力致半导体激光器“Smile”效应的抑制方法[J]. 发光学报, 2017,38(5): 655-661 DOI: 10.3788/fgxb20173805.0655.
CHEN Hua, LI Jing, ZHOU Xing-lin etc. Measures to Reduce Smile Effect of Semiconductor Laser Diode Arrays Caused by Packaging Thermal Stress[J]. Chinese Journal of Luminescence, 2017,38(5): 655-661 DOI: 10.3788/fgxb20173805.0655.
封装热应力所致smile效应是阵列封装大功率半导体激光器中普遍存在的问题。为解决这一问题,本文在研究smile效应产生机理的基础上,提出采用错温封装技术和热沉预应力封装技术降低smile效应的措施。以某808 nm水平阵列封装半导体激光器为例,采用仿真分析的办法研究了上述技术的可行性和有效性。仿真分析表明,采用传统封装技术,在恢复至室温22 ℃后,芯片smile值约为39.36 m,采用封装前升高芯片温度至429 ℃的错温封装技术,可以将smile值降至1.9 m;若采用热沉预应力技术,对热沉的两个端面沿长边方向分别施加190 N 的拉力,可以将smile值降至0.35 m。结果表明,这两种封装措施是有效的。错温封装技术和热沉预应力封装技术具有易于实现的优点,其中热沉预应力技术对于各种smile效应类型和不同的smile值都可以调整和修正。
The smile effect caused by thermal stress is a common problem in high power semiconductor laser array packaging. The mechanism of smile effect caused by packaging thermal stress was studied firstly. Then two measures
the differential temperature soldering technique and the prestressing force technique
were putted forward. The feasibility and effectiveness of the above mentioned techniques
were studied through the simulation method for an 808 nm semiconductor laser diode array. Using the traditional soldering technique
the smile effect is about 39.36 m at 22 ℃. Using the differential temperature soldering technique
increasing the chip's temperature to 429 ℃ before soldering can reduce the smile effect to 1.9 m. Using the prestressing force technique
applying a tensile force of 190 N along the long axis direction on each side of the heat sink can reduce the smile effect to 0.35 m. Both techniques are proved to be effective. The two techniques are easy to implement
and the prestressing force technique can be used to adjust or modify various smile effect types and different smile values.
半导体激光器smile效应热应力错温封装预应力
semiconductor laser diodesmile effectthermal effectdifferential temperature solderingprestressing force
LIU X SH, ZHAO W, XIONG L L, et al.. Packaging of High Power Semiconductor Lasers [M]. New York: Springer Science, 2015.
郎超, 尧舜, 陈丙振, 等. 半导体激光器阵列的"Smile"效应对光束质量的影响 [J]. 中国激光, 2012, 39(5):33-37. LANG C, YAO S, CHEN B Z, et al.. "Smile" effect on the beam quality for diode laser array [J]. Chin. J. Laser, 2012, 39(5):33-37. (in Chinese)
WETTER N U. Three-fold effective brightness increase of laser diode bar emission by assessment and correction of diode array curvature [J]. Opt. Laser Technol., 2001, 33(3):181-187.
