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1. 中国科学院大学 北京,100049
2. 中国科学院新疆理化技术研究所 中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 新疆 乌鲁木齐 830011
3. 中国电子科技集团公司第十八研究所, 天津 300381
纸质出版日期:2017-4-5,
收稿日期:2016-10-10,
修回日期:2016-12-1,
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李占行, 艾尔肯·阿不都瓦衣提等. 1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究[J]. 发光学报, 2017,38(4): 463-469
LI Zhan-hang, Aierken ABUDUWAYITI, Maliya HEINI etc. Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons[J]. Chinese Journal of Luminescence, 2017,38(4): 463-469
李占行, 艾尔肯·阿不都瓦衣提等. 1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究[J]. 发光学报, 2017,38(4): 463-469 DOI: 10.3788/fgxb20173804.0463.
LI Zhan-hang, Aierken ABUDUWAYITI, Maliya HEINI etc. Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons[J]. Chinese Journal of Luminescence, 2017,38(4): 463-469 DOI: 10.3788/fgxb20173804.0463.
对采用MOCVD方法制备的晶格匹配(LM)与晶格失配(UMM)GaInP/GaInAs/Ge三结太阳电池进行了1 MeV电子辐射效应研究。结果表明:在电子辐照下'两种电池的
I-V
特性参数(开路电压
V
oc
'短路电流I
sc
'最大输出功率
P
max
)均发生衰降'且晶格失配电池的
I-V
特性参数衰降均大于晶格匹配电池。在光谱响应方面'对于顶电池'晶格匹配电池的衰降大于晶格失配电池;而中间电池则前者衰降小于后者;另外'Ge底电池的光谱响应表现特殊'辐照后光谱响应变强。
In order to obtain the space solar cells which meanwhile satisfy the requirements of radiation resistance and high efficiency
the research on the radiation effects of solar cells in space is of great significance. 1 MeV electron irradiation effects on the lattice matched and upright metamorphic GaInP/GaInAs/Ge triple-junction solar cells were investigated for the fluence range from 510
14
e
/cm
2
-1.510
15
e
/cm
2
and the irradiation flux of 1.010
11
e
/(cm
2
s) was investigated. The damage effects in the solar cells were studied by measuring their electrical properties and spectral response together. It is observed that the electrical parameters (
V
oc
I
sc
P
max
) of both solar cells degrade seriously
and the degradation of upright metamorphic solar cell is higher than lattice matched cell. As to the spectral response results
the GaInP top cell of lattice matched solar cell degrades more than upright metamorphic solar cell
but the GaInAs middle cell of lattice matched solar cell degrades less than upright metamorphic solar cell. Besides
the spectral response result of Ge bottom cell shows very special in both solar cells:it becomes stronger after radiation. This is mainly in that the irradiation can produce displacement damage in the crystal lattice
and the irradiation defects as recombination center can decrease the carrier lifetime
diffusion length
etc
.
and then affect the electrical properties of the solar cells.
辐射效应辐照退化晶格匹配晶格失配三结太阳电池
radiation effectsradiation degradationlattice matchedupright metamorphictriple-junction solar cell
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LU M, WANG R, LIU Y H, et al.. Adjusted NIEL calculations for estimating proton-induced degradation of GaInP/GaAs/Ge space solar cells[J]. Nuclear Instrum. Methods Phys. Res. Sect. B:Beam Interact. Mater. At., 2011, 269(17):1884-1886.
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孙希鹏, 肖志斌, 杜永超. 新型砷化镓太阳电池的宽带减反射膜设计[J]. 光学学报, 2016, 36(4):0431002-1-8. SUN X P, XIAO Z B, DU Y C. Design of broadband antireflection coating for new gallium arsenide solar cell[J]. Acta Opt. Sinica, 2016, 36(4):0431002-1-8. (in Chinese)
胡建民, 吴宜勇, 钱勇, 等. GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应[J]. 物理学报, 2009, 58(7):5051-5056. HU J M, WU Y Y, QIAN Y, et al.. Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell[J]. Acta Phys. Sinica, 2009, 58(7):5051-5056. (in Chinese)
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SUGAI M, HARADA J, IMAIZUMI M, et al.. A study on the artifact external quantum efficiency of Ge bottom subcells in triple-junction solar cells[C]. Proceedings of The 2013 IEEE 39th Photovoltaic Specialists Conference, Tampa, USA, 2013:715-720.
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