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1. 中国电子科技集团公司 第三十八研究所,安徽 合肥,230088
2. 固体微结构物理国家重点实验室, 江苏 南京 210093
3. 郑州轻工业学院 电气信息工程学院,河南 郑州,450002
纸质出版日期:2016-10-5,
收稿日期:2016-4-22,
修回日期:2016-7-9,
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李悰, 张培, 姜利英等. nc-Ge/SiN<sub><em>x</em></sub>多层膜材料的可调控非线性光学特性[J]. 发光学报, 2016,37(10): 1217-1222
LI Cong, ZHANG Pei, JIANG Li-ying etc. Tunable Nonlinear Optical Properties of nc-Ge/SiN<sub><em>x</em></sub> Multilayers[J]. Chinese Journal of Luminescence, 2016,37(10): 1217-1222
李悰, 张培, 姜利英等. nc-Ge/SiN<sub><em>x</em></sub>多层膜材料的可调控非线性光学特性[J]. 发光学报, 2016,37(10): 1217-1222 DOI: 10.3788/fgxb20163710.1217.
LI Cong, ZHANG Pei, JIANG Li-ying etc. Tunable Nonlinear Optical Properties of nc-Ge/SiN<sub><em>x</em></sub> Multilayers[J]. Chinese Journal of Luminescence, 2016,37(10): 1217-1222 DOI: 10.3788/fgxb20163710.1217.
采用等离子体增强化学气相沉积和后退火的方法制备了纳米锗/氮化硅(nc-Ge/SiN
x
)多层薄膜。借助Raman光谱仪对其微结构进行表征,测得样品的晶化率大于46%。由样品的光吸收谱可知,nc-Ge的尺寸越小,其光学带隙越大。利用Z扫描技术对样品的非线性光学特性进行研究,以波长为1 064 nm、脉宽为25 ps的锁模激光作为激发光,测得样品的非线性折射率系数在10
-10
cm
2
/W数量级。实验结果表明,通过改变nc-Ge的尺寸可以使材料的非线性光学折射率由自散焦转变为自聚焦特性,而负的非线性折射率系数可归因于两步吸收产生的自由载流子散射效应。当激发光强增大时,在锗层厚度为6 nm的多层膜中同时存在两步吸收过程和饱和吸收过程。两种非线性光学吸收过程之间的竞争是样品呈现不同非线性光学特性的主要原因。
Nanocrystalline Ge (nc-Ge)/SiN
x
multilayers were fabricated by plasma enhanced chemical vapor deposition technique and post-thermal annealing method. The microstructure was characterized through Raman spectroscopy
and the calculated crystallinity was higher than 46%. The optical absorption spectra reveal that the band gap enlarges as the grain size of nc-Ge decreases. The nonlinear optical properties of nc-Ge/SiN
x
multilayers were investigated through Z-scan technique by using a mode-locking laser with 25 ps pulse duration at 1 064 nm as the pump laser. The measured nonlinear refractive coefficient was about 10
-10
cm
2
/W. It is interesting to found the nonlinear optical refraction changes from the self-defocusing to self-focusing with the increasing of the grain size of nc-Ge
and the negative nonlinear refractive coefficient can be attributed to the free carries dispersion generated by tow-step absorption process. Moreover
two-step absorption and saturation absorption process coexist in the multilayers with 6 nm Ge layer as the pump intensity increases. The different optical nonlinearities are mainly originated from the competition between the two nonlinear absorption processes.
nc-Ge/SiNx多层膜饱和吸收两步吸收过程自由载流子散射
nc-Ge/SiNx multilayerssaturable absorptiontwo-step absorption processfree carries dispersion
MARTINEZ A, BLASCO J, SANCHIS P, et al.. Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths [J]. Nano Lett., 2010, 10(4):1506-1511.
RUKHLENKO I D, KALAVALLY V. Raman amplification in silicon-nanocrystal waveguides [J]. J. Lightwave Technol., 2014, 32(1):130-134.
