封装热应力致半导体激光器&ldquo;Smile&rdquo;效应的抑制方法

陈华; 李静; 周兴林; 吕悦晶

doi:10.3788/fgxb20173805.0655

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封装热应力致半导体激光器“Smile”效应的抑制方法

器件制备及器件物理 | 更新时间：2020-08-12

- 封装热应力致半导体激光器“Smile”效应的抑制方法
- Measures to Reduce Smile Effect of Semiconductor Laser Diode Arrays Caused by Packaging Thermal Stress
- 发光学报 2017年38卷第5期页码：655-661
- 作者机构：
  
  武汉科技大学汽车与交通工程学院, 湖北武汉 430081
- 作者简介：
- 基金信息：
  
  湖北省自然科学基金面上项目（2015CFB220）;湖北省科技支撑计划（2014BEC055）;国家自然科学基金面上项目（51578430）;武汉科技大学青年科技骨干培育计划资助项目
- DOI：10.3788/fgxb20173805.0655
  中图分类号： TN248.4
- 纸质出版日期：2017-5-5，
  
  收稿日期：2016-12-15，
  
  修回日期：2017-2-24，
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陈华, 李静, 周兴林等. 封装热应力致半导体激光器“Smile”效应的抑制方法[J]. 发光学报, 2017,38(5): 655-661

CHEN Hua, LI Jing, ZHOU Xing-lin etc. Measures to Reduce Smile Effect of Semiconductor Laser Diode Arrays Caused by Packaging Thermal Stress[J]. Chinese Journal of Luminescence, 2017,38(5): 655-661
陈华, 李静, 周兴林等. 封装热应力致半导体激光器“Smile”效应的抑制方法[J]. 发光学报, 2017,38(5): 655-661 DOI： 10.3788/fgxb20173805.0655.

CHEN Hua, LI Jing, ZHOU Xing-lin etc. Measures to Reduce Smile Effect of Semiconductor Laser Diode Arrays Caused by Packaging Thermal Stress[J]. Chinese Journal of Luminescence, 2017,38(5): 655-661 DOI： 10.3788/fgxb20173805.0655.

摘要

封装热应力所致smile效应是阵列封装大功率半导体激光器中普遍存在的问题。为解决这一问题，本文在研究smile效应产生机理的基础上，提出采用错温封装技术和热沉预应力封装技术降低smile效应的措施。以某808 nm水平阵列封装半导体激光器为例，采用仿真分析的办法研究了上述技术的可行性和有效性。仿真分析表明，采用传统封装技术，在恢复至室温22 ℃后，芯片smile值约为39.36 m，采用封装前升高芯片温度至429 ℃的错温封装技术，可以将smile值降至1.9 m；若采用热沉预应力技术，对热沉的两个端面沿长边方向分别施加190 N 的拉力，可以将smile值降至0.35 m。结果表明，这两种封装措施是有效的。错温封装技术和热沉预应力封装技术具有易于实现的优点，其中热沉预应力技术对于各种smile效应类型和不同的smile值都可以调整和修正。

Abstract

The smile effect caused by thermal stress is a common problem in high power semiconductor laser array packaging. The mechanism of smile effect caused by packaging thermal stress was studied firstly. Then two measures

the differential temperature soldering technique and the prestressing force technique

were putted forward. The feasibility and effectiveness of the above mentioned techniques

were studied through the simulation method for an 808 nm semiconductor laser diode array. Using the traditional soldering technique

the smile effect is about 39.36 m at 22 ℃. Using the differential temperature soldering technique

increasing the chip's temperature to 429 ℃ before soldering can reduce the smile effect to 1.9 m. Using the prestressing force technique

applying a tensile force of 190 N along the long axis direction on each side of the heat sink can reduce the smile effect to 0.35 m. Both techniques are proved to be effective. The two techniques are easy to implement

and the prestressing force technique can be used to adjust or modify various smile effect types and different smile values.

关键词

半导体激光器smile效应热应力错温封装预应力

Keywords

semiconductor laser diodesmile effectthermal effectdifferential temperature solderingprestressing force

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封装热应力致半导体激光器“Smile”效应的抑制方法

Measures to Reduce Smile Effect of Semiconductor Laser Diode Arrays Caused by Packaging Thermal Stress

DOI：10.3788/fgxb20173805.0655

摘要

Abstract

关键词

Keywords

references