电泳沉积法制备的Zn1-xCxO薄膜的结构及阻变性能

李嘉川; 何新华; 樊娇娇

doi:10.3788/fgxb20173805.0594

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电泳沉积法制备的Zn_1-xC_xO薄膜的结构及阻变性能

材料合成及性能 | 更新时间：2020-08-12

- 电泳沉积法制备的Zn_1-xC_xO薄膜的结构及阻变性能
- Structure and Resistive Switching Behaviors of Zn_1-xCu_xO Films Derived by Electrophoretic Deposition
- 发光学报 2017年38卷第5期页码：594-600
- 作者机构：
  
  华南理工大学材料科学与工程学院,广东广州,510640
- 作者简介：
- 基金信息：
  
  广东省科技计划（2007A010500012，2013A011401010）资助项目
- DOI：10.3788/fgxb20173805.0594
  中图分类号： O484.4
- 纸质出版日期：2017-5-5，
  
  收稿日期：2016-10-11，
  
  修回日期：2017-3-12，
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李嘉川, 何新华, 樊娇娇. 电泳沉积法制备的Zn1-xCxO薄膜的结构及阻变性能[J]. 发光学报, 2017,38(5): 594-600

LI Jia-chuan, HE Xin-hua, FAN Jiao-jiao. Structure and Resistive Switching Behaviors of Zn1-xCuxO Films Derived by Electrophoretic Deposition[J]. Chinese Journal of Luminescence, 2017,38(5): 594-600
李嘉川, 何新华, 樊娇娇. 电泳沉积法制备的Zn1-xCxO薄膜的结构及阻变性能[J]. 发光学报, 2017,38(5): 594-600 DOI： 10.3788/fgxb20173805.0594.

LI Jia-chuan, HE Xin-hua, FAN Jiao-jiao. Structure and Resistive Switching Behaviors of Zn1-xCuxO Films Derived by Electrophoretic Deposition[J]. Chinese Journal of Luminescence, 2017,38(5): 594-600 DOI： 10.3788/fgxb20173805.0594.

摘要

采用电泳沉积法在FTO导电玻璃基片上制备Zn

O薄膜，并对其微观结构、光致发光谱、伏安特性、保持特性和转换电压分布进行探讨。PL谱表明，Cu掺杂在禁带中引入深受主能级，降低氧空位浓度，导致ZnO薄膜的紫外发光、蓝光发光和绿光发光峰强度降低。所得薄膜的晶粒细小、致密、均匀，具有稳定的双极性阻变特性，开关比

off

最高达到10

，其低阻态（LRS）和高阻态（HRS）的阻变机理分别符合欧姆定律和空间电荷限制传导理论。器件经100次循环测试后开关比无明显变化，呈现出较为良好的抗疲劳特性。Cu掺杂对LRS影响不大，但显著改善了HRS的分散性以及转换电压

SET

的分散性。当Cu掺杂量

=0.04时，器件表现出良好的综合性能：

off

，

off

，

SET

介于0.4~3.03 V之间。

Abstract

O films were fabricated on FTO substrates by electrophoretic deposition. The microstructure

PL spectra

I-V

characteristics

retention measurement and switching voltage distribution were investigated. PL spectra indicate that Cu doping introduces deep acceptor level in the bandgap and decreases the concentration of oxygen vacancy

which result in the decreasing intensity of ultraviolet

blue and green luminescence. The deposited films are dense and uniform

and exhibit bipolar resistive switching behaviors with a high OFF/ON ratio of 10

. The resistive switching behaviors are governed by Ohm's law in the LRS and space charge limited conduction (SCLC) in the HRS

respectively. Good endurance characteristics can be retained after 100 switching cycles without any obvious fluctuation in

off

ratio. Cu

doping has little influence on low resistance state (LRS)

but decreases the dispersion in high resistance state (HRS) and switching voltage

SET

. When Cu doping content

=0.04

the devices show good properties:

off

and the value of

SET

is 0.4-3.03 V.

关键词

氧化锌Cu掺杂电泳沉积阻变特性导电细丝

Keywords

ZnOCu dopingelectrophoretic depositionresistive switching characteristicsconductive filament

references

YANG Y C, PAN F, LIU Q, et al.. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application [J]. Nano Lett., 2009, 9(4):1636-1643.

CHEN G, SONG C, CHEN C, et al.. Resistive switching and magnetic modulation in cobalt-doped ZnO [J]. Adv. Mater., 2012, 24(26):3515-3520.

TANG M H, ZENG Z Q, LI J C, et al.. Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications [J]. Solid-State Electron., 2011, 63(1):100-104.

JIA C H, DONG Q C, ZHANG W F. Effect of incorporating copper on resistive switching properties of ZnO films [J]. J Alloys Compd., 2012, 520(16):250-254.

XU Q Y, WEN Z, WU D. Bipolar and unipolar resistive switching in Zn0.98Cu0.02O films [J]. J. Phys. D: Appl. Phys., 2011, 44(33):335104-335107.

LI Y, ZHAO G, SU J, et al.. Top electrode effects on resistive switching behavior in CuO thin films [J]. Appl. Phys. A: Mater. Sci. Proc., 2011, 104(4):1069-1073.

李红霞, 陈雪平, 陈琪, 等. 下电极对ZnO薄膜电阻开关特性的影响 [J]. 物理学报, 2013, 62(7):077202-1-6. LI H X, CHEN X P, CHEN Q, et al.. Effects of bottom electrode on resistive switching characteristics of ZnO films [J]. Acta Phys. Sinica, 2013, 62(7):077202-1-6. (in Chinese)

PARK J, LEE S, YONG K. Photo-stimulated resistive switching of ZnO nanorods [J]. Nanotechnology, 2012, 23(38):7035-7040.

PARK K, LEE J S. Flexible resistive switching memory with a Ni/CuOx /Ni structure using an electrochemical deposition process [J]. Nanotechnology, 2016, 27(12):125203.

MA H C, YUE L X, YU C L, et al.. Synthesis, characterization and photocatalytic activity of Cu-doped Zn/ZnO photocatalyst with carbon modification [J]. J. Mater. Chem., 2012, 22:23780-23788.

JONGNAVAKIT P, AMORNPITOKSUK P. Preparation and photocatalytic activity of Cu-doped ZnO thin films prepared by the sol-gel method [J]. Appl. Surf. Sci., 2012, 258:8192-8198.

单民瑜, 陈卫星, 张文治. Cu掺杂量对ZnO:Cu纳米粉体发光性能的影响 [J]. 西北工业大学学报, 2013, 33(10):836-839. SHAN M Y, CHEN W X, ZHANG W Z. Effect of the amount of Cu dopant on optical properties of ZnO:Cu nanopowders [J]. J. Xi'an Technol. Univ., 2013, 33(10):836-839. (in Chinese)

LAMPERTM A, MARK P. Current injection in solids [J]. Electron. Sci., 1970, 21(12):558.

QI J, OLMEDO M, REN J, et al.. Resistive switching in single epitaxial ZnO nanoislands [J]. ACS Nano, 2012, 6(2):1051-1058.

GUO X, SCHINDLER C, MENZEL S, et al.. Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems [J]. Appl. Phys. Lett., 2007, 91(13):042107-1-3.

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