1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究

李占行; 艾尔肯·阿不都瓦衣提; 玛丽娅·黑尼; 方亮; 高伟; 高慧; 孟宪松; 郭旗

doi:10.3788/fgxb20173804.0463

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1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究

器件制备及器件物理 | 更新时间：2020-08-12

- 1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究
- Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons
- 发光学报 2017年38卷第4期页码：463-469
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 新疆乌鲁木齐 830011
  3. 中国电子科技集团公司第十八研究所, 天津 300381
- 作者简介：
- 基金信息：
  
  中组部QR计划新疆专项;国家自然科学基金（11275262，61534008）资助项目
- DOI：10.3788/fgxb20173804.0463
  中图分类号： O475;TN304.2+3
- 纸质出版日期：2017-4-5，
  
  收稿日期：2016-10-10，
  
  修回日期：2016-12-1，
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李占行, 艾尔肯·阿不都瓦衣提等. 1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究[J]. 发光学报, 2017,38(4): 463-469

LI Zhan-hang, Aierken ABUDUWAYITI, Maliya HEINI etc. Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons[J]. Chinese Journal of Luminescence, 2017,38(4): 463-469
李占行, 艾尔肯·阿不都瓦衣提等. 1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究[J]. 发光学报, 2017,38(4): 463-469 DOI： 10.3788/fgxb20173804.0463.

LI Zhan-hang, Aierken ABUDUWAYITI, Maliya HEINI etc. Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons[J]. Chinese Journal of Luminescence, 2017,38(4): 463-469 DOI： 10.3788/fgxb20173804.0463.

摘要

对采用MOCVD方法制备的晶格匹配（LM）与晶格失配（UMM）GaInP/GaInAs/Ge三结太阳电池进行了1 MeV电子辐射效应研究。结果表明：在电子辐照下'两种电池的

I-V

特性参数（开路电压

'短路电流I

'最大输出功率

max

）均发生衰降'且晶格失配电池的

I-V

特性参数衰降均大于晶格匹配电池。在光谱响应方面'对于顶电池'晶格匹配电池的衰降大于晶格失配电池；而中间电池则前者衰降小于后者；另外'Ge底电池的光谱响应表现特殊'辐照后光谱响应变强。

Abstract

In order to obtain the space solar cells which meanwhile satisfy the requirements of radiation resistance and high efficiency

the research on the radiation effects of solar cells in space is of great significance. 1 MeV electron irradiation effects on the lattice matched and upright metamorphic GaInP/GaInAs/Ge triple-junction solar cells were investigated for the fluence range from 510

/cm

-1.510

/cm

and the irradiation flux of 1.010

/(cm

s) was investigated. The damage effects in the solar cells were studied by measuring their electrical properties and spectral response together. It is observed that the electrical parameters (

max

) of both solar cells degrade seriously

and the degradation of upright metamorphic solar cell is higher than lattice matched cell. As to the spectral response results

the GaInP top cell of lattice matched solar cell degrades more than upright metamorphic solar cell

but the GaInAs middle cell of lattice matched solar cell degrades less than upright metamorphic solar cell. Besides

the spectral response result of Ge bottom cell shows very special in both solar cells:it becomes stronger after radiation. This is mainly in that the irradiation can produce displacement damage in the crystal lattice

and the irradiation defects as recombination center can decrease the carrier lifetime

diffusion length

etc

and then affect the electrical properties of the solar cells.

关键词

辐射效应辐照退化晶格匹配晶格失配三结太阳电池

Keywords

radiation effectsradiation degradationlattice matchedupright metamorphictriple-junction solar cell

references

项明, 李明, 王六玲, 等. 空间太阳电池槽式聚光热电联供系统特性分析[J]. 光学学报, 2009, 29(2):482-489. XIANG M, LI M, WANG L L, et al.. Investigation of performance on trough concentrating solar photovoltaic/thermal system based on super cells[J]. Acta Opt. Sinica, 2009, 29(2):482-489. (in Chinese)

付蕊, 陈诺夫, 涂洁磊, 等. 基于Ⅲ-Ⅴ族材料制备的高效多结太阳电池最新技术进展[J]. 材料导报, 2015, 29(7):124-128. FU R, CHEN N F, TU J J, et al.. Latest technological development of highly efficient Ⅲ-Ⅴ multi-junction solar cells[J]. Mater. Rev., 2015, 29(7):124-128. (in Chinese)

周梅, 赵德刚. p-InGaN层厚度对p-i-n结构InGaN太阳电池性能的影响及机理[J]. 发光学报, 2015, 36(5):534-538. ZHOU M, ZHAO D G. Effect of p-InGaN layer thickness on the performance of p-i-n InGaN solar cells[J]. Chin. J. Lumin., 2015, 36(5):534-538. (in Chinese)

郑新和, 夏宇, 刘三姐, 等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015, 36(8):923-929. ZHENG X H, XIA Y, LIU S J, et al.. MBE growth of GaNAs-based superlattice solar cells and device properties[J]. Chin. J. Lumin., 2015, 36(8):923-929. (in Chinese)

SHEN J M, SUN L J, CHEN K J, et al.. Direct-bonded four-junction GaAs solar cells[J]. J. Semicond., 2015, 36(6):064012-1-4.

