电子传输层厚度及阻塞层对量子点发光二极管性能的影响

马航; 李邓化; 陈雯柏; 叶继兴

doi:10.3788/fgxb20173801.0085

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电子传输层厚度及阻塞层对量子点发光二极管性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 电子传输层厚度及阻塞层对量子点发光二极管性能的影响
- Influence of Thickness of Electron Transport Layer and Block Layer on The Properties of Quantum Dot Light Emitting Diodes
- 发光学报 2017年38卷第1期页码：85-90
- 作者机构：
  
  1. 北京交通大学电子信息工程学院北京,100044
  2. 北京信息科技大学自动化学院北京,100101
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展计划（973）（2015CB654605）资助项目()
- DOI：10.3788/fgxb20173801.0085
  中图分类号： TN383+.1
- 纸质出版日期：2017-1-5，
  
  收稿日期：2016-6-15，
  
  修回日期：2016-7-28，
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马航, 李邓化, 陈雯柏等. 电子传输层厚度及阻塞层对量子点发光二极管性能的影响[J]. 发光学报, 2017,38(1): 85-90

MA Hang, LI Deng-hua, CHEN Wen-bai etc. Influence of Thickness of Electron Transport Layer and Block Layer on The Properties of Quantum Dot Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2017,38(1): 85-90
马航, 李邓化, 陈雯柏等. 电子传输层厚度及阻塞层对量子点发光二极管性能的影响[J]. 发光学报, 2017,38(1): 85-90 DOI： 10.3788/fgxb20173801.0085.

MA Hang, LI Deng-hua, CHEN Wen-bai etc. Influence of Thickness of Electron Transport Layer and Block Layer on The Properties of Quantum Dot Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2017,38(1): 85-90 DOI： 10.3788/fgxb20173801.0085.

摘要

针对量子点发光二极管（QLED）中载流子注入不平衡的问题，对空穴和电子在量子点层的注入速率进行了研究。制备了不同电子传输层厚度、结构为ITO/PEDOT∶PSS/Poly-TPD/QDs/Alq

/Al的QLED样品。Alq

厚度由25 nm逐步递增至45 nm时，器件的开启电压升高，器件均发出量子点的红光。当Alq

厚度为30 nm时，器件的电流效率最高。此时，空穴和电子在量子点层的注入速率达到相对平衡。为进一步研究器件的发光特性，在QDs和Alq

接触界面嵌入电子阻塞层TPD。研究发现，当TPD的厚度为1 nm时，器件发出红光；当TPD厚度为3 nm和5 nm时，器件开始出现绿光。实验结果表明，在选取电子阻塞层时，应选择LUMO较低的材料且阻塞层的厚度必须很薄。

Abstract

In view of carrier injection unbalance problem of the quantum dot light emitting diode (QLED)

the injection rate of holes and electrons in the quantum dots (QDs) layer was studied. QLED with structure of ITO/PEDOT:PSS/Poly-TPD/QDs/Alq

was fabricated. The experiment results show that all the devices exhibit red light and the turn-on voltage rises as the Alq

thickness increases from 25 nm to 45 nm. When the Alq

thickness is 30 nm

the current efficiency of the device is high and the injection rate of holes and electrons in the QDs layer reaches a relative balance. Then

the luminescence properties of the devices were further studied through imbedding an electron blocking layer TPD into the QDs/Alq

interface. When the TPD thickness is 1 nm

the device still exhibits red light

and green light begins to appear when the TPD thickness is 3 nm and 5 nm. The experiment results show that a thinner thickness and lower LUMO should be chosen for the electron blocking layer.

关键词

量子点发光二极管厚度能级电流密度亮度电流效率

Keywords

quantum dot light emitting diodethicknessenergy levelcurrent densityluminancecurrent efficiency

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