浏览全部资源
扫码关注微信
1. 中国科学院大学, 北京 100049
2. 中国科学院 特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 中国科学院 新疆理化技术研究所, 新疆 乌鲁木齐 830011
3. 重庆光电技术研究所, 重庆 400060
纸质出版日期:2017-2-5,
收稿日期:2016-8-22,
修回日期:2016-9-21,
扫 描 看 全 文
玛丽娅, 李豫东, 郭旗等. CMOS有源像素图像传感器的电子辐照损伤效应研究[J]. 发光学报, 2017,38(2): 182-187
MA Li-ya, LI Yu-dong, GUO Qi etc. Electron Beam Radiation Effects on CMOS Active Pixel Sensor[J]. Chinese Journal of Luminescence, 2017,38(2): 182-187
玛丽娅, 李豫东, 郭旗等. CMOS有源像素图像传感器的电子辐照损伤效应研究[J]. 发光学报, 2017,38(2): 182-187 DOI: 10.3788/fgxb20173802.0182.
MA Li-ya, LI Yu-dong, GUO Qi etc. Electron Beam Radiation Effects on CMOS Active Pixel Sensor[J]. Chinese Journal of Luminescence, 2017,38(2): 182-187 DOI: 10.3788/fgxb20173802.0182.
对某国产CMOS图像传感器进行了两种不同能量的电子辐照试验,在辐照前后及退火过程中采用离线测量方法,考察了暗信号、饱和电压、光谱响应特性等参数,分析了器件的电子辐照效应损伤机理。结果表明:暗信号和暗信号非均匀性都随着辐照剂量的增加及高温退火时间的延长而增大;饱和电压在两种能量电子辐照下均出现较大幅度的减小,并在高温退火过程中有所恢复;光谱响应特性无特别明显变化。经分析,暗电流、饱和电压的变化主要由辐照诱发的氧化物陷阱电荷导致的光敏二极管耗尽层展宽和界面陷阱电荷密度增大导致产生-复合中心的增加所引起。
Electron beam irradiation experiments were taken on the domestic CMOS image sensors
the irradiation effect and damage mechanism of the devices were analyzed. By using off-line measuring method before and after irradiation and in the process of annealing
the parameters such as dark signal
saturated voltage
spectral response characteristics were measured. The experiment results show that the non-uniformity of dark signal and dark current increase with the increase of irradiation dose and high temperature annealing time. The saturation voltages reduce significantly under the electron beam irradiation and recover in the process of high temperature annealing. There is no significant change for spectral response characteristics before and after the irradiation. The changes of the dark current
saturation voltage are due to the broadening of the photodiode depletion layer caused by irradiation-induced oxide trapped charge and the increase of recombination centers caused by irradiation-induced interface states.
电子辐照CMOS有源像素传感器暗信号
electron irradiationCMOS active pixel sensordark current
刘智. CMOS图像传感器在星敏感器中应用研究[D]. 长春:中国科学院长春光学精密机械与物理研究所, 2004. LIU Z. Study on Application Technique of CMOS Imager in Star Tracker [D]. Changchun:Changchun Institute of Optics, Fine Mechanics and Physics, 2004. (in Chinese)
BIGAS M, CABRUJA E, FOREST J, et al.. Review of CMOS image sensors[J]. Microelectron. J., 2006, 37(5):433-451.
KEMPAINEN S. CMOS image sensors:eclipsing CCDs in visual information[J]. EDN, 1997, 42(21):101-110.
CHEN C H, TSAI H J, HUANG K S, et al.. Study for cross contamination between CMOS image sensor and IC product[C]. Proceedings of 2001 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Munich, Germany, 2001:121-123.
WONG H S P. CMOS image sensors-recent advances and device scaling considerations[C]. Proceedings of International Electron Devices Meeting, Washington DC, USA, 1997:201-204.
THEUWISSEN A J P. CCD or CMOS image sensors for consumer digital still photography[C]. Proceedings of 2001 International Symposium on VLSI Technology, Systems, and Applications, Hsinchu, Taiwan, China, 2001:168-171.
CLAEYS C, SIMOEN E. Radiation Effects in Advanced Semiconductor Materials and Devices [M]. Berlin Heidelberg:Springer, 2002.
BEAUMEL M, HERVE D, VAN AKEN D. Cobalt-60, proton and electron irradiation of a radiation-hardened active pixel sensor[J]. IEEE Trans. Nucl. Sci., 2010, 57(4):2056-2065.
