载流子分布对GaN基LED频率特性的影响

吴春晖; 朱石超; 付丙磊; 刘磊; 赵丽霞; 王军喜; 陈宏达

doi:10.3788/fgxb20173803.0347

您当前的位置：

首页 >

文章列表页 >

载流子分布对GaN基LED频率特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 载流子分布对GaN基LED频率特性的影响
- Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs
- 发光学报 2017年38卷第3期页码：347-352
- 作者机构：
  
  1. 中国科学院半导体研究所半导体照明研发中心北京,100083
  2. 中国科学院半导体研究所集成光电子学国家重点实验室北京,100083
  3. 中电科电子装备集团有限公司北京,100070
- 作者简介：
- 基金信息：
  
  国家自然科学基金（11574306）();中国国际科技合作计划（2015AA03A101，2014BAK02B08，2015AA033303）资助项目()
- DOI：10.3788/fgxb20173803.0347
  中图分类号： TN383+.1
- 纸质出版日期：2017-3-5，
  
  收稿日期：2016-9-3，
  
  修回日期：2016-9-29，
扫描看全文
吴春晖, 朱石超, 付丙磊等. 载流子分布对GaN基LED频率特性的影响[J]. 发光学报, 2017,38(3): 347-352

WU Chun-hui, ZHU Shi-chao, FU Bing-lei etc. Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs[J]. Chinese Journal of Luminescence, 2017,38(3): 347-352
吴春晖, 朱石超, 付丙磊等. 载流子分布对GaN基LED频率特性的影响[J]. 发光学报, 2017,38(3): 347-352 DOI： 10.3788/fgxb20173803.0347.

WU Chun-hui, ZHU Shi-chao, FU Bing-lei etc. Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs[J]. Chinese Journal of Luminescence, 2017,38(3): 347-352 DOI： 10.3788/fgxb20173803.0347.

摘要

分别在直流偏置和交流偏置下，对大功率GaN基LED的电学和光学特性进行了研究。结果显示，通过改变靠近p型层的量子垒（也就是最后一个量子垒）中的In组分可以调控有源区中的载流子分布。有源区内积累的电子会引起负电容效应。而通过降低有源区量子垒的势垒高度，可以改善LED中载流子传输特性，并实现载流子复合速率及通信调制带宽20%的提高。这个工作将有助于理解GaN基LED中载流子分布对频率特性的影响，并为设计适用于可见光通信的大功率高速LED奠定基础。

Abstract

The electrical and optical properties of GaN-based high power LEDs were investigated under both DC and AC bias. The results show that the carrier distribution of the active region can be modified by changing the indium concentration of the last quantum barrier. The accumulated electrons in the active region can lead to the negative capacitance effect. The improved carrier transport property for LEDs with lower quantum barrier also helps to increase the recombination rate and modulation bandwidth by 20%. This work will help to understand the influence of carrier distribution on the frequency behavior of GaN-based LEDs.

关键词

氮化镓发光二极管可见光通信调制带宽载流子分布

Keywords

GaN-basedlight emitting diodesvisible light communicationmodulation bandwidthcarrier distribution

references

HAAS H, YIN L, WANG Y L, et al.. What is LiFi?[J]. J. Lightwave Technol., 2016, 34(6):1533-1544.

LI H L, CHEN X B, GUO J Q, et al.. An analog modulator for 460 MB/S visible light data transmission based on OOK-NRS modulation[J]. IEEE Wireless Commun., 2015, 22(2):68-73.

ZHU S C, YU Z G, ZHAO L X, et al.. Enhancement of the modulation bandwidth for GaN-based light-emitting diode by surface plasmons[J]. Opt. Express, 2015, 23(11):13752-13760.

MINH H L, O'BRIEN D, FAULKNER G, et al.. 100-Mb/s NRZ visible light communications using a postequalized white LED[J]. IEEE Photon. Technol. Lett., 2009, 21(15):1063-1065.

DAVID A, GRUNDMANN M J, KAEDING J F, et al.. Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes[J]. Appl. Phys. Lett., 2008, 92(5):053502-1-3.

LIU Z Q, MA J, YI X Y, et al.. p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes[J]. Appl. Phys. Lett., 2012, 101(26):261106-1-4.

CHOI S, KIM H J, KIM S S, et al.. Improvement of peak quantum efficiency and efficiency droop in Ⅲ-nitride visible light-emitting diodes with an InAlN electron-blocking layer[J]. Appl. Phys. Lett., 2010, 96(22):221105-1-3.

FU J J, ZHAO L X, ZHANG N, et al.. Influence of electron distribution on efficiency droop for GaN-based light emitting diodes[J]. J. Solid State Light., 2015, 2(1):5.

WANG T H, KUO Y K. Efficiency enhancement of blue ingan light-emitting diodes with shallow first well[J]. IEEE Photon. Technol. Lett., 2012, 24(22):2084-2086.

RYU H Y, LEE J M. Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers[J]. Appl. Phys. Lett., 2013, 102(18):181115-1-4.

KUO Y K, CHANG J Y, TSAI M C, et al.. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers[J]. Appl. Phys. Lett., 2009, 95(1):011116-1-3.

VURGAFTMAN I, MEYER J R. Band parameters for nitrogen-containing semiconductors[J]. J. Appl. Phys., 2003, 94(6):3675-3696.

LI X, SHI Z, ZHU G Y, et al.. High efficiency membrane light emitting diode fabricated by back wafer thinning technique[J]. Appl. Phys. Lett., 2014, 105(3):031109-1-4.

YANG W, ZHANG S L, MCKENDRY J J D, et al.. Size-dependent capacitance study on InGaN-based micro-light-emitting diodes[J]. J. Appl. Phys., 2014, 116(4):044512-1-6.

FENG L F, LI Y, LI D, et al.. Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes[J]. Appl. Phys. Lett., 2012, 101(23):233506-1-4.

PINGREE L S C, SCOTT B J, RUSSELL M T, et al.. Negative capacitance in organic light-emitting diodes[J]. Appl. Phys. Lett., 2005, 86(7):073509-1-3.

SHI J W, SHEU J K, WANG C K, et al.. Linear cascade arrays of GaN-based green light-emitting diodes for high-speed and high-power performance[J]. IEEE Photonics Technol. Lett., 2007, 19(18):1368-1370.

LIAO C L, CHANG Y F, HO C L, et al.. High-speed gan-based blue light-emitting diodes with gallium-doped ZnO current spreading layer[J]. IEEE Electron Dev. Lett., 2013, 34(5):611-613.

ZHU S X, WANG J X, YAN J C, et al.. Influence of AlGaN electron blocking layer on modulation bandwidth of GaN-based light emitting diodes[J]. ECS Solid State Lett., 2014, 3(3):R11-R13.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

微腔效应影响有机发光器件调制带宽特性研究

量子点LED用于可见光通信的调制带宽研究进展

载流子复合机制对InGaN多量子阱蓝光LED调制带宽的影响