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北京工业大学 激光工程研究院 北京,100124
纸质出版日期:2016-12-10,
收稿日期:2016-6-3,
修回日期:2016-7-28,
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李景, 邱运涛, 曹银花等. 锥形半导体激光芯片的光刻工艺研究[J]. 发光学报, 2016,37(12): 1502-1506
LI Jing, QIU Yun-tao, CAO Yin-hua etc. Photoetching of Tapered Diode Laser Wafer[J]. Chinese Journal of Luminescence, 2016,37(12): 1502-1506
李景, 邱运涛, 曹银花等. 锥形半导体激光芯片的光刻工艺研究[J]. 发光学报, 2016,37(12): 1502-1506 DOI: 10.3788/fgxb20163712.1502.
LI Jing, QIU Yun-tao, CAO Yin-hua etc. Photoetching of Tapered Diode Laser Wafer[J]. Chinese Journal of Luminescence, 2016,37(12): 1502-1506 DOI: 10.3788/fgxb20163712.1502.
针对锥形半导体激光器中的脊形波导区宽度较小的问题,对半导体激光芯片制造中的刻蚀标记及刻蚀方法进行了研究。提出对于锥形半导体刻蚀中的脊型区域和锥形区域,采用不同精度的双标记刻蚀方法,细化对脊形波导和锥形波导的刻蚀中的对准问题,并使光刻标在不同的光刻版上相错位排列,在相应光刻版中相互遮挡,反复刻蚀中保证相应的光刻标清晰、完整。刻蚀后的芯片在电流为7 A时获得了中心波长963 nm、连续功率4.026 W、慢轴方向和快轴方向激光光束参数乘积分别为1.593 mmmrad和0.668 mmmrad的激光输出。
For the very narrow ridge waveguide width
the etching marks and etching methods in the manufacturing of the semiconductor tapered laser chip were studied in this paper. The double photolithography alignment mark using two different precisions for the ridge area and the tapered area was proposed to refine the alignment in the etching of ridge waveguide and tapered waveguide. The photolithography alignment marks were arranged in different place in different photolithography figure
and they interacted each other in order to keep the photolithography alignment marks clear and complete in repeated etching. By using this method
the etched chip delivers 4.026 W CW output at 7 A current with the center wavelength of 963 nm
and the slow and fast direction beam quality is 1.593 mmmrad and 0.668 mmmrad
respectively.
锥形半导体激光器脊形波导光刻标芯片刻蚀
tapered diode laserridge waveguidephotolithography alignment markswafer photoetching
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