氧化硅薄膜中掺杂Tb3+离子的发光敏化

刘金金; 徐明祥

doi:10.3788/fgxb20163712.1464

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氧化硅薄膜中掺杂Tb³⁺离子的发光敏化

材料合成及性能 | 更新时间：2020-08-12

- 氧化硅薄膜中掺杂Tb³⁺离子的发光敏化
- Photoluminescence of SiO₂ Thin Films Doped by Tb³⁺
- 发光学报 2016年37卷第12期页码：1464-1470
- 作者机构：
  
  东南大学物理系, 江苏南京 211189
- 作者简介：
- 基金信息：
  
  江苏省自然科学基金（BK20141337）资助项目()
- DOI：10.3788/fgxb20163712.1464
  中图分类号： O473;O482.31
- 纸质出版日期：2016-12-10，
  
  收稿日期：2016-7-24，
  
  修回日期：2016-8-21，
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刘金金, 徐明祥,. 氧化硅薄膜中掺杂Tb3+离子的发光敏化[J]. 发光学报, 2016,37(12): 1464-1470

LIU Jin-jin, XU Ming-xiang,. Photoluminescence of SiO2 Thin Films Doped by Tb3+[J]. Chinese Journal of Luminescence, 2016,37(12): 1464-1470
刘金金, 徐明祥,. 氧化硅薄膜中掺杂Tb3+离子的发光敏化[J]. 发光学报, 2016,37(12): 1464-1470 DOI： 10.3788/fgxb20163712.1464.

LIU Jin-jin, XU Ming-xiang,. Photoluminescence of SiO2 Thin Films Doped by Tb3+[J]. Chinese Journal of Luminescence, 2016,37(12): 1464-1470 DOI： 10.3788/fgxb20163712.1464.

摘要

采用溶胶-凝胶法在硅片上制备了掺杂稀土离子Tb

的SiO

薄膜，并用荧光分析方法研究了薄膜的发光特性，对发光效果的提升途径做了探索和分析。在245 nm波长的激发下，能够观察到Tb

的

（

=6，5，4，3）的跃迁发射峰。对于Tb

离子的高浓度掺杂体系，在掺入富Si或Al

离子后，浓度猝灭效应能得到明显改善。同时掺入两种激活剂的样品发光强度较只掺Al

的样品大了近一倍。此外，氩气氛退火引入氧空位缺陷也能使样品的发光强度有较大提升，氩气氛退火的最佳温度为1 200℃。

Abstract

SiO

:Tb

films were prepared on silicon chips by sol-gel method. The photoluminescence characterizations of the films were studied by fluorescence analysis

and the ways to improve the luminescence were explored and analyzed. Excited by 245 nm

the peaks of transition emissions of

(

3) of Tb

can be observed. The concentration quenching effect of the system with high concentration doping of Tb

ions

can be significantly improved after the co-doping of Si or Al

. The luminescence intensity of the sample doped by Si and Al

is twice as that of Al

-doped sample. In addition

the oxygen vacancy defect introduced by annealing under Ar atmosphere can make the system get significantly enhanced emissions

and the best annealing temperature is 1 200℃.

关键词

Tb3+硅基材料荧光分析法溶胶凝胶法

Keywords

Tb3+ ionsilicon-based materialfluorescence analysissol-gel method

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