射频磁控溅射法制备SnS2薄膜结构和光学特性的研究

李学留; 刘丹丹; 梁齐; 史成武; 于永强

doi:10.3788/fgxb20163712.1521

您当前的位置：

首页 >

文章列表页 >

射频磁控溅射法制备SnS₂薄膜结构和光学特性的研究

器件制备及器件物理 | 更新时间：2020-08-12

- 射频磁控溅射法制备SnS₂薄膜结构和光学特性的研究
- Structural and Optical Properties of SnS₂ Films Prepared by RF Magnetron Sputtering
- 发光学报 2016年37卷第12期页码：1521-1531
- 作者机构：
  
  1. 合肥工业大学电子科学与应用物理学院,安徽合肥,230009
  2. 合肥工业大学化学与化工学院,安徽合肥,230009
- 作者简介：
- 基金信息：
  
  国家自然科学基金（51272061）资助项目()
- DOI：10.3788/fgxb20163712.1521
  中图分类号： O484;TN304
- 纸质出版日期：2016-12-10，
  
  收稿日期：2016-7-4，
  
  修回日期：2016-8-13，
扫描看全文
李学留, 刘丹丹, 梁齐等. 射频磁控溅射法制备SnS2薄膜结构和光学特性的研究[J]. 发光学报, 2016,37(12): 1521-1531

LI Xue-liu, LIU Dan-dan, LIANG Qi etc. Structural and Optical Properties of SnS2 Films Prepared by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2016,37(12): 1521-1531
李学留, 刘丹丹, 梁齐等. 射频磁控溅射法制备SnS2薄膜结构和光学特性的研究[J]. 发光学报, 2016,37(12): 1521-1531 DOI： 10.3788/fgxb20163712.1521.

LI Xue-liu, LIU Dan-dan, LIANG Qi etc. Structural and Optical Properties of SnS2 Films Prepared by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2016,37(12): 1521-1531 DOI： 10.3788/fgxb20163712.1521.

摘要

采用射频磁控溅射法溅射SnS

靶，在玻璃基片上以不同射频功率和氩气压强制备一系列薄膜样品，研究了不同工艺条件对薄膜特性的影响。利用X射线衍射（XRD）和拉曼光谱（Raman）对薄膜样品的晶体结构和物相进行表征分析。利用X射线能量色散谱（EDS）、紫外-可见-近红外分光光度计（UV-Vis-NIR）对SnS

薄膜的化学组分、光学特性等进行测试，计算或分析了SnS

薄膜样品的组分原子比、光学常数和光学带隙。结果表明：制备SnS

薄膜的最佳工艺条件为射频功率60 W、氩气压强0.5 Pa。在该条件下，所制备的SnS

薄膜沿（001）晶面择优取向生长，可见光透过率和折射率较高，消光系数较小，直接带隙为2.81 eV。在此基础上，进一步制备了n-SnS

/p-Si异质结器件。器件具有良好的整流特性及弱光伏特性，反向光电流随光照强度的增加而增大。器件的光电导机制是由SnS

禁带中陷阱中心的指数分布所控制。

Abstract

A series of SnS

thin films were deposited on glass substrates by RF magnetron sputtering a SnS

target. The effects of the preparation conditions on the properties of the films were studied. The crystal and phase structure of the thin films were investigated by X-ray diffraction and laser Raman spectroscopy. The chemical composition

optical properties of the SnS

thin films were characterized by energy disperse X-ray spectroscopy

ultraviolet-visible-near infrared spectrophotometry (UV-Vis-NIR). The atomic ratio

optical constants and bandgap of SnS

thin film were calculated and analyzed. The results show that the optimal condition for SnS

thin films is the sputtering power of 60 W and argon pressure of 0.5 Pa. The film is aligned along (001) preferred orientation

the transmittance and refractive index are high in the visible region

the extinction coefficient is small

and the direct bandgap is 2.81 eV. The n-SnS

/p-Si heterojuction devices were fabricated. The devices exhibit good rectifying behaviors and weak photovoltaic properties. The photocurrent under the reverse bias voltage is increased with the increasing of illumination intensity. The photoconducting mechanism of the devices is controlled by the presence of exponential distribution of trap centers in the forbidden band of SnS

关键词

SnS2薄膜射频磁控溅射光学特性异质结器件

Keywords

SnS2 thin filmsRF magnetron sputteringoptical propertiesheterojunction device

references

LUCENA R, FRESNO F, CONESA J C. Hydrothermally synthesized nanocrystalline tin disulphide as visible light-active photocatalyst:spectral response and stability[J]. Appl. Catal. A:Gen., 2012, 415-416:111-117.

GOU X L, CHEN J, SHEN P W. Synthesis, characterization and application of SnSx (x=1, 2) nanoparticles[J]. Mater. Chem. Phys., 2005, 93(2-3):557-566.

