基于MEH-PPV/Ir(ppy)3聚合物电双稳器件

王敏; 胡煜峰; 滕枫

doi:10.3788/fgxb20173805.0611

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基于MEH-PPV/Ir(ppy)₃聚合物电双稳器件

器件制备及器件物理 | 更新时间：2020-08-12

- 基于MEH-PPV/Ir(ppy)₃聚合物电双稳器件
- Electrical Bistable Devices Based on Poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene]/Tris(2-phenylpyridine)iridium(Ⅲ)
- 发光学报 2017年38卷第5期页码：611-616
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室, 北京 100044
- 作者简介：
- 基金信息：
  
  中央高校基本科研业务费专项资金（2014JBZ009）;国家自然科学基金（61475014，61377028，61475017）资助项目
- DOI：10.3788/fgxb20173805.0611
  中图分类号： O484.3
- 纸质出版日期：2017-5-5，
  
  收稿日期：2016-12-24，
  
  修回日期：2017-2-10，
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王敏, 胡煜峰, 滕枫. 基于MEH-PPV/Ir(ppy)3聚合物电双稳器件[J]. 发光学报, 2017,38(5): 611-616

WANG Min, HU Yu-feng, TENG Feng. Electrical Bistable Devices Based on Poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene]/Tris(2-phenylpyridine)iridium(Ⅲ)[J]. Chinese Journal of Luminescence, 2017,38(5): 611-616
王敏, 胡煜峰, 滕枫. 基于MEH-PPV/Ir(ppy)3聚合物电双稳器件[J]. 发光学报, 2017,38(5): 611-616 DOI： 10.3788/fgxb20173805.0611.

WANG Min, HU Yu-feng, TENG Feng. Electrical Bistable Devices Based on Poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene]/Tris(2-phenylpyridine)iridium(Ⅲ)[J]. Chinese Journal of Luminescence, 2017,38(5): 611-616 DOI： 10.3788/fgxb20173805.0611.

摘要

通过逐层旋涂的方法，利用MEH-PPV（Poly[2-methoxy-5-（2-ethylhexyloxy）-1，4-phenylenevinylene]与Ir（ppy）

（tris（2-phenylpyridine）iridium（Ⅲ））），制备活性层，实现了高性能的电双稳器件。通过改变MEH-PPV 的浓度，制备了不同器件并进行性能比较，发现所有器件都具有明显的电双稳特性。当MEH-PPV的浓度达到4 mg/mL时，器件的开关比可以达10

。同时，通过测试器件的电流-循环次数研究了器件的持续稳定特性。经过10

次的反复读写测试，器件性能依然稳定。最后，通过对器件的

I-V

曲线进行线性拟合，并结合器件的能级图，对器件的工作原理进行了研究。结果表明，MEH-PPV/Ir（ppy）

器件的电双稳特性产生的主要原因是偶极层的形成与破坏。

Abstract

The electrical bistable devices based on poly[2-methoxy-5-(2-ethylhexyloxy)-1

4-phenylenevinylene] (MEH-PPV)/tris(2-phenylpyridine)iridium(Ⅲ) films were fabricated by using the spin-coating method. The devices with different concentrations of MEH-PPV were studied. All the devices have the typical bistability. When the concentration of MEH-PPV is 4 mg/mL

the device has the electrical ON/OFF ratio of about 110

. In addition

the current-recycle measurements were taken to investigate the sustained stability performance of the device. The performance of the device remains stable after 10

recycles. The fitting of

I-V

characteristics was utilized to analyze the charge transport process with the help of the diagram of the energy bands of the device. The results show that the current transition process is attributed to the formation and damage of the interface dipole layer under different voltage biases.

关键词

MEH-PPVIr(PPY)3有机电双稳器件偶极层

Keywords

MEH-PPVIr(PPY)3organic bistable devicesinterface dipole

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