刘石勇,李旺,牛新伟,等. 非晶硅锗薄膜与太阳能电池研究 [J]. 人工晶体学报, 2014, 43(4):765-770. LIU S Y,LI W,NIU X W, et al.. Study on amorphous silicon germanium( a-SiGe) thin films and solar cells [J]. J. Synth. Cryst., 2014, 43(4):765-770. (in Chinese)
ETTABIB M, KAPSALIS A, BOGRIS A, et al.. Polarization insensitive wavelength conversion in a dispersion-engineered SiGe waveguide [J]. IEEE Photon. Technol. Lett., 2016:1-1.
LI H P, KAM C H, LAM Y L, et al.. Nonlinear optical response of Ge nanocrystals in silica matrix with excitation of femtosecond pulses [J]. Appl. Phys. B: Lasers Opt., 2001, 72(5):611-615.
LI C, XU J, XU L, et al.. Optical absorption and charging effect in nano-crystalline Ge/SiNx multilayers [J]. Appl. Surf. Sci., 2013, 269:129-133.
LI C, XU J, LI W, et al.. Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiNx multilayers [J]. Chin. Phys. B, 2013, 22(10):107201.
LI C, XU J, LI W, et al.. Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature [J]. J. Vac. Sci. Technol. B, 2012, 30(5):051201.
李悰,徐骏,林涛,等. 超薄氢化非晶锗膜的结构与光电性质 [J]. 发光学报, 2011, 32(11):1165-1170. LI C, XU J, LIN T, et al.. Structural, electronic and optical properties of ultra-thin hydrogenated amorphous germanium films [J]. Chin. J. Lumin., 2011, 32(11):1165-1170. (in Chinese)
POULSEN P R, WANG M, XU J, et al.. Role of hydrogen surface coverage during anodic plasma deposition of hydrogenated nanocrystalline germanium [J]. J. Appl. Phys., 1998, 84:3386-3391.
TAUC J, GRIGOROVICI R, VANCU A. Optical properties and electronic structure of amorphous germanium [J]. Phys. Stat. Sol. (b), 1966, 15(2):627-637.
ZHENG D Q, SU W A, YE Q H, et al.. Controllable nonlinear refraction characteristics in hydrogenated nanocrystalline silicon [J]. J. Appl. Phys., 2014, 115(5):053510.
DOWD A, ELLIMAN R G, SAMOC M, et al.. Nonlinear optical response of Ge nanocrystals in a silica matrix [J]. Appl. Phys. Lett.,1999, 74(2):239-241.
JIE X, XIONG Y N, WEE A T S, et al.. Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix [J]. Appl. Phys. Lett., 2000, 77(24):3926-3928.
CHOI Y, PARK J H, KIM M R, et al.. Direct observation of self-focusing near the diffraction limit in polycrystalline silicon film [J]. Appl. Phys. Lett., 2001, 78(7):856-858.
SPANO R, DALDOSSO N, CAZZANELLI M, et al.. Bound electronic and free carrier nonlinearities in silicon nanocrystals at 1 550 nm [J]. Opt. Express, 2009, 17(5):3941-50.
GERUNG H, ZHAO Y, WANG L, et al.. Two-photon absorption of matrix-free Ge nanocrystals [J]. Appl. Phys. Lett., 2006, 89(11):111107.
SHEIK-BAHAE M, SAID A A, WEI T H, et al.. Sensitive measurement of optical nonlinearities using a single beam [J]. IEEE J Quant. Electron, 1990, 26:760-769.
王加贤,林正怀,张培,等. 纳米半导体复合薄膜的非线性光学性质及其在激光器中的应用 [J]. 光学 精密工程, 2013, 21(1):20-25. WANG J X, LIN Z H, ZHANG P, et al.. Nonlinear optical properties of nanometer semiconductor compound films and their applications to lasers [J]. Opt. Precision Eng., 2013, 21(1):20-25. (in Chinese)
ZHANG P, ZHANG X W, XU J, et al.. Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation [J]. Nanoscale Res. Lett., 2014, 9(1):1-6.
ZHANG P, ZHANG X W, LU P, et al.. Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers [J]. Appl. Surf. Sci., 2014, 292:262-266.
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