ZHANG Y D, ZHU P Y, HUANG L L, et al.. Few-layered SnS2 on few-layered reduced graphene oxide as Na-ion battery anode with ultralong cycle life and superior rate capability[J]. Adv. Funct. Mater., 2015, 25(3):481-489.

JOSHI P D, JOAG D S, ROUT C S, et al.. Photosensitive field emission study of SnS2 nanosheets[C]. Proceedings of The 201427th International Vacuum Nanoelectronics Conference, Engelberg, Switzerland, 2014:241-242.

XIA J, ZHU D D, WANG L, et al.. Large-scale growth of two-dimensional SnS2 crystals driven by screw dislocations and application to photodetectors[J]. Adv. Funct. Mater., 2015, 25(27):4255-4261.

SU G X, HADJIEV V G, LOYA P E, et al.. Chemical vapor deposition of thin crystals of layered semiconductor SnS2 for fast photodetection application[J]. Nano Lett., 2015, 15(1):506-513.

PANDA S K, ANTONAKOS A, LIAROKAPIS E, et al.. Optical properties of nanocrystalline SnS2 thin films[J]. Mater. Res. Bull., 2007, 42(3):576-583.

JIANG T, OZIN G A. New directions in tin sulfide materials chemistry[J]. J. Mater. Chem., 1998, 8(5):1099-1108.

DOMINGO G, ITOGA R S, KANNEWURF C R. Fundamental optical absorption in SnS2 and SnSe2[J]. Phys. Rev., 1966, 143(2):536-541.

TAN F R, QU S C, ZENG X B, et al.. Photovoltaic effect of tin disulfide with nanocrystalline/amorphous blended phases[J]. Solid State Commun., 2010, 150(1-2):58-61.

KIRUTHIGAA G, MANOHARAN C, RAJU C, et al.. Solid state synthesis and spectral investigations of nanostructure SnS2[J]. Spectroch. Acta Part A:Mol. Biomol. Spectrosc., 2014, 129:415-420.

SREEDEVI G, REDDY K T R. Dependence of optical properties of chemical bath deposited SnS2films on deposition time[C]. Proceedings of The 57th DAE Solid State Physics Symposium 2012, Bombay, Mumbai, India, 2012:688-689.

SHI C W, YANG P F, YAO M, et al.. Preparation of SnS2 thin films by close-spaced sublimation at different source temperatures[J]. Thin Solid Films, 2013, 534:28-31.

SHI C W, CHEN Z, SHI G Y, et al.. Influence of annealing on characteristics of tin disulfide thin films by vacuum thermal evaporation[J]. Thin Solid Films, 2012, 520(15):4898-4901.

YASSIN O A, ABDELAZIZ A A, JABER A Y. Structural and optical characterization of V-and W-doped SnS2 thin films prepared by spray pyrolysis[J]. Mater. Sci. Semicond. Proc., 2015, 38:81-86.

?I?ICA T, S?RI?K L, DOSTL L, et al.. SnS and SnS2 thin films deposited using a spin-coating technique from intramolecularly coordinated organotin sulfides[J]. Appl. Organomet. Chem., 2015, 29(3):176-180.

SCHLAF R, LOUDER D, LANG O, et al.. Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors:reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization[J]. J. Vac. Sci. Technol. A, 1995, 13(3):1761-1767.

BANAI R E, LEE H, MOTYKA M A, et al.. Optical properties of sputtered SnS thin films for photovoltaic absorbers[J]. IEEE J. Photovolt., 2013, 3(3):1084-1089.

BODEUX R, LEGUAY J, DELBOS S. Influence of composition and annealing on the characteristics of Cu2SnS3, thin films grown by cosputtering at room temperature[J]. Thin Solid Films, 2015, 582:229-232.

KUSANO E, SAKAMOTO M A. Control of composition and properties by the use of reflector wall in RF sputter deposition of Cu2ZnSnS4, thin films[J]. Thin Solid Films, 2015, 589:433-440.

MATHEWS N R, GARCA C C, TORRES I Z. Effect of annealing on structural, optical and electrical properties of pulse electrodeposited tin sulfide films[J]. Mater. Sci. Semicond. Proc., 2013, 16(1):29-37.

SMITH A J, MEEK P E, LIANG W Y. Raman scattering studies of SnS2 and SnSe2[J]. J. Phys. C:Solid State Phys., 1977, 10(8):1321-1323.

NIKOLIC P M, MIHAJLOVIC P, LAVRENCIC B. Splitting and coupling of lattice modes in the layer compound SnS[J]. J. Phys. C:Solid State Phys., 1977, 10(11):L289-L292.

SOHILA S, RAJALAKSHMI M, GHOSH C, et al.. Optical and Raman scattering studies on SnS nanoparticles[J]. J. Alloys Compd., 2011, 509(19):5843-5847.

KUMAR K S, MANOHARAN C, AMALRAJ L, et al.. Spray deposition and characterization of undoped and In-doped tin disulphide thin films[J]. Cryst. Res. Technol., 2012, 47(7):771-779.

