低阈值852 nm半导体激光器的温度特性

廖翌如; 关宝璐; 李建军; 刘储; 米国鑫; 徐晨

doi:10.3788/fgxb20173803.0331

您当前的位置：

首页 >

文章列表页 >

低阈值852 nm半导体激光器的温度特性

器件制备及器件物理 | 更新时间：2020-08-12

- 低阈值852 nm半导体激光器的温度特性
- Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers
- 发光学报 2017年38卷第3期页码：331-337
- 作者机构：
  
  北京工业大学光电子技术教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
  
  半导体激光器产业化技术基金（YXBGD20151JL01）();国家自然科学基金（61575008，60908012，61376049，61076044，6110702
- DOI：10.3788/fgxb20173803.0331
  中图分类号： TN248.4
- 纸质出版日期：2017-3-5，
  
  收稿日期：2016-9-13，
  
  修回日期：2016-10-21，
扫描看全文
廖翌如, 关宝璐, 李建军等. 低阈值852 nm半导体激光器的温度特性[J]. 发光学报, 2017,38(3): 331-337

LIAO Yi-ru, GUAN Bao-lu, LI Jian-jun etc. Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2017,38(3): 331-337
廖翌如, 关宝璐, 李建军等. 低阈值852 nm半导体激光器的温度特性[J]. 发光学报, 2017,38(3): 331-337 DOI： 10.3788/fgxb20173803.0331.

LIAO Yi-ru, GUAN Bao-lu, LI Jian-jun etc. Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2017,38(3): 331-337 DOI： 10.3788/fgxb20173803.0331.

摘要

通过金属有机化学气相淀积（MOCVD）和半导体后工艺技术制备了852 nm半导体激光器，它在室温下的阈值电流为57.5 mA，输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明，当温度变化范围为293~328 K时，阈值电流的变化速率为0.447 mA/K，特征温度

为142.25 K，输出的光功率变化率为0.63 mW/K。通过计算求得理想因子

为2.11，激光器热阻为77.7 K/W，中心波长漂移速率是0.249 29 nm/K，实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明，该半导体器件在293~303 K的温度范围内，各特性参数能够保持相对良好的状态。器件如果工作在高温环境，需要添加控温设备以保证器件在良好状态下运行。

Abstract

852 nm semiconductor laser was manufactured by metal organic chemical vapor deposition (MOCVD) and semiconductor subsequent technology. The threshold current of this laser was 57.5 mA

output spectral line width was less than 1 nm at room temperature. The impact of temperature on output optical power

threshold current

voltage

output centre wavelength was analyzed. When the temperature changes from 293 to 328 K

the characteristic temperature is 142.25 K

and the rates of the threshold current change and output light power are 0.447 mA/K and 0.63 mW/K

respectively. Ideal factor

is calculated to be 2.11

while the laser thermal resistance is calculated to be 77.7 K/W. The calculated center wavelength drift rate is 0.249 29 nm/K

corresponding well to the measured value in the experiment. Experimental results demonstrate that the relevant parameters of this laser are stable with the temperature ranging from 293 to 303 K. However

a temperature device is needed if a higher working temperature is required.

关键词

852 nm半导体激光器温度特性阈值电流特征温度

Keywords

852 nm semiconductor lasertemperature characteristicthreshold currentcharacteristics of the temperature

references

王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展[J]. 发光学报, 2015, 36(1):1-19. WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J]. Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)

李景, 邱运涛, 曹银花, 等. 高亮度锥形半导体激光器[J]. 发光学报, 2016, 37(8):990-995. LI J, QIU Y T, CAO Y H, et al.. High brightness tapered diode laser[J]. Chin. J. Lumin., 2016, 37(8):990-995. (in Chinese)

刘梦涵, 崔碧峰, 何新, 等. 大功率低阈值半导体激光器研究[J]. 中国激光, 2016, 43(5):502001-1-6. LIU M H, CUI B F, HE X, et al.. Study of high power semiconductor laser with low threshold current[J]. Chin. J. Lasers, 2016, 43(5):502001-1-6. (in Chinese).

李辉, 都继瑶, 曲轶, 等. 光谱稳定的低功耗980 nm单模泵浦源半导体激光器[J]. 发光学报, 2016, 37(1):33-37. LI H, DU J Y, QU Y, et al.. Low power dissipation 980 nm single mode pumping source laser with wavelength stabilization[J]. Chin. J. Lumin., 2016, 37(1):33-37. (in Chinese).

