XU Long-quan, FANG Song, TANG Zi-han etc. Research on Heating Uniformity of MOCVD Heating Device[J]. Chinese Journal of Luminescence, 2017,38(2): 220-225
XU Long-quan, FANG Song, TANG Zi-han etc. Research on Heating Uniformity of MOCVD Heating Device[J]. Chinese Journal of Luminescence, 2017,38(2): 220-225 DOI: 10.3788/fgxb20173802.0220.
In order to improve the temperature uniform in the reaction chamber of MOCVD
the two-dimensional model was established based on the vertical MOCVD reaction chamber researched by ourselves. Using the finite element method
the incentive effect of current on the reaction chamber temperature uniformity was analyzed. For purpose to improve the temperature uniformity
the change of magnetic field and graphite disk surface radial temperature were observed by changing the current intensity and frequency. It is found that the electrical parameter is proportional to the heating efficiency but inversely proportional to heating uniformity
Under the same power
the temperature uniformity decreases with the increasing of the current frequency. Reasonable electrical parameters which reflect from above
ensure both reaction temperature and temperature uniformity
is conducive to the quality of thin film growth.
关键词
MOCVD感应加热温度均匀性
Keywords
MOCVDinduction heatingtemperature uniformity
references
ZHANG J C, LI Z M, HAO Y, et al.. Finite element analysis and optimization of temperature field in GaN-MOCVD reactor[J]. Sci. China Inform. Sci., 2010, 53(10):2138-2143.
ZHAO D M, ZHAO D G, JIANG D S, et al.. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon[J]. J. Semicond., 2015, 36(6):063003.
QU Y X, WANG B, HU S G, et al.. Analysis and design of resistance-wire heater in MOCVD reactor[J]. J. Central South Univ., 2014, 21(9):3518-3524.
李志明. 感应加热式MOCVD反应室的仿真与设计[D]. 西安:西安电子科技大学, 2011. LI Z M. Simulation and Design on MOCVD Reactor by Induction Heating [D]. Xi'an:Xidian University, 2011. (in Chinese)
MAO Q H, LIU J L, WU X M, et al.. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. J. Semicond., 2015, 36(9):093003.
金晓昌. 感应加热技术中的趋肤效应[J]. 武汉化工学院学报, 1995, 17(4):65-68. JIN X C. Skin effect in inducting heating[J]. J. Wuhan Inst. Chem. Technol., 1995, 17(4):65-68. (in Chinese)
CHEN X L, YAN C B, GENG X H, et al.. Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells[J]. J. Semicond., 2014, 35(4):043002.
詹少彬. MOCVD加热系统研究[D]. 武汉:华中科技大学, 2008. LZHAN S B. Research on MOCVD Heating System [D]. Wuhan:Huazhong University of Science and Technology, 2008. (in Chinese)