二次耦合直流输出的金属氧化物TFT行驱动电路

胡宇峰; 李冠明; 吴为敬; 徐苗; 王磊; 彭俊彪

doi:10.3788/fgxb20163710.1223

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二次耦合直流输出的金属氧化物TFT行驱动电路

器件制备及器件物理 | 更新时间：2020-08-12

- 二次耦合直流输出的金属氧化物TFT行驱动电路
- Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module
- 发光学报 2016年37卷第10期页码：1223-1229
- 作者机构：
  
  1. 华南理工大学电子与信息学院,广东广州,510641
  2. 华南理工大学发光材料与器件国家重点实验室, 广东广州 510641
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61574062，61574061）();广东省科技计划项目（2015B090914003，2014B090916002，2016B090906002
- DOI：10.3788/fgxb20163710.1223
  中图分类号： TP394.1;TH691.9
- 纸质出版日期：2016-10-5，
  
  收稿日期：2016-5-1，
  
  修回日期：2016-5-24，
扫描看全文
胡宇峰, 李冠明, 吴为敬等. 二次耦合直流输出的金属氧化物TFT行驱动电路[J]. 发光学报, 2016,37(10): 1223-1229

HU Yu-feng, LI Guan-ming, WU Wei-jing etc. Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module[J]. Chinese Journal of Luminescence, 2016,37(10): 1223-1229
胡宇峰, 李冠明, 吴为敬等. 二次耦合直流输出的金属氧化物TFT行驱动电路[J]. 发光学报, 2016,37(10): 1223-1229 DOI： 10.3788/fgxb20163710.1223.

HU Yu-feng, LI Guan-ming, WU Wei-jing etc. Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module[J]. Chinese Journal of Luminescence, 2016,37(10): 1223-1229 DOI： 10.3788/fgxb20163710.1223.

摘要

为了弥补现有氧化物TFT的行驱动电路输出模块在功率消耗、响应速度、输出摆幅等方面的不足，提出了基于二次耦合的直流输出模块，并由此研究设计新的行驱动电路拓扑。仿真结果表明，该输出模块具有驱动能力强、响应速度快等优点。最后，基于刻蚀阻挡层（ESL）结构的氧化物TFT工艺，在玻璃衬底上成功制备了该行驱动电路，实测单级功耗为325 W。

Abstract

The gate driver integrated by metal oxide thin film transistors is able to lower the cost of driving ICs and narrow the bezel of display panel

but there are some disadvantages like poor power efficiency

slow response speed and small output swing for the existing output modules. In order to solve these problems

a novel twice-bootstrap DC output module was proposed

and a new gate driver topology was designed based on this module. The simulation results show that the circuit has strong driving ability and fast response speed. Finally

the gate drivers were successfully fabricated on glass substrate integrated by MOTFTs with etch stop layer structure. The power consumption of single stage of the gate driver is 325 W.

关键词

行驱动电路氧化铟锌薄膜晶体管耦合效应

Keywords

gate driver circuitIZO thin film transistorbootstrapping effect

references

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