ZHAO Y M, DONG J R, LI K L, et al.. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. J. Semicond., 2015, 36(4):044011-1-4.

牛振红, 郭旗, 任迪远, 等. 一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性[J]. 核技术, 2007, 30(1):37-39. NIU Z H, GUO Q, REN D Y, et al.. Effects of electron irradiation on a home-made type of triple-junction GaInP/GaAs/Ge solar cell[J]. Nuclear Tech., 2007, 30(1):37-39. (in Chinese)

HU J M, WU Y Y, XIAO J D, et al.. Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation[J]. Sol. Energy Mater. Sol. Cells, 2008, 92(12):1652-1656.

LU M, WANG R, LIU Y H, et al.. Adjusted NIEL calculations for estimating proton-induced degradation of GaInP/GaAs/Ge space solar cells[J]. Nuclear Instrum. Methods Phys. Res. Sect. B:Beam Interact. Mater. At., 2011, 269(17):1884-1886.

SATO S, MIYAMOTO H, IMAIZUMI M, et al.. Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons[J]. Solar Energy Mater. Solar Cells, 2009, 93(6-7):768-773.

张新辉. GaAs/Ge太阳电池抗电子辐射研究[J]. 电源技术, 2004, 28(1):17-21. ZHANG X H. Study on anti-electron radiation of GaAs/Ge solar cells[J]. Chin. J. Power Sources, 2004, 28(1):17-21. (in Chinese)

孙希鹏, 肖志斌, 杜永超. 新型砷化镓太阳电池的宽带减反射膜设计[J]. 光学学报, 2016, 36(4):0431002-1-8. SUN X P, XIAO Z B, DU Y C. Design of broadband antireflection coating for new gallium arsenide solar cell[J]. Acta Opt. Sinica, 2016, 36(4):0431002-1-8. (in Chinese)

胡建民, 吴宜勇, 钱勇, 等. GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应[J]. 物理学报, 2009, 58(7):5051-5056. HU J M, WU Y Y, QIAN Y, et al.. Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell[J]. Acta Phys. Sinica, 2009, 58(7):5051-5056. (in Chinese)

王祖军, 唐本奇, 黄绍艳, 等. GaAs太阳电池1 MeV电子辐射效应数值模拟[J]. 核电子学与探测技术, 2005, 25(1):97-99 WANG Z J, TANG B Q, HUANG S Y, et al.. Simulation of radiation effects on GaAs solar cell by 1 MeV electrons[J]. Nuclear Electron. Detect. Technol., 2005, 25(1):97-99. (in Chinese)

王荣, 刘运宏, 孙旭芳, 等. 国产高效GaInP/GaAs/Ge三结太阳电池的低能质子辐射效应[J]. 半导体学报, 2007, 28(10):1599-1602. WANG R, LIU Y H, SUN X F, et al.. Low-energy proton Irradiation effects of GaInP/GaAs/Ge triple-junction solar cells for space use[J]. J. Semicond., 2007, 28(10):1599-1602. (in Chinese)

DHARMARASU N, KHAN A, YAMAGUCHI M, et al.. Effects of proton irradiation on n+p InGaP solar cells[J]. J. Appl. Phys., 2002, 91(5):3306-3311.

HU J M, WU Y Y, ZHANG Z W, et al.. A study on the degradation of GaAs/Ge solar cells irradiated by <200 keV protons[J]. Nuclear Instrum. Methods Phys. Res. Sect. B:Beam Interact. Mater. At., 2008, 266(2):267-270.

YAMAGUCHI M. Radiation-resistant solar cells for space use[J]. Sol. Energy Mater. Sol. Cells, 2001, 68(1):31-53.

MEUSEL M, BAUR C, LTAY G, et al.. Spectral response measurements of monolithic GaInP/Ga(In)As/Ge triple-junction solar cells:measurement artifacts and their explanation[J]. Prog. Photovolt. Res. Appl., 2003, 11(8):499-514.

SUGAI M, HARADA J, IMAIZUMI M, et al.. A study on the artifact external quantum efficiency of Ge bottom subcells in triple-junction solar cells[C]. Proceedings of The 2013 IEEE 39th Photovoltaic Specialists Conference, Tampa, USA, 2013:715-720.

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