激基复合物给体作间隔层对激子复合区域的调节

高浩锋; 方圣欢; 张叶峰; 陆勍; 吕昭月

doi:10.3788/fgxb20173804.0514

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激基复合物给体作间隔层对激子复合区域的调节

器件制备及器件物理 | 更新时间：2020-08-12

- 激基复合物给体作间隔层对激子复合区域的调节
- Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer
- 发光学报 2017年38卷第4期页码：514-520
- 作者机构：
  
  华东理工大学理学院物理系, 上海 200237
- 作者简介：
- 基金信息：
  
  国家自然科学基金（11504109）;上海市大学生创新训练项目（S16089）资助
- DOI：10.3788/fgxb20173804.0514
  中图分类号： TN383+.1
- 纸质出版日期：2017-4-5，
  
  收稿日期：2016-10-25，
  
  修回日期：2016-11-25，
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高浩锋, 方圣欢, 张叶峰等. 激基复合物给体作间隔层对激子复合区域的调节[J]. 发光学报, 2017,38(4): 514-520

GAO Hao-feng, FANG Sheng-huan, ZHANG Ye-feng etc. Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 514-520
高浩锋, 方圣欢, 张叶峰等. 激基复合物给体作间隔层对激子复合区域的调节[J]. 发光学报, 2017,38(4): 514-520 DOI： 10.3788/fgxb20173804.0514.

GAO Hao-feng, FANG Sheng-huan, ZHANG Ye-feng etc. Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 514-520 DOI： 10.3788/fgxb20173804.0514.

摘要

为研究激基复合物器件激子复合区域的变化'在TPD/BPhen界面可形成激基复合物发光的基础上'以Ir（pq）

（acac）为探测层'制备器件ITO/MoO

（2.5 nm）/TPD（（40-

）nm）/Ir（pq）

（acac）（0.5 nm）/TPD（

x'x

=0'3'6'10 nm）/BPhen（40 nm）/Cs

/Al'其中靠近BPhen的TPD称之为间隔层。电致发光光谱表明'该组器件的激子复合区域主要位于Ir（pq）

（acac）薄层和TPD/BPhen界面'分别发射595 nm和478 nm的光。随着TPD间隔层厚度的增加和电压的升高'发光区域向激基复合物区域（TPD/BPhen界面）移动'即更多的电子和空穴在TPD/BPhen界面形成激基复合物发光'Ir（pq）

（acac）发光减弱。当间隔层厚度由0 nm增至10 nm时'6 V电压下的Ir（pq）

（acac）和激基复合物发光强度的比值由44降至1.5。对于间隔层厚度为6 nm的器件'Ir（pq）

（acac）和激基复合物发光强度的比值由6 V时的2.8降至10 V时的1.0。由此可见'激基复合物给体作间隔层能有效调节激子复合区域。

Abstract

In order to adjust the exciton recombination zone of exciplex-based organic light-emitting diodes

four devices were fabricated by employing Ir(pq)

(acac) as a prober and utilizing the donor of exciplex as a spacer. The device structures are ITO/MoO

(2.5 nm)/TPD((40-

) nm)/Ir(pq)

(acac)(0.5 nm)/TPD(

10 nm)/BPhen(40 nm)/Cs

/Al

where

is the thickness of the spacer layer and the TPD/BPhen interface produces the exciplex emission. The electroluminescent spectra of the four devices include two main peaks:478 nm and 595 nm

which originate from the TPD/BPhen interface and Ir(pq)

(acac) layer

respectively. As both the thickness of TPD spacer and the applied voltage increase

the recombination zone shifts towards TPD/BPhen interface. That is

more electrons and holes recombine at the interface between TPD and BPhen

leading to the decreased intensity of Ir(pq)

(acac) emission. For instance

under an applied voltage of 6 V

the intensity ratio of emission from Ir(pq)

(acac) and exciplex (I

Ir complex

exciplex

) is 44.0 and 1.5 for the devices with 0 and 10 nm spacer

respectively. The value of I

Ir complex

exciplex

decreases from 2.8 at 6 V to 1.0 at 10 V for the device with 6-nm-thick TPD spacer. Therefore

the recombination region can be effectively tuned by utilizing the donor of exciplex as a spacer.

关键词

间隔层激基复合物激子复合区域TPDBPhen

Keywords

spacerexciplexexciton recombination zoneTPDBPhen

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