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吉林大学电子科学与工程学院, 吉林 长春 130012
纸质出版日期:2017-5-5,
收稿日期:2016-12-21,
修回日期:2017-1-19,
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马征征, 董鑫, 庄仕伟等. 退火对Ga<sub>2</sub>O<sub>3</sub>薄膜特性的影响[J]. 发光学报, 2017,38(5): 606-610
MA Zheng-zheng, DONG Xin, ZHUANG Shi-wei etc. Effect of Annealing on Ga<sub>2</sub>O<sub>3</sub> Film[J]. Chinese Journal of Luminescence, 2017,38(5): 606-610
马征征, 董鑫, 庄仕伟等. 退火对Ga<sub>2</sub>O<sub>3</sub>薄膜特性的影响[J]. 发光学报, 2017,38(5): 606-610 DOI: 10.3788/fgxb20173805.0606.
MA Zheng-zheng, DONG Xin, ZHUANG Shi-wei etc. Effect of Annealing on Ga<sub>2</sub>O<sub>3</sub> Film[J]. Chinese Journal of Luminescence, 2017,38(5): 606-610 DOI: 10.3788/fgxb20173805.0606.
采用金属有机物化学气相沉积法在
c
面蓝宝石衬底上生长了高质量的-Ga
2
O
3
薄膜,并将样品分别在真空、氧气、氮气氛围下退火30 min,研究了各类退火工艺对Ga
2
O
3
薄膜特性的影响,对退火所得的薄膜进行了X射线衍射、光致发光谱、紫外透射谱和原子力显微镜扫描的研究。结果表明,各类退火工艺均能够优化薄膜的晶体质量和表面形貌,同时有效改善了薄膜的光学性质。其中,氧气退火后的样品在可见光波段透射率高达83%,且吸收边更加陡峭;表面粗糙度降至0.564 nm,其表面更为平整。这些结果说明氧气退火对晶体质量的提高最为显著。氮气、真空退火的样品在光致发光谱中出现365 nm的发光峰,这是大量氧空位的存在导致的。
High-quality Ga
2
O
3
films were grown on the
c
-plane sapphire substrates by metal organic chemical vapor deposition and annealed in the different atmospheres consisting of vacuum
oxygen
nitrogen for 30 min
respectively. The effects of annealing on crystal structure and optical properties of -Ga
2
O
3
film were researched. The results show that all anneal methods can optimize the crystal structure and optical properties of -Ga
2
O
3
films. Especially
the transmittance and surface roughness of the film annealed in the oxygen reaches 83% and 0.564 nm separately compared with other annealed films
and its absorbtion edge gets sharper. It reveals that the oxygen anneal has more important effect on the improvement of the crystal quality. The films annealed in nitrogen and vacuum both exhibit an clear emission peak at 365 nm in the PL spectra.
氧化镓退火蓝宝石衬底金属有机物化学气相沉积法
gallium oxideannealsapphire substratemetal organic chemical vapor deposition(MOCVD)
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