基于低维相变薄膜的显示器件光学性质的研究

牛萍娟; 薛卫芳; 宁平凡; 刘宏伟; 杨洁; 张浩伟; 赵金萍; 崔贺凤

doi:10.3788/fgxb20163712.1514

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基于低维相变薄膜的显示器件光学性质的研究

器件制备及器件物理 | 更新时间：2020-08-12

- 基于低维相变薄膜的显示器件光学性质的研究
- Optical Properties of Display Devices Enabled by Low-dimensional Phase-change Thin Films
- 发光学报 2016年37卷第12期页码：1514-1520
- 作者机构：
  
  1. 天津工业大学电气工程与自动化学院天津,300387
  2. 天津工业大学电子与信息工程学院天津,300387
  3. 天津工业大学大功率半导体照明应用系统教育部工程研究中心天津,300387
- 作者简介：
- 基金信息：
  
  天津市自然科学基金（15JCQNJC41800，14JCQNJC01000）();国家自然科学基金（11404239）();国家科技支撑计划（2014BAH03F01）
- DOI：10.3788/fgxb20163712.1514
  中图分类号： TH37
- 纸质出版日期：2016-12-10，
  
  收稿日期：2016-5-23，
  
  修回日期：2016-6-26，
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牛萍娟, 薛卫芳, 宁平凡等. 基于低维相变薄膜的显示器件光学性质的研究[J]. 发光学报, 2016,37(12): 1514-1520

NIU Ping-juan, XUE Wei-fang, NING Ping-fan etc. Optical Properties of Display Devices Enabled by Low-dimensional Phase-change Thin Films[J]. Chinese Journal of Luminescence, 2016,37(12): 1514-1520
牛萍娟, 薛卫芳, 宁平凡等. 基于低维相变薄膜的显示器件光学性质的研究[J]. 发光学报, 2016,37(12): 1514-1520 DOI： 10.3788/fgxb20163712.1514.

NIU Ping-juan, XUE Wei-fang, NING Ping-fan etc. Optical Properties of Display Devices Enabled by Low-dimensional Phase-change Thin Films[J]. Chinese Journal of Luminescence, 2016,37(12): 1514-1520 DOI： 10.3788/fgxb20163712.1514.

摘要

采用传输矩阵模型研究了基于低维相变薄膜的显示器件的光学特性与器件结构的关系。显示器件的类型有反射型和透射型，器件结构的关键参数包括Ge

（GST）层的厚度、ITO层的厚度、GST层的晶态与非晶态的变化。结果表明：对于反射型器件，ITO层的厚度对器件的反射光谱影响较大，可以通过改变ITO层的厚度达到改变器件颜色的效果；GST层的厚度为12 nm时，GST的晶态与非晶态的变化使器件有最好的颜色对比度且消耗较低的电功率。对于透射型器件，通过使用超薄的GST薄膜，器件的透明度可以保持很高，器件的透明度在GST的厚度超过几纳米后迅速下降。

Abstract

The transfer matrix calculation model was used to study a unique display device employing low-dimensional phase-change thin film (PCMs). The optical properties of the device based on the germanium antimony tellurium alloy Ge

(GST) thin films were studied by simulation. It was showed how such a system

when combined with a transparent electrode such as indium tin oxide (ITO)

could be used as displays on reflective and transparent substrates both on rigid and flexible surfaces. To understand the relationship between the thickness of ITO and GST layers and the overall optical properties of the stack

the reflectivity spectrum of the stack was systematically computed while the thickness of each layer was gradually increased. For the reflection type device

the thickness of ITO has great influence on the reflection spectrum of the device

and the color of the device can be changed by changing the thickness of ITO. When the thickness of GST is 12 nm

the color contrast of the device is the best which is achieved by changing the phase of GST between amorphous and crystalline

and the power consumption is low. For the transmission type device

the transparency of the device can be very high by using ultra-thin GST film

but the transparency declines rapidly when the thickness of GST is more than a few nanometers.

关键词

传输矩阵相变薄膜显示器件颜色对比度

Keywords

transfer matrixphase-change thin filmdisplay devicecolor contrast

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