射频磁控溅射法制备SnS薄膜及其结构和光学特性

刘丹丹; 李学留; 李琳; 史成武; 梁齐

doi:10.3788/fgxb20163709.1114

您当前的位置：

首页 >

文章列表页 >

射频磁控溅射法制备SnS薄膜及其结构和光学特性

器件制备及器件物理 | 更新时间：2020-08-12

- 射频磁控溅射法制备SnS薄膜及其结构和光学特性
- Structural and Optical Properties of SnS Films Prepared by RF Magnetron Sputtering
- 发光学报 2016年37卷第9期页码：1114-1123
- 作者机构：
  
  1. 合肥工业大学电子科学与应用物理学院, 安徽合肥 230009
  2. 合肥工业大学化学与化工学院, 安徽合肥 230009
- 作者简介：
- 基金信息：
  
  国家自然科学基金（51272061）资助项目()
- DOI：10.3788/fgxb20163709.1114
  中图分类号： O484;TN304
- 纸质出版日期：2016-9-5，
  
  收稿日期：2016-5-1，
  
  修回日期：2016-6-6，
扫描看全文
刘丹丹, 李学留, 李琳等. 射频磁控溅射法制备SnS薄膜及其结构和光学特性[J]. 发光学报, 2016,37(9): 1114-1123

LIU Dan-dan, LI Xue-liu, LI Lin etc. Structural and Optical Properties of SnS Films Prepared by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2016,37(9): 1114-1123
刘丹丹, 李学留, 李琳等. 射频磁控溅射法制备SnS薄膜及其结构和光学特性[J]. 发光学报, 2016,37(9): 1114-1123 DOI： 10.3788/fgxb20163709.1114.

LIU Dan-dan, LI Xue-liu, LI Lin etc. Structural and Optical Properties of SnS Films Prepared by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2016,37(9): 1114-1123 DOI： 10.3788/fgxb20163709.1114.

摘要

利用射频磁控溅射法在玻璃衬底上沉积SnS薄膜并对其进行快速退火处理，利用X射线衍射（XRD）、拉曼光谱（Raman）、X射线能量色散谱（EDS）、原子力显微镜（AFM）和紫外-可见-近红外（UV-Vis-NIR）分光光度计研究了不同溅射功率（60～120 W）条件下制备的SnS薄膜的晶体结构、物相组成、化学组分、表面形貌以及有关光学特性。结果表明：经快速退火的薄膜均已结晶，提高溅射功率有利于改善薄膜的结晶质量、生长择优取向程度和化学配比，薄膜的平均颗粒尺寸呈增大趋势；溅射功率为100 W的薄膜样品的结晶质量和择优取向度高，薄膜应变最小，且为纯相SnS薄膜，Sn/S组分的量比为1：1.09，吸收系数达10

-1

量级，直接禁带宽度为1.54 eV。

Abstract

SnS thin films were prepared on glass substrates by RF magnetron sputtering technique and then were rapidly annealed. The crystalline structure

phase composition

chemical composition

surface morphology and relevant optical properties of SnS thin films grown under various sputtering power (60-120 W) are investigated by X-ray diffraction (XRD)

Raman spectroscopy (Raman)

energy dispersive X-ray spectroscopy (EDS)

atomic force microscopy (AFM) and ultraviolet-visible-near infrared spectrophotometry (UV-Vis-NIR). The results show that all the rapidly annealed thin films are crystallized. The crystalline quality

degree of preferential orientation and stoichiometry of thin films are improved and the average particle sizes of thin films are enlarged by the increase of sputtering power. Under the condition of sputtering power of 100 W

the sample has high crystalline quality and degree of preferential orientation

the least strain

pure-phase SnS thin film

Sn/S mole ratio of 1:1.09

the absorption coefficient of 10

-1

and the direct band-gap of 1.54 eV.

关键词

SnS薄膜射频磁控溅射快速退火晶体结构光学特性

Keywords

SnS thin filmRF magnetron sputteringrapid thermal annealingcrystalline structureoptical properties

references

RAY S C, KARANJAI M K, DASGUPTA D. Structure and photoconductive properties of dip-deposited SnS and SnS2 thin films and their conversion to tin dioxide by annealing in air[J]. Thin Solid Films, 1999, 350(1-2):72-78.

GOU X L, CHEN J, SHEN P W. Synthesis, characterization and application of SnSx(x=1, 2) nanoparticles[J]. Mater. Chem. Phys., 2005, 93(2-3):557-566.

AVELLANEDA D, NAIR M T S, NAIR P K. Photovoltaic structures using chemically deposited tin sulfide thin films[J]. Thin Solid Films, 2009, 517(7):2500-2502.

WEI G P, ZHANG Z L, ZHAO W M, et al.. Investigation on SnS film by RF sputtering for photovoltaic application[C]. Proceedings of 1994 IEEE First World Conference on Photovoltaic Energy Conversion, Waikoloa, USA, 1994, 1:365-368.

YANUAR, GUASTAVINO F, LLINARES C, et al.. SnS thin films grown by close-spaced vapor transport[J]. J. Mater. Sci. Lett., 2000, 19(23):2135-2137.

DEVIKA M, REDDY N K, PATOLSKY F, et al.. Ohmic contacts to SnS films