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华东理工大学理学院 物理系, 上海 200237
纸质出版日期:2017-4-5,
收稿日期:2016-10-25,
修回日期:2016-11-25,
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高浩锋, 方圣欢, 张叶峰等. 激基复合物给体作间隔层对激子复合区域的调节[J]. 发光学报, 2017,38(4): 514-520
GAO Hao-feng, FANG Sheng-huan, ZHANG Ye-feng etc. Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 514-520
高浩锋, 方圣欢, 张叶峰等. 激基复合物给体作间隔层对激子复合区域的调节[J]. 发光学报, 2017,38(4): 514-520 DOI: 10.3788/fgxb20173804.0514.
GAO Hao-feng, FANG Sheng-huan, ZHANG Ye-feng etc. Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 514-520 DOI: 10.3788/fgxb20173804.0514.
为研究激基复合物器件激子复合区域的变化'在TPD/BPhen界面可形成激基复合物发光的基础上'以Ir(pq)
2
(acac)为探测层'制备器件ITO/MoO
3
(2.5 nm)/TPD((40-
x
)nm)/Ir(pq)
2
(acac)(0.5 nm)/TPD(
x'x
=0'3'6'10 nm)/BPhen(40 nm)/Cs
2
CO
3
/Al'其中靠近BPhen的TPD称之为间隔层。电致发光光谱表明'该组器件的激子复合区域主要位于Ir(pq)
2
(acac)薄层和TPD/BPhen界面'分别发射595 nm和478 nm的光。随着TPD间隔层厚度的增加和电压的升高'发光区域向激基复合物区域(TPD/BPhen界面)移动'即更多的电子和空穴在TPD/BPhen界面形成激基复合物发光'Ir(pq)
2
(acac)发光减弱。当间隔层厚度由0 nm增至10 nm时'6 V电压下的Ir(pq)
2
(acac)和激基复合物发光强度的比值由44降至1.5。对于间隔层厚度为6 nm的器件'Ir(pq)
2
(acac)和激基复合物发光强度的比值由6 V时的2.8降至10 V时的1.0。由此可见'激基复合物给体作间隔层能有效调节激子复合区域。
In order to adjust the exciton recombination zone of exciplex-based organic light-emitting diodes
four devices were fabricated by employing Ir(pq)
2
(acac) as a prober and utilizing the donor of exciplex as a spacer. The device structures are ITO/MoO
3
(2.5 nm)/TPD((40-
x
) nm)/Ir(pq)
2
(acac)(0.5 nm)/TPD(
x
x
=0
3
6
10 nm)/BPhen(40 nm)/Cs
2
CO
3
/Al
where
x
is the thickness of the spacer layer and the TPD/BPhen interface produces the exciplex emission. The electroluminescent spectra of the four devices include two main peaks:478 nm and 595 nm
which originate from the TPD/BPhen interface and Ir(pq)
2
(acac) layer
respectively. As both the thickness of TPD spacer and the applied voltage increase
the recombination zone shifts towards TPD/BPhen interface. That is
more electrons and holes recombine at the interface between TPD and BPhen
leading to the decreased intensity of Ir(pq)
2
(acac) emission. For instance
under an applied voltage of 6 V
the intensity ratio of emission from Ir(pq)
2
(acac) and exciplex (I
Ir complex
:I
exciplex
) is 44.0 and 1.5 for the devices with 0 and 10 nm spacer
respectively. The value of I
Ir complex
:I
exciplex
decreases from 2.8 at 6 V to 1.0 at 10 V for the device with 6-nm-thick TPD spacer. Therefore
the recombination region can be effectively tuned by utilizing the donor of exciplex as a spacer.
间隔层激基复合物激子复合区域TPDBPhen
spacerexciplexexciton recombination zoneTPDBPhen
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