田锟, 邹永刚, 马晓辉, 等. 面发射分布反馈半导体激光器[J]. 中国光学, 2016, 9(1):51-64. TIAN K, ZOU Y G, MA X H, et al.. Surface emitting distributed feedback semiconductor lasers[J]. Chin. Opt., 2016, 9(1):51-64. (in Chinese)

王鑫, 王翠鸾, 吴霞, 等. GaAs基高功率半导体激光器单管耦合研究[J]. 发光学报, 2015, 36(9):1018-1021. WANG X, WANG C L, WU X, et al.. Coupling research of high power single GaAs based semiconductor laser[J]. Chin. J. Lumin., 2015, 36(9):1018-1021. (in Chinese)

司东海, 李建军, 付莹莹, 等. 905 nm隧道带间级联非耦合双有源区半导体激光器[J]. 光电子激光, 2016, 27(2):139-144. SI D H, LI J J, FU Y Y, et al.. 905 nm uncoupled double active region semiconductor laser with tunnel junction[J]. J. Optoelectron.Laser, 2016, 27(2):139-144. (in Chinese)

张星, 张奕, 张建伟, 等. 894 nm高温垂直腔面发射激光器及其芯片级铯原子钟系统的应用[J]. 物理学报, 2016, 65(13):134204-1-9. ZHANG X, ZHANG Y, ZHANG J W, et al.. 894 nm high temperature operating vertical-cavity surface-emitting laser and its application in Cs chip-scale atomic-clock system[J]. Acta Phys. Sinica, 2016, 65(13):134204-1-9. (in Chinese)

陈江, 李得天, 王骥, 等. 导航铯原子钟的发展现状及趋势[J]. 国际太空, 2016(4):20-24. CHEN J, LI D T, WANG J, et al.. Development and trend of navigation cesium atomic clock[J]. Space Int., 2016(4):20-24. (in Chinese)

KANAZAWA S, TAKEDA K, MIYAMOTO T, et al.. High-temperature operation of a 1.2-m single-transverse-mode highly strained GaInAs/GaAs QW laser[J]. SPIE, 2006, 6352:63520L-1-6.

张永明, 钟景昌, 路国光, 等. 808 nm InGaAsP-InP单量子阱激光器热特性研究[J]. 光子学报, 2006, 35(1):9-12. ZHANG Y M, ZHONG J C, LU G G, et al.. Study of thermal characteristics of 808 nm InGaAsP-InP SQW lasers[J]. Acta Photon. Sinica, 2006, 35(1):9-12. (in Chinese)

程灿, 辛国锋, 封惠忠, 等. 连续工作的体布拉格光栅外腔半导体激光器的温度特性[J]. 中国激光, 2008, 35(1):27-30. CHENG C, XIN G F, FENG H Z, et al.. Temperature characteristics of volume Bragg grating external cavity semiconductor laser working at continuous wave[J]. Chin. J. Lasers, 2008, 35(1):27-30. (in Chinese).

徐华伟, 宁永强, 曾玉刚, 等. 852 nm半导体激光器InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的温度稳定性[J]. 发光学报, 2012, 33(6):640-646. XU H W, NING Y Q, ZENG Y G, et al.. Temperature stability of InGaAlAs, InGaAsP, InGaAs and GaAs quantum-wells for 852 nm laser diode[J]. Chin. J. Lumin., 2012, 33(6):640-646. (in Chinese)

李再金, 芦鹏, 李特, 等. 1.06m InGaAs/InGaAsP量子阱半导体激光器的温度特性[J]. 发光学报, 2012, 33(6):647-650. LI Z J, LU P, LI T, et al.. Temperature characteristic of 1.06m InGaAs/InGaAsP quantum well laser diode[J]. Chin. J. Lumin., 2012, 33(6):647-650. (in Chinese)

黄海华, 刘云, 杨晔, 等. 850 nm锥形半导体激光器的温度特性[J]. 中国光学, 2013, 6(2):201-207. HUANG H H, LIU Y, YANG Y, et al.. Temperature characteristics of 850 nm tapered semiconductor lasers[J]. Chin. Opt., 2013, 6(2):201-207. (in Chinese)

ZHAI T, TAN S Y, LU D, et al.. High power 1060 nm distributed feedback semiconductor laser[J]. Chin. Phys. Lett., 2014, 31(2):024203.

拉里A科尔德伦, 斯科特W科尔津. 二极管激光器与集成光路[M]. 史寒星, 译. 北京:北京邮电大学出版社, 2006. COLDREN L A, CORZINE S W. Diode Lasers and Photonic Integrated Circuits[M]. SHI H X, Trans. Beijing:Beijing University of Posts and Telecommunications University Press, 2006. (in Chinese)

NELSON R, WILSON R, WRIGHT P, et al.. CW electrooptical properties of InGaAsP (=1.3m) buried-heterostructure lasers[J]. IEEE J. Quant. Electron., 1981, 17(2):202-207.

江剑平. 半导体激光器[M]. 北京:电子工业出版社, 2000:91-92. JIANG J P. Semiconductor Laser[M]. Beijing:Electronic Industry Press, 2000:91-92. (in Chinese)

汪瑜. 半导体激光器热特性分析研究[D]. 长春:长春理工大学, 2009. WANG Y. Analysis and Research for The Thermal Characteristic of The Semiconductor Laser[D]. Changchun:Changchun University of Science and Technology, 2009. (in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性

970 nm高功率光栅外腔可调谐半导体激光器

具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器

用不同的近似方法计算极性晶体中强耦合磁极化子有效质量与温度的关系

极性晶体中表面磁极化子的温度依赖性