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1. 福州大学 平板显示技术国家地方联合工程实验室, 福建 福州 350102
2. 福建工程学院 信息科学与工程学院, 福建 福州 350108
纸质出版日期:2017-2-5,
收稿日期:2016-8-8,
修回日期:2016-9-19,
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张国成, 陈惠鹏, 郭太良. 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响[J]. 发光学报, 2017,38(2): 194-200
ZHANG Guo-cheng, CHEN Hui-peng, GUO Tai-liang. Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET[J]. Chinese Journal of Luminescence, 2017,38(2): 194-200
张国成, 陈惠鹏, 郭太良. 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响[J]. 发光学报, 2017,38(2): 194-200 DOI: 10.3788/fgxb20173802.0194.
ZHANG Guo-cheng, CHEN Hui-peng, GUO Tai-liang. Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET[J]. Chinese Journal of Luminescence, 2017,38(2): 194-200 DOI: 10.3788/fgxb20173802.0194.
通过对OTFT绝缘层SiO
2
表面分别采用十八烷基三氯硅烷(OTS)处理和原子层沉积薄层氧化铝的修饰方式,制备了喷墨打印有机薄膜晶体管并研究了修饰前后绝缘层的表面形貌、接触角及有源层的物相结构。虽然绝缘层的表面形貌在修饰前后变化不大,但是表面接触角和打印后有源层的物相结构有较大差别。OTS处理和沉积氧化铝修饰后,器件的迁移率比修饰前分别增大了4倍和9倍,而开关比则分别增大了1个和4个数量级。修饰后的最大迁移率可达0.35 cm
2
/(Vs),开关比可达6.010
6
。
OTFT devices were fabricated through inkjet printing active layer on SiO
2
dielectric. To improve the device performance
SiO
2
layer was modified with octadecyltrichlorosilane (OTS) or a thin layer of Al
2
O
3
(1 nm) by atomic layer deposition. The surface morphology
contact angle of PDVT-8 solution on the dielectric layer
and the crystalline of the inkjet printing active layers were examined. The surface morphology of the modified dielectric layer is slightly various with SiO
2
layer
while the contact angle and crystalline of the inkjet printing active layer change significantly. For OTS-treated dielectric layer and ALD Al
2
O
3
-treated dielectric layer
the mobility increases 4 times and 9 times
while the on/off current ratio increases 1 order of magnitude and 4 orders of magnitude
respectively
The maximum value of mobility and the on/off current ratio are 0.35 cm
2
/(Vs) and 6.010
6
.
有机薄膜晶体管喷墨打印表面修饰原子层沉积
OTFTinkjet printingsurface modificationALD
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