基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件

张振; 钱磊; 韩长峰; 滕枫

doi:10.3788/fgxb20173802.0207

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基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件

器件制备及器件物理 | 更新时间：2020-08-12

- 基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件
- Electrical Bistable Devices Based on Composites of Polyvinyl Pyrrolidone and Three Dimensional Self-assembled Lead Selenide Superlattices
- 发光学报 2017年38卷第2期页码：207-212
- 作者机构：
  
  1. 北京交通大学发光与光信息教育部重点实验室, 北京 100044
  2. 苏州瑞晟太阳能有限公司, 江苏苏州 215123
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61377028，61475014，61475017）资助项目
- DOI：10.3788/fgxb20173802.0207
  中图分类号： O472.4;O469
- 纸质出版日期：2017-2-5，
  
  收稿日期：2016-8-28，
  
  修回日期：2016-10-9，
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张振, 钱磊, 韩长峰等. 基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件[J]. 发光学报, 2017,38(2): 207-212

ZHANG Zhen, QIAN Lei, HAN Chang-feng etc. Electrical Bistable Devices Based on Composites of Polyvinyl Pyrrolidone and Three Dimensional Self-assembled Lead Selenide Superlattices[J]. Chinese Journal of Luminescence, 2017,38(2): 207-212
张振, 钱磊, 韩长峰等. 基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件[J]. 发光学报, 2017,38(2): 207-212 DOI： 10.3788/fgxb20173802.0207.

ZHANG Zhen, QIAN Lei, HAN Chang-feng etc. Electrical Bistable Devices Based on Composites of Polyvinyl Pyrrolidone and Three Dimensional Self-assembled Lead Selenide Superlattices[J]. Chinese Journal of Luminescence, 2017,38(2): 207-212 DOI： 10.3788/fgxb20173802.0207.

摘要

采用旋涂工艺将PbSe三维自组装超晶格镶嵌在两层聚合物PVP中，制备了基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件，器件结构为ITO/PVP/PbSe三维自组装超晶格/PVP/Al，研究了其电学性能和记忆效应。与参比器件ITO/PVP/Al相比，器件ITO/PVP/PbSe三维自组装超晶格/PVP/Al的电流-电压特性呈现出非常明显的电双稳特性和非易失记忆行为，在相同的电压下同时具有两种不同的导电状态：低电导的关态和高电导的开态。当PVP与PbSe超晶格的质量比为1：1时，器件性能最好，其最大电流开关比为710

，经过10

s仍几乎无衰减。通过对电流-电压曲线拟合，利用不同的导电模型对器件的载流子传输机制进行了解释。结果表明，PbSe三维自组装超晶格作为电荷陷阱，可以俘获、储存及释放电荷，对器件的电双稳性能能起决定性作用。

Abstract

Electrical bistable devices utilizing three dimensional self-assembled lead selenide (PbSe) superlattices embedded between two polyvinyl pyrrolidone (PVP) layers were fabricated by using spin-coating technique. Each PbSe superlattice is a cluster with a uniform size of 50-60 nm

which consists of hundreds of PbSe nanoparticles with an average size of 5 nm. The current-voltage characteristics for the devices with an architecture of indium-tin-oxide (ITO)/PVP/PbSe superlattices/PVP/Al exhibit electrical bistabilities and memory behaviors due to the trapping

storring

and detrapping of the PbSe superlattices. The maximum ON/OFF ratio of the current bistability for the optimal device is 710

and it is maintained for 110

s with little degradation. The electrical bistable properties and the carrier transport mechanisms of the devices are interpreted by the conduction models based on the results of fitting the current-voltage curves.

关键词

电双稳器件PVPPbSe三维自组装超晶格载流子输运和记忆机理

Keywords

electrical bistable devicesPVPthree dimensional self-assembled PbSe superlatticescarrier transport and memory mechanisms

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