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1. 内蒙古工业大学 理学院,内蒙古 呼和浩特,010051
2. 上海海事大学 文理学院, 上海 201306
3. 乌兰察布广播电视台, 内蒙古 集宁,012000
纸质出版日期:2016-10-5,
收稿日期:2016-5-1,
修回日期:2016-8-17,
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温淑敏, 赵春旺, 王细军等. 硅基锗薄膜的红外吸收谱和电学特性[J]. 发光学报, 2016,37(10): 1177-1181
WEN Shu-min, ZHAO Chun-wang, WANG Xi-jun etc. Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films[J]. Chinese Journal of Luminescence, 2016,37(10): 1177-1181
温淑敏, 赵春旺, 王细军等. 硅基锗薄膜的红外吸收谱和电学特性[J]. 发光学报, 2016,37(10): 1177-1181 DOI: 10.3788/fgxb20163710.1177.
WEN Shu-min, ZHAO Chun-wang, WANG Xi-jun etc. Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films[J]. Chinese Journal of Luminescence, 2016,37(10): 1177-1181 DOI: 10.3788/fgxb20163710.1177.
为了解退火对硅基锗薄膜的质量、红外吸收、透射率和电学性质的影响,采用分子束外延方法用两步法在硅基上生长锗薄膜。将生长后的样品分成两部分,其中一部分进行了退火处理。对退火前后的样品用高分辨X射线双晶衍射仪测量了(400)晶面的X射线双晶衍射摇摆曲线,用傅里叶红外光谱仪测量了红外透射率和吸收谱,并用霍尔效应仪测量了退火前后样品的载流子浓度、迁移率、电阻率、电导率和霍尔系数。结果表明,退火后的薄膜质量明显提高。退火后大部分区域吸收增大,透射率明显减小,615~3 730 cm
-1
区间的透射率均比退火前降低了20%以上。退火后的体载流子浓度增大到退火前的23.26倍,迁移率增大到退火前的27.82倍。
In order to understand the influence of annealing on the epitaxial film quality and optoelectronic properties
an epitaxial Ge film was grown on a Si(001) substrate
via
the two-step process using molecular beam epitaxy technique. The sample was divided into two pieces
and one piece of the sample was annealed. X ray double crystal diffraction rocking curves of (400) crystal plane for non-annealed and annealed epitaxial Ge films were measured by the high resolution double-crystal X-ray diffractometer. Fourier transform infrared transmittance and absorption spectra for non-annealed and annealed epitaxial Ge films were measured by the Fourier transform infrared spectrometer. The carrier concentration
mobility
resistivity
conductivity
and Hall coefficient of non-annealed and annealed epitaxial Ge films were also measured using the Hall effect device. The results show that the anneal treatment can improve the quality of epitaxial Ge films significantly. The absorption rate increases after anneal treatment and the transmittance in most area of epitaxial Ge film decreases dramatically. The transmittance decreases by 20% in the range of 615 to 3 730 cm
-1
. The carrier concentration increases 22.26 times
and the carrier mobility increases 27.82 times after anneal treatment.
硅基锗薄膜红外吸收谱载流子浓度迁移率电导率
silicon based germanium thin filminfrared absorption spectrumcarrier concentrationmobilityconductivity
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KALEM S, WERNER P, TALALAEV V. Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment [J]. Appl. Phys. A, 2013, 112(3):561-567.
LI T W, ZHANG J J, CAO Y, et al.. Optical absorption enhancement of c-SiGe:H films deposited via high pressure and high power [J]. Optoelectron. Lett., 2014, 10(3):202-205.
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TSAO C Y, WONG J, HUANG J L, et al.. Structural dependence of electrical properties of Ge films prepared by RF magnetron sputtering[J]. Appl. Phys. A, 2011, 102(3):689-694.
刘石勇,李旺,牛新伟,等. 非晶硅锗薄膜与太阳能电池研究 [J]. 人工晶体学报, 2014, 43(4):765-770. LIU S Y,LI W,NIU X W,et al.. Study on amorphous silicon germanium(a-SiGe) thin films and solar cells [J]. J. Synth. Cryst., 2014, 43(4):765-770. (in Chinese)
LENG J, ZHAO L, JI Y Q. Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition [J]. Appl. Opt., 2014, 53(4):A48-A51.
SU S J, WANG W, CHENG B W, et al.. Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates [J]. J. Cryst. Growth, 2011, 317(1):43-46.
苏少坚,汪巍,张广泽,等. Si(001)衬底上分子束外延生长Ge0.975Sn0.025合金薄膜 [J]. 物理学报, 2011, 60(2):028101-1-5. SU S J, WANG W, ZHANG G Z, et al.. Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy [J]. Acta Phys. Sinica, 2011, 60(2):028101-1-5. (in Chinese)
朱南昌,李润身,陈京一,等. 外延层组分界面状况的X射线双晶衍射测定 [J]. 半导体学报, 1995, 16(1):42-47. ZHU N C, LI R S, CHEN J Y, et al.. Determination of composition and interface condition of epitaxial layer by X-ray double-crystal diffraction [J]. Chin. J. Semicond., 1995, 16(1):42-47. (in Chinese)
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