&gamma;射线电离辐射对商用CMOS APS性能参数的影响

徐守龙; 邹树梁; 黄有骏

doi:10.3788/fgxb20173803.0308

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γ射线电离辐射对商用CMOS APS性能参数的影响

器件制备及器件物理 | 更新时间：2020-08-12

- γ射线电离辐射对商用CMOS APS性能参数的影响
- Effect of γ-ray Ionizing Radiation on CMOS Active Pixel Sensor
- 发光学报 2017年38卷第3期页码：308-315
- 作者机构：
  
  1. 南华大学核设施应急安全作业技术与装备湖南省重点实验室,湖南衡阳,421001
  2. 南华大学核科学技术学院, 湖南衡阳 421001
  3. 中国核动力研究设计院,四川成都,610213
- 作者简介：
- 基金信息：
  
  湖南省科技重大专项（2012FJ1007）();湖南省研究生科研创新项目（2015SCX02）资助()
- DOI：10.3788/fgxb20173803.0308
  中图分类号： TN65;TN946.1
- 纸质出版日期：2017-3-5，
  
  收稿日期：2016-8-22，
  
  修回日期：2016-12-29，
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徐守龙, 邹树梁, 黄有骏. γ射线电离辐射对商用CMOS APS性能参数的影响[J]. 发光学报, 2017,38(3): 308-315

XU Shou-long, ZOU Shu-liang, HUANG You-jun. Effect of γ-ray Ionizing Radiation on CMOS Active Pixel Sensor[J]. Chinese Journal of Luminescence, 2017,38(3): 308-315
徐守龙, 邹树梁, 黄有骏. γ射线电离辐射对商用CMOS APS性能参数的影响[J]. 发光学报, 2017,38(3): 308-315 DOI： 10.3788/fgxb20173803.0308.

XU Shou-long, ZOU Shu-liang, HUANG You-jun. Effect of γ-ray Ionizing Radiation on CMOS Active Pixel Sensor[J]. Chinese Journal of Luminescence, 2017,38(3): 308-315 DOI： 10.3788/fgxb20173803.0308.

摘要

研究了射线电离辐射效应对商用CMOS有源像素传感器（APS）性能参数的影响，着重分析了量子效率、转换增益、暗电流、坏点和脉冲颗粒噪声等参数。研究结果表明：当受到1 000 Gy辐射后，APS失去工作能力，无信号输出或像素灰度值仅为0，110，255 DN。

Co 射线的离位截面约为10

-25

（0.1 b）。当剂量率低于58.3 Gy/h且辐照时间较短时，辐射对量子效率及转换增益无影响，坏点产生数为0，总剂量效应使3T-APS的本底噪声升高到4.62 DN但对4T PPD APS几乎无影响。脉冲颗粒噪声引起的各灰度值像素数量分布呈泊松分布，并与剂量率正相关。

Abstract

The effect of -ray irradiation on the performance parameters of commercial off the shelf CMOS active pixel sensors was studied

specially focusing on the analysis of quantum efficiency

conversion gain

dark current

dead pixels

and pulse parameters such as particle noise pixels. As result shown

the active pixel sensors incapacitated after 1 000 Gy -ray irradiation present as no signal output or pixel gray value of only 0

110 or 255 DN. The displacement cross section of cobalt-60 of -ray is about 10

-25

(0.1 b). After short time and low dose rate irradiation below 58.3 Gy/h

the irradiation has less effect on the quantum efficiency and conversion gain

the number of dead pixels is still zero

and the background noise of 3T APS rise up to 4.62 DN but less effect on 4T-APS. The frequency of the gray value of the dark image caused by the pulse noise is in Poisson distribution and correlated with -ray radiation dose rate.

关键词

CMOS APS&gamma射线总剂量效应电离效应

Keywords

active pixel sensor&gamma-raytotal ionizing dose effectionizing radiation effect

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γ射线电离辐射对商用CMOS APS性能参数的影响

Effect of γ-ray Ionizing Radiation on CMOS Active Pixel Sensor

DOI：10.3788/fgxb20173803.0308

摘要

Abstract

关键词

Keywords

references