氧化锌作为电子传输层的量子点发光二极管

马航; 李邓化; 陈雯柏; 叶继兴

doi:10.3788/fgxb20173804.0507

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氧化锌作为电子传输层的量子点发光二极管

器件制备及器件物理 | 更新时间：2020-08-12

- 氧化锌作为电子传输层的量子点发光二极管
- Quantum Dot Light Emitting Diodes with ZnO Electron Transport Layer
- 发光学报 2017年38卷第4期页码：507-513
- 作者机构：
  
  1. 北京交通大学电子信息工程学院北京,100044
  2. 北京信息科技大学自动化学院, 北京 100101
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展计划（973）（2015CB654605）资助项目
- DOI：10.3788/fgxb20173804.0507
  中图分类号： TN383+.1
- 纸质出版日期：2017-4-5，
  
  收稿日期：2016-10-8，
  
  修回日期：2016-12-2，
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马航, 李邓化, 陈雯柏等. 氧化锌作为电子传输层的量子点发光二极管[J]. 发光学报, 2017,38(4): 507-513

MA Hang, LI Deng-hua, CHEN Wen-bai etc. Quantum Dot Light Emitting Diodes with ZnO Electron Transport Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 507-513
马航, 李邓化, 陈雯柏等. 氧化锌作为电子传输层的量子点发光二极管[J]. 发光学报, 2017,38(4): 507-513 DOI： 10.3788/fgxb20173804.0507.

MA Hang, LI Deng-hua, CHEN Wen-bai etc. Quantum Dot Light Emitting Diodes with ZnO Electron Transport Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 507-513 DOI： 10.3788/fgxb20173804.0507.

摘要

为降低量子点发光二极管（QLED）的开启电压'提高器件性能'利用电子传输性能良好的氧化锌（ZnO）作为电子传输层'制备了结构为ITO/PEDOT：PSS/poly-TPD/QDs/ZnO/Al的QLED样品。在该器件结构基础上'采用隧穿注入和空间电荷限制电流模型仿真分析了载流子在量子点（QDs）层的电流密度。研究发现'当ZnO厚度为50 nm时'poly-TPD的理论最优厚度为40 nm'载流子在QDs层的注入达到相对平衡。通过测试器件的电流密度-电压-亮度-发光效率特性'研究了空穴传输层厚度对QLED器件性能的影响。实验结果表明'当空穴传输层厚度为40 nm时'器件的开启电压为1.7 V'最大发光效率为1.18 cd/A。在9 V电压下'器件最大亮度达到5 225 cd/m

'远优于其他厚度的器件。实验结果与仿真结果基本吻合。

Abstract

In order to reduce the turn on voltage and improve the performance of QLED

ZnO film with good electronic transmission property was used as electron transport layer. The structure of the sample was ITO/PEDOT:PSS/Poly-TPD/QDs/ZnO. The models of Folwer-Nordheim tunneling injection and space-charge limited current were employed to analyze the injection current density in QDs layer. The results show that the optimal thickness of poly-TPD is confirmed to 40 nm when ZnO thickness is fixed of 50 nm

and the injection carriers in QDs layer can reach a certain balance. By measuring the current density-voltage-luminance-luminous efficiency of QLED

the influences of hole transport layer thickness on the device performance were studied. Experiment results show that the device with a hole transport layer of 40 nm has the best performances than the other devices

of which the turn on voltage is 1.7 V

the maximum lumious efficiency is 1.18 cd/A

and the maximum brightness can reach 5 225 cd/m

under the voltage of 9 V.

关键词

量子点发光二极管隧穿注入空间电荷限制电流电流密度亮度电流效率

Keywords

quantum dot light emitting diodetunneling injectionspace-charge limited currentcurrent densityluminancecurrent efficiency

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