Ta2O5-PMMA复合栅绝缘层对OFETs性能的影响

石晓东; 王伟; 李春静; 任利鹏; 尹强

doi:10.3788/fgxb20173801.0070

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Ta₂O₅-PMMA复合栅绝缘层对OFETs性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- Ta₂O₅-PMMA复合栅绝缘层对OFETs性能的影响
- Effect of Ta₂O₅-PMMA Compound Gate Insulator on The Performance of Organic Field Effect Transistors
- 发光学报 2017年38卷第1期页码：70-75
- 作者机构：
  
  河北工业大学电子信息工程学院, 天津市电子材料与器件重点实验室天津,300401
- 作者简介：
- 基金信息：
  
  河北省自然科学基金（F2012202075）();天津市自然科学基金（15JCYBJC52100）资助项目()
- DOI：10.3788/fgxb20173801.0070
  中图分类号： O47;TN321+.5
- 纸质出版日期：2017-1-5，
  
  收稿日期：2016-7-2，
  
  修回日期：2016-8-28，
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石晓东, 王伟, 李春静等. Ta2O5-PMMA复合栅绝缘层对OFETs性能的影响[J]. 发光学报, 2017,38(1): 70-75

SHI Xiao-dong, WANG Wei, LI Chun-jing etc. Effect of Ta2O5-PMMA Compound Gate Insulator on The Performance of Organic Field Effect Transistors[J]. Chinese Journal of Luminescence, 2017,38(1): 70-75
石晓东, 王伟, 李春静等. Ta2O5-PMMA复合栅绝缘层对OFETs性能的影响[J]. 发光学报, 2017,38(1): 70-75 DOI： 10.3788/fgxb20173801.0070.

SHI Xiao-dong, WANG Wei, LI Chun-jing etc. Effect of Ta2O5-PMMA Compound Gate Insulator on The Performance of Organic Field Effect Transistors[J]. Chinese Journal of Luminescence, 2017,38(1): 70-75 DOI： 10.3788/fgxb20173801.0070.

摘要

选用五氧化二钽（Ta

）-聚甲基丙烯酸甲酯（PMMA）复合材料作为栅绝缘层制备了并五苯有机场效应晶体管（OFETs）。通过在Ta

表面旋涂一层PMMA可以降低栅绝缘层的表面粗糙度，增大其场效应晶体管的迁移率。研究了厚度在20~60 nm范围内的PMMA对复合绝缘层表面形貌、粗糙度以及器件电学性能的影响。结果表明，当PMMA厚度为40 nm时，器件的电学性能最佳。与单一的Ta

栅绝缘层器件相比，其场效迁移率由4.210

-2

/（Vs）提高到0.31 cm

/（Vs）；栅电压增加到-20 V时，开关电流比由2.910

增大到2.910

。

Abstract

This paper reports pentacene field effect transistors (OFETs) with a gate insulator made of compound Ta

-PMMA where PMMA (poly (methyl methacrylate)) is spin-coated onto the top of evaporated layer of Ta

. A comparison with devices with only Ta

is presented. The latter not only shows a high surface roughness but also exhibits very low field-effect mobility. These drawbacks can be overcome by depositing a PMMA layer on Ta

. The influence of PMMA thickness in the range 20-60 nm is presented. The results show that when the thickness of PMMA is approximately 40 nm

the electrical performance of OFETs is optimal. Compared with conventional OFETs

the field-effect mobility increases from 4.210

-2

to 0.31 cm

/(Vs)

and the on/off current ratio increases from 2.910

to 2.910

when the gate voltage increases to -20 V.

关键词

Ta2O5-PMMA绝缘层OFETs迁移率开关电流比

Keywords

Ta2O5-PMMAinsulatorOFETsmobilityon/off current ratio

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