王文知, 井红旗, 祁琼, 等. 大功率半导体激光器可靠性研究和失效分析 [J]. 发光学报, 2017, 38(2):165-169. WANG W Z, JING H Q, QI Q, et al.. Reliability test and failure analysis of high power semicounductor laser [J]. Chin. J. Lumin., 2017, 38(2):165-169. (in Chinese)
王淑娜, 张普, 熊玲玲, 等. 温度对高功率半导体激光器阵列"smile"的影响 [J]. 光子学报, 2016, 45(5):1-6. WANG S N, ZHANG P, XIONG L L, et al.. Influence of temperature on "Smile" in high power diode laser bars [J]. Acta Photon. Sinica, 2016, 45(5):1-6. (in Chinese)
贾冠男, 尧舜, 潘飞, 等. 探针扫描法快速测量半导体激光阵列Smile效应 [J]. 红外与激光工程, 2015, 44(12):3576-3579. JIA G N, YAO S, PAN F, et al.. Smile effect of laser diode arrays measured by stylus scan method [J]. Infrared Laser Eng., 2015, 44(12):3576-3579. (in Chinese)
王祥鹏, 李再金, 刘云, 等. 半导体激光器列阵的smile效应与封装技术 [J]. 光学 精密工程, 2010, 18(3):552-557. WANG X P, LI Z J, LIU Y, et al.. Smile effect and package technique for diode laser arrays [J]. Opt. Precision Eng., 2010, 18(3):552-557. (in Chinese)
王辉. 半导体激光器封装中热应力和变形的分析 [J]. 半导体技术, 2008, 33(8):718-720. WANG H. Thermal stress and deformation analysis of semiconductor lasers packaging [J]. Semicond. Technol., 2008, 33(8):718-720. (in Chinese)
潘飞, 尧舜, 贾冠男,等. 半导体激光阵列"Smile"效应下快轴准直镜的装调 [J]. 半导体光电, 2014, 35(1):35-38. PAN F, YAO S, JIA G N, et al.. "Smile" effect on fast axis collimator assembly for diode laser array [J]. Semicond. Optoelectron., 2014, 35(1):35-38. (in Chinese)
辛国锋,翟荣辉,陈高庭,等. 大功率半导体激光器阵列的封装技术 [J]. 激光与光电子学进展, 2005,42(8):54-57. XIN G F, ZHAI R H, CHEN G T, et al.. Packaging techniques of high power semiconductor laser array [J]. Laser Optron. Prog., 2005, 42(8):54-57. (in Chinese)
王永平. 用于半导体激光器封装的In焊料性能研究 [D]. 郑州: 郑州大学, 2013. WANG Y P. The Properties Researching of Indium Solder for Semiconductor Laser Package [D]. Zhengzhou: Zhengzhou University, 2013. (in Chinese)
王昭, 雷军, 谭昊, 等. 基于mini-bar的二极管激光器焊接实验研究 [J]. 强激光与粒子束, 2016, 28(8):9-12. WANG Z, LEI J, TAN H, et al.. Experimental investigation on diode laser bonding based on mini-bars [J]. High Power Laser Particle Beams, 2016, 28(8):9-12. (in Chinese)
王文, 高欣, 周泽鹏, 等. 百瓦级多芯片半导体激光器稳态热分析 [J]. 红外与激光工程, 2014, 43(5):1438-1443. WANG W, GAO X, ZHOU Z P, et al.. Steady-state thermal analysis of hundred-watt semiconductor laser with multichip-packaging [J]. Infrared Laser Eng., 2014, 43(5):1438-1443. (in Chinese)
倪羽茜, 井红旗, 孔金霞, 等. 高功率半导体激光器陶瓷封装散热性能研究 [J]. 发光学报, 2016, 37(5):561-566. NI Y X, JING H Q, KONG J X, et al.. Thermal performance of high-power semiconductor laser packaged by ceramic submount [J]. Chin. J. Lumin., 2016, 37(5):561-566. (in Chinese)
张勇, 杨瑞霞, 安振峰, 等. 4 mm腔长高功率单管半导体激光器封装应力的研究 [J]. 光谱学与光谱分析, 2014, 34(6):1441-1445. ZHANG Y, YANG R X, AN Z F, et al.. Study on packaging-induced stress in 4 mm cavity length high-power single emitter semiconductor laser [J]. Spectrosc. Spect. Anal., 2014, 34(6):1441-1445. (in Chinese)
王立军, 彭航宇, 张俊. 大功率半导体激光合束进展 [J]. 中国光学, 2015, 8(4):517-534. WANG L J, PENG H Y, ZHANG J. Advance on high power diode laser coupling [J]. Chin. Opt., 2015, 8(4):517-534. (in Chinese)
0
浏览量
66
下载量
2
CSCD
关联资源
相关文章
相关作者
相关机构