GaInAsP/InP阶梯量子阱中电子-电子的散射率

王海龙; 李正; 胡敏; 李士玲; 龚谦

doi:10.3788/fgxb20163711.1408

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GaInAsP/InP阶梯量子阱中电子-电子的散射率

器件制备及器件物理 | 更新时间：2020-08-12

- GaInAsP/InP阶梯量子阱中电子-电子的散射率
- Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well
- 发光学报 2016年37卷第11期页码：1408-1414
- 作者机构：
  
  1. 山东省激光偏光与信息技术重点实验室, 曲阜师范大学物理工程学院, 山东曲阜 273165
  2. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61176065，61205055）();山东省自然科学基金（ZR2014FM011）();信息功能材料国家重点实验开放课题（SKL201307）资助
- DOI：10.3788/fgxb20163711.1408
  中图分类号： O471.1
- 纸质出版日期：2016-11-5，
  
  收稿日期：2016-7-6，
  
  修回日期：2016-8-17，
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王海龙, 李正, 胡敏等. GaInAsP/InP阶梯量子阱中电子-电子的散射率[J]. 发光学报, 2016,37(11): 1408-1414

WANG Hai-long, LI Zheng, HU Min etc. Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well[J]. Chinese Journal of Luminescence, 2016,37(11): 1408-1414
王海龙, 李正, 胡敏等. GaInAsP/InP阶梯量子阱中电子-电子的散射率[J]. 发光学报, 2016,37(11): 1408-1414 DOI： 10.3788/fgxb20163711.1408.

WANG Hai-long, LI Zheng, HU Min etc. Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well[J]. Chinese Journal of Luminescence, 2016,37(11): 1408-1414 DOI： 10.3788/fgxb20163711.1408.

摘要

在有效质量近似下，利用打靶法和费米黄金定则计算出Ga

/InP阶梯量子阱中两个及多个电子从第一激发态子带到基态子带的散射率及平均散射率。计算结果表明，电子-电子的散射率和平均散射率随Ga组分和阱宽的增大而升高，随As组分的增大而降低。散射率随电子初态能和外加电场强度的增大而降低，平均散射率随载流子浓度的增大而升高。电子温度对平均散射率的影响不明显，平均散射率随着电子温度的升高而稍微降低。

Abstract

Within the framework of effective mass approximation

the scattering rate and the mean scattering rate for two electrons and multiple electrons initially in the first excited subband and finally in the ground subband in Ga

/InP stepped quantum well were calculated adopting the shooting method and Fermi's golden rule. The results show that the electron-electron scattering rate and the mean scattering rate increase with the increasing of Ga composition and well width

decrease with the increasing of As composition. The scattering rate decreases with the increasing of initial electron energy and intensity of applied electric field. The mean scattering rate increases with the increasing of carrier density. The electron temperature does not have great influence on the mean scattering rate

the mean scattering rate decreases slightly as the electron temperature rises. The calculated results can provide theory basis and guiding significance for the design of optoelectronic devices based on stepped quantum well and GaInAsP/InP material.

关键词

GaxIn1-xAsyP1-y/InP阶梯量子阱电子费米黄金定则散射率

Keywords

GaxIn1-xAsyP1-y/InPstepped quantum wellelectronFermi's golden rulescattering rate

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