InGaN/GaN多量子阱LED载流子泄漏与温度关系研究

刘诗涛; 王立; 伍菲菲; 杨祺; 何沅丹; 张建立; 全知觉; 黄海宾

doi:10.3788/fgxb20173801.0063

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InGaN/GaN多量子阱LED载流子泄漏与温度关系研究

器件制备及器件物理 | 更新时间：2020-08-12

- InGaN/GaN多量子阱LED载流子泄漏与温度关系研究
- Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes
- 发光学报 2017年38卷第1期页码：63-69
- 作者机构：
  
  1. 南昌大学材料科学与工程学院,江西南昌,330031
  2. 南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
  3. 南昌大学光伏研究院,江西南昌,330031
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61564007，11364034）();江西省科技支撑计划（2014BE50035）资助项目()
- DOI：10.3788/fgxb20173801.0063
  中图分类号： O484.4;TN383+.1
- 纸质出版日期：2017-1-5，
  
  收稿日期：2016-7-17，
  
  修回日期：2016-9-24，
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刘诗涛, 王立, 伍菲菲等. InGaN/GaN多量子阱LED载流子泄漏与温度关系研究[J]. 发光学报, 2017,38(1): 63-69

LIU Shi-tao, WANG Li, WU Fei-fei etc. Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2017,38(1): 63-69
刘诗涛, 王立, 伍菲菲等. InGaN/GaN多量子阱LED载流子泄漏与温度关系研究[J]. 发光学报, 2017,38(1): 63-69 DOI： 10.3788/fgxb20173801.0063.

LIU Shi-tao, WANG Li, WU Fei-fei etc. Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2017,38(1): 63-69 DOI： 10.3788/fgxb20173801.0063.

摘要

通过测量光电流，直接观察了InGaN/GaN量子阱中载流子的泄漏程度随温度升高的变化关系。当LED温度从300 K升高到360 K时，在相同的光照强度下，LED的光电流增大，说明在温度上升之后，载流子从量子阱中逃逸的数目更多，即载流子泄漏比例增大。同时，光电流的增大在激发密度较低的时候更为明显，而且光电流随温度的增加幅度与激发光子的能量有关。用量子阱-量子点复合模型能很好地解释所观察到的实验现象。实验结果直接证明，随着温度的升高，InGaN/GaN量子阱中的载流子泄漏将显著增加，而且在低激发密度下这一效应更为明显。温度升高导致的载流子泄漏增多是InGaN多量子阱LED发光效率随温度升高而降低的重要原因。

Abstract

By measuring the photocurrent

we directly observed the relationship between the degree of carrier leakage and the temperature in InGaN multiple quantum wells. When LED's working temperature rises from room temperature to 360 K

the photocurrent increases under the same light intensity. The increase of the sample's photocurrent means larger amount of carrier leakage when the temperature rises. At the same time

it is found that the carriers leak more in a lower density

and the increase of photocurrent is related to the emission photon energy. The model of quantum well-quantum dot can explain the phenomena observed in the experiment

such as the rise of temperature shows little influence on carrier leakage when the excitation light wavelength is relatively short

and causes more carrier leakage when the emission light wavelength is longer. Also

this model can well explain that the carriers leak more in a lower density and leak less in a higher density when the temperature rises. The experiment results suggest that the carrier leakage is the dominant mechanism for T-droop effect when the temperature rises from 300 to 360 K.

关键词

InGaN/GaN多量子阱发光二极管载流子泄漏量子效率

Keywords

InGaN/GaN MQWslight-emitting diodescarrier leakagequantum efficiency

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