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华南理工大学材料科学与工程学院,广东 广州,510640
纸质出版日期:2017-5-5,
收稿日期:2016-10-11,
修回日期:2017-3-12,
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李嘉川, 何新华, 樊娇娇. 电泳沉积法制备的Zn<sub>1-<em>x</em></sub>C<sub><em>x</em></sub>O薄膜的结构及阻变性能[J]. 发光学报, 2017,38(5): 594-600
LI Jia-chuan, HE Xin-hua, FAN Jiao-jiao. Structure and Resistive Switching Behaviors of Zn<sub>1-<em>x</em></sub>Cu<sub><em>x</em></sub>O Films Derived by Electrophoretic Deposition[J]. Chinese Journal of Luminescence, 2017,38(5): 594-600
李嘉川, 何新华, 樊娇娇. 电泳沉积法制备的Zn<sub>1-<em>x</em></sub>C<sub><em>x</em></sub>O薄膜的结构及阻变性能[J]. 发光学报, 2017,38(5): 594-600 DOI: 10.3788/fgxb20173805.0594.
LI Jia-chuan, HE Xin-hua, FAN Jiao-jiao. Structure and Resistive Switching Behaviors of Zn<sub>1-<em>x</em></sub>Cu<sub><em>x</em></sub>O Films Derived by Electrophoretic Deposition[J]. Chinese Journal of Luminescence, 2017,38(5): 594-600 DOI: 10.3788/fgxb20173805.0594.
采用电泳沉积法在FTO导电玻璃基片上制备Zn
1-
x
Cu
x
O薄膜,并对其微观结构、光致发光谱、伏安特性、保持特性和转换电压分布进行探讨。PL谱表明,Cu掺杂在禁带中引入深受主能级,降低氧空位浓度,导致ZnO薄膜的紫外发光、蓝光发光和绿光发光峰强度降低。所得薄膜的晶粒细小、致密、均匀,具有稳定的双极性阻变特性,开关比
R
off
/
R
on
最高达到10
5
,其低阻态(LRS)和高阻态(HRS)的阻变机理分别符合欧姆定律和空间电荷限制传导理论。器件经100次循环测试后开关比无明显变化,呈现出较为良好的抗疲劳特性。Cu掺杂对LRS影响不大,但显著改善了HRS的分散性以及转换电压
V
SET
的分散性。当Cu掺杂量
x
=0.04时,器件表现出良好的综合性能:
R
off
10
6
,
R
off
/
R
on
10
4
,
V
SET
介于0.4~3.03 V之间。
Zn
1-
x
Cu
x
O films were fabricated on FTO substrates by electrophoretic deposition. The microstructure
PL spectra
I-V
characteristics
retention measurement and switching voltage distribution were investigated. PL spectra indicate that Cu doping introduces deep acceptor level in the bandgap and decreases the concentration of oxygen vacancy
which result in the decreasing intensity of ultraviolet
blue and green luminescence. The deposited films are dense and uniform
and exhibit bipolar resistive switching behaviors with a high OFF/ON ratio of 10
5
. The resistive switching behaviors are governed by Ohm's law in the LRS and space charge limited conduction (SCLC) in the HRS
respectively. Good endurance characteristics can be retained after 100 switching cycles without any obvious fluctuation in
R
off
/
R
on
ratio. Cu
2+
doping has little influence on low resistance state (LRS)
but decreases the dispersion in high resistance state (HRS) and switching voltage
V
SET
. When Cu doping content
x
=0.04
the devices show good properties:
R
off
10
6
R
off
/
R
on
10
4
and the value of
V
SET
is 0.4-3.03 V.
氧化锌Cu掺杂电泳沉积阻变特性导电细丝
ZnOCu dopingelectrophoretic depositionresistive switching characteristicsconductive filament
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