室温生长AZO/Al2O3叠层薄膜晶体管性能研究

宁洪龙; 曾勇; 姚日晖; 刘贤哲; 陶瑞强; 郑泽科; 方志强; 胡诗犇; 陈建秋; 蔡炜; 徐苗; 兰林锋; 王磊; 彭俊彪; 李正操

doi:10.3788/fgxb20163711.1372

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室温生长AZO/Al₂O₃叠层薄膜晶体管性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- 室温生长AZO/Al₂O₃叠层薄膜晶体管性能研究
- Properties of AZO/Al₂O₃ Stacked Thin Film Transistors Prepared at Room Temperature
- 发光学报 2016年37卷第11期页码：1372-1377
- 作者机构：
  
  1. 华南理工大学材料科学与工程学院, 高分子光电材料与器件研究所, 发光材料与器件国家重点实验室, 广东广州 510640
  2. 新型陶瓷与精细工艺国家重点实验室(清华大学), 北京 100084
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展计划（973）（2015CB655004）();国家重点研发计划（2016YFB0401504，2016YFF0203603）();广东省自然科学基
- DOI：10.3788/fgxb20163711.1372
  中图分类号： TN321+.5
- 纸质出版日期：2016-11-5，
  
  收稿日期：2016-5-26，
  
  修回日期：2016-8-29，
扫描看全文
宁洪龙, 曾勇, 姚日晖等. 室温生长AZO/Al2O3叠层薄膜晶体管性能研究[J]. 发光学报, 2016,37(11): 1372-1377

NING Hong-long, ZENG Yong, YAO Ri-hui etc. Properties of AZO/Al2O3 Stacked Thin Film Transistors Prepared at Room Temperature[J]. Chinese Journal of Luminescence, 2016,37(11): 1372-1377
宁洪龙, 曾勇, 姚日晖等. 室温生长AZO/Al2O3叠层薄膜晶体管性能研究[J]. 发光学报, 2016,37(11): 1372-1377 DOI： 10.3788/fgxb20163711.1372.

NING Hong-long, ZENG Yong, YAO Ri-hui etc. Properties of AZO/Al2O3 Stacked Thin Film Transistors Prepared at Room Temperature[J]. Chinese Journal of Luminescence, 2016,37(11): 1372-1377 DOI： 10.3788/fgxb20163711.1372.

摘要

针对目前大多数氧化物薄膜晶体管都需要采用热退火工艺来提高其性能不利于其在柔性显示器件中应用这一问题，提出了一种采用室温工艺制备的新型TFT器件，无需退火处理即可获得较好的器件性能。该器件采用脉冲激光沉积技术制备的AZO/Al

叠层结构作为沟道层。与单层AZO-TFT器件相比，叠层TFT器件具有更优异的性能，其迁移率为2.27cm

-1

，开关比为1.4310

。通过对AZO/Al

叠层薄膜的厚度、密度、粗糙度、物相、界面特性及能带结构等进行分析，发现这种叠层结构能够使电子的运动被限制在AZO薄膜平面内，即形成了二维电子传输，从而提升TFT器件的性能。

Abstract

Most of the oxide thin film transistor (TFT) need thermal annealing process to improve its performance

which is detrimental to their applications in the flexible display devices. Concerning this problem

a new TFT structure with room temperature process was presented

which has good performance without annealing treatment. AZO/Al

stacked thin film was prepared by pulsed laser deposition as a channel layer. The stacked TFT showed better performance than single-layer AZO-TFT. The field effect mobility and on/off current ratio were 2.27 cm

-1

and 1.4310

. By analyzing the thickness

density

roughness

phase and band structure of AZO/Al

stacked thin film

it is found that the electrons can be confined in the potential well of AZO

which forms a two-dimensional electron transport to improve the performance of TFT device.

关键词

叠层薄膜晶体管室温工艺二维电子传输

Keywords

stacked thin film transistorroom temperature processtwo-dimensional electron transport

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