基于GaN基HEMT结构的传感器件研究进展

朱彦旭; 王岳华; 宋会会; 李赉龙; 石栋

doi:10.3788/fgxb20163712.1545

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基于GaN基HEMT结构的传感器件研究进展

器件制备及器件物理 | 更新时间：2020-08-12

- 基于GaN基HEMT结构的传感器件研究进展
- Progress of Sensor Elements Based on GaN-based HEMT Structure
- 发光学报 2016年37卷第12期页码：1545-1553
- 作者机构：
  
  北京工业大学光电子技术教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
  
  教师队伍建设（PXM2016_014204_000017_00205938_FCG）青年拔尖项目（市级）();国家自然科学基金（61574011）();北京市自然科学基
- DOI：10.3788/fgxb20163712.1545
  中图分类号： TN366;TN386.3;TP212
- 纸质出版日期：2016-12-10，
  
  收稿日期：2016-5-17，
  
  修回日期：2016-8-3，
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朱彦旭, 王岳华, 宋会会等. 基于GaN基HEMT结构的传感器件研究进展[J]. 发光学报, 2016,37(12): 1545-1553

ZHU Yan-xu, WANG Yue-hua, SONG Hui-hui etc. Progress of Sensor Elements Based on GaN-based HEMT Structure[J]. Chinese Journal of Luminescence, 2016,37(12): 1545-1553
朱彦旭, 王岳华, 宋会会等. 基于GaN基HEMT结构的传感器件研究进展[J]. 发光学报, 2016,37(12): 1545-1553 DOI： 10.3788/fgxb20163712.1545.

ZHU Yan-xu, WANG Yue-hua, SONG Hui-hui etc. Progress of Sensor Elements Based on GaN-based HEMT Structure[J]. Chinese Journal of Luminescence, 2016,37(12): 1545-1553 DOI： 10.3788/fgxb20163712.1545.

摘要

GaN基高电子迁移率晶体管（HEMT）具有异质结界面处的高二维电子气（2DEG）浓度、宽禁带、高击穿电压、稳定的化学性质以及高的电子迁移率，这些特性使它发展起来的传感器件在灵敏度、响应速度、探测面、适应恶劣环境上具备了显著的优点。本文首先围绕GaN基HEMT的基本结构发展起来的两类研究成熟的传感器，对其结构、工作机理、工作进展以及优缺点进行了探讨与总结；而后，着重从改变器件材料及优化栅结构与栅上材料的角度，阐述了3种GaN基HEMT新型传感器的最新进展，其中，从材料体系、关键工艺、探测结构、原理及新机理方面重点介绍了GaN基HEMT光探测器；最后，探索了GaN基HEMT传感器件未来的发展方向。

Abstract

The sensor elements based on GaN high electron mobility transistor (HEMT) have considerable advantages on sensitivity

response speed

detection surface

and harsh environment adaptability because of the features of HEMT

such as high 2DEG density at the hetero-interface

wide band gap

high breakdown voltage

stable chemical properties

and high electron mobility. In this paper

the structures

mechanism

progress of work

advantages and disadvantages about the two mature types of sensors developed from GaN-based HEMT basic structure are discussed and summarized firstly. Then

the latest progress on three kinds of nevel GaN-based HEMT sensors is reviewed in detail focusing on the device material and the optimization of gate structure and material. Among them

GaN-based HEMT photodetector is highlighted in the aspects of the material system

key process

detector structure

principle and new mechanisms. Finally

the future direction for the development of GaN-based HEMT sensor elements is explored.

关键词

AlGaN/GaN异质结2DEGGaN基HEMT传感器栅结构光探测器

Keywords

AlGaN/GaN heterojunction2DEGGaN-based HEMT sensorgate structurephotodetector

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