ZHANG J C, LI Z M, HAO Y, et al.. Finite element analysis and optimization of temperature field in GaN-MOCVD reactor[J]. Sci. China Inform. Sci., 2010, 53(10):2138-2143.

ZHAO D M, ZHAO D G, JIANG D S, et al.. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon[J]. J. Semicond., 2015, 36(6):063003.

QU Y X, WANG B, HU S G, et al.. Analysis and design of resistance-wire heater in MOCVD reactor[J]. J. Central South Univ., 2014, 21(9):3518-3524.

李志明. 感应加热式MOCVD反应室的仿真与设计[D]. 西安:西安电子科技大学, 2011. LI Z M. Simulation and Design on MOCVD Reactor by Induction Heating [D]. Xi'an:Xidian University, 2011. (in Chinese)

MAO Q H, LIU J L, WU X M, et al.. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. J. Semicond., 2015, 36(9):093003.

金晓昌. 感应加热技术中的趋肤效应[J]. 武汉化工学院学报, 1995, 17(4):65-68. JIN X C. Skin effect in inducting heating[J]. J. Wuhan Inst. Chem. Technol., 1995, 17(4):65-68. (in Chinese)

CHEN X L, YAN C B, GENG X H, et al.. Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells[J]. J. Semicond., 2014, 35(4):043002.

詹少彬. MOCVD加热系统研究[D]. 武汉:华中科技大学, 2008. LZHAN S B. Research on MOCVD Heating System [D]. Wuhan:Huazhong University of Science and Technology, 2008. (in Chinese)