SNCHEZ-JUREZ A, TIBURCIO-SILVER A, ORTIZ A. Fabrication of SnS2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition[J]. Thin Solid Films, 2005, 480-481:452-456.

RAY S C, KARANJAI M K, DASGUPTA D. Structure and photoconductive properties of dip-deposited SnS and SnS2 thin films and their conversion to tin dioxide by annealing in air[J]. Thin Solid Films, 1999, 350(1-2):72-78.

CHENG L L, LIU M H, WANG S C, et al.. Nano-flower and nano-wall SnS2 films fabricated with controllable shape and size by the PECVD method[J]. Semicond. Sci. Technol., 2013, 28(1):015020.

ETEFAGH R, SHAHTAHMASSEBI N, BENAM M R, et al.. Effect of Zn-doping on absorption coefficient and photo-conductivity of SnS2 thin films deposited by spray pyrolysis technique[J]. Indian J. Phys., 2014, 88(6):563-570.

YAHIA I S, FARAG A A M, CAVAS M, et al.. Effects of stabilizer ratio on the optical constants and optical dispersion parameters of ZnO nano-fiber thin films[J]. Superlattices Microstruct., 2013, 53:63-75.

SELIM M S, GOUDA M E, EL-SHAARAWY M G, et al.. Effect of thickness on optical properties of thermally evaporated SnS films[J]. Thin Solid Films, 2013, 527:164-169.

ABDEL-GALIL A, BALBOUL M R, ATTA A, et al.. Preparation, structural and optical characterization of nanocrystalline CdS thin film[J]. Phys. B:Condens. Matter, 2014, 447:35-41.

BAKR N A, FUNDE A M, WAMAN V S, et al.. Determination of the optical parameters of a-Si:H thin films deposited by hot wire-chemical vapour deposition technique using transmission spectrum only[J]. Pramana, 2011, 76(3):519-531.

MERICHE F, TOUAM T, CHELOUCHE A, et al.. Post-annealing effects on the physical and optical waveguiding properties of RF sputtered ZnO thin films[J]. Electron. Mater. Lett., 2015, 11(5):862-870.

王晓阳,冯文然,周海,等. 磁控溅射PbSe薄膜厚度对其结构及光学特性的影响[J]. 人工晶体学报, 2014, 43(5):1105-1109. WANG X Y, FENG W R, ZHOU H, et al.. Effect of thickness on structure and optical properties of PbSe thin film deposited by magnetron sputtering[J]. J. Synth. Cryst., 2014, 43(5):1105-1109. (in Chinese)

ARIVAZHAGAN V, PARVATHI M M, RAJESH S. Impact of thickness on vacuum deposited PbSe thin films[J]. Vacuum, 2012, 86(8):1092-1096.

VENKATACHALAM S, JEYACHANDRAN Y L, SURESHKUMAR P, et al.. Characterization of vacuum-evaporated ZnSe thin films[J]. Mater. Charact., 2007, 58(8-9):794-799.

GUPTA R K, YAKUPHANOGLU F. Photoconductive Schottky diode based on Al/p-Si/SnS2/Ag for optical sensor applications[J]. Sol. Energy, 2012, 86(5):1539-1545.

AHN J H, LEE M J, HEO H, et al.. Deterministic two-dimensional polymorphism growth of hexagonal n-type SnS2 and orthorhombic p-type SnS crystals[J]. Nano Lett., 2015, 15(6):3703-3708.

ZHU R J, ZHANG X A, ZHAO J W, et al.. Influence of illumination intensity on the electrical characteristics and photoresponsivity of the Ag/ZnO Schottky diodes[J]. J.Alloys Compd., 2015, 631:125-128.

CHEBIL W, FOUZRI A, FARGI A, et al.. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method[J]. Mater. Res. Bull., 2015, 70:719-727.

YAKUPHANOGLU F. Electrical and photovoltaic properties of cobalt doped zinc oxide nanofiber/n-silicon diode[J]. J. Alloys Compd., 2010, 494(1-2):451-455.

YAKUPHANOGLU F, FAROOQ W A. Photoresponse and electrical characterization of photodiode based nanofibers ZnO and Si[J]. Mater. Sci. Semicond. Proc., 2011, 14(3-4):207-211.

GHOSH B, ROY R, CHOWDHURY S, et al.. Synthesis of SnS thin films via galvanostatic electrodeposition and fabrication of CdS/SnS heterostructure for photovoltaic applications[J]. Appl. Surf. Sci., 2010, 256(13):4328-4333.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

射频磁控溅射法制备SnS薄膜及其结构和光学特性

高真空磁控溅射温度对Ga₂O₃微观结构及光学性能的影响

退火温度对旋涂法制备SnO₂薄膜性能的影响

磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究

氮掺铟锡锌薄膜晶体管的制备及其光电特性