汪波, 李豫东, 郭旗, 等. 60Co-射线辐照CMOS有源像素传感器诱发暗信号退化的机理研究[J]. 物理学报, 2014, 63(5):056102-1-7. WANG B, LI Y D, GUO Q, et al.. Research on dark signal degradation in 60Co-ray-irradiated CMOS active pixel sensor[J]. Acta Phys. Sinica, 2014, 63(5):056102-1-7. (in Chinese)
汪波, 李豫东, 郭旗, 等. 0.5m工艺CMOS有源像素传感器的总剂量辐射效应[J]. 发光学报, 2015, 36(2):242-248. WANG B, LI Y D, GUO Q, et al.. Total dose effects in 0.5m CMOS active pixel image sensor[J]. Chin. J. Lumin., 2015, 36(2):242-248. (in Chinese)
汪波, 文林, 李豫东, 等. 质子、中子、60Co-射线辐照对电荷耦合器件饱和输出电压的影响[J]. 红外与激光工程, 2015, 44(S):35-40. WANG B, WEN L, LI Y D, et al.. Degradation of saturation output of CCD induced by proton, neutron and cobalt-60 irradiation[J]. Infrared Laser Eng., 2015, 44(S):35-40. (in Chinese)
孟祥提, 康爱国, 黄强. 射线辐照对数字型彩色CMOS图像传感器输出特性的影响[J]. 原子能科学技术, 2004, 38(S):231-235. MENG X T, KANG A G, HUANG Q. Effect of gamma-ray irradiation on output characteristic of color CMOS digital image sensors[J]. Atom. Energy Sci. Technol., 2004, 38(S):231-215. (in Chinese)
周彦平, 王晓明, 常国龙, 等. CMOS图像传感器的辐射实验[J]. 红外与激光工程, 2011, 40(7):1270-1273. ZHOU Y P, WANG X M, CHANG G L, et al.. Radiation experiment of CMOS image sensor[J]. Infrared Laser Eng., 2011, 40(7):1270-1273. (in Chinese)
汪波, 李豫东, 郭旗, 等. CMOS有源像素传感器的中子辐照位移损伤效应[J]. 强激光与粒子束, 2015, 27(9):094001-1-5. WANG B, LI Y D, GUO Q, et al.. Neutron irradiation induced displacement damage effects on CMOS active pixel image sensor[J]. High Power Laser Part. Beams, 2015, 27(9):094001-1-5. (in Chinese)
李豫东, 汪波, 郭旗, 等. CCD与CMOS图像传感器辐射效应测试系统[J]. 光学精密工程, 2013, 21(11):2778-2784. LI Y D, WANG B, GUO Q, et al.. Testing system for radiation effects of CCD and CMOS image sensors[J]. Opt. Precision Eng., 2013, 21(11):2778-2784. (in Chinese)
LI Y D, ZHANG L Q, GUO Q, et al.. Radiation damage test method for CCD[C]. National Academic Conference on Nuclear Electronics and Nuclear Detection Technology, Mianyang, Sichuan, 2012.
EID E S, CHAN T Y, FOSSURN E R, et al.. Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose[J]. IEEE Trans. Nucl. Sci., 2001, 48(6):1796-1806.
GOIFFON V, MAGNAN P, BERNARD F, et al.. Ionizing radiation effects on CMOS imagers manufactured in deep submicron process[J]. SPIE, 2008:681607-1-12.
GOIFFON V, ESTRIBEAU M, MAGNAN P. Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology[J]. IEEE Trans. Electron Dev., 2009, 56(11):2594-2601.
HOPKINSON G R, MOHAMMADZADEH A, HARBOE-SORENSEN R. Radiation effects on a radiation-tolerant CMOS active pixel sensor[J]. IEEE Trans. Nucl. Sci., 2004, 51(5):2753-2762.
闫劲云, 江洁, 张广军. 像增强型图像传感器在总剂量辐照下的光响应度[J]. 光学精密工程, 2014, 22(12):3153-3159. YAN J Y, JIANG J, ZHANG G J. Photoelectric response of ICMOS on total dose irradiation[J].Opt. Precision Eng., 2014, 22(12):3153-3159. (in Chinese)
0
浏览量
62
下载量
2
CSCD
关联资源
相关文章
相关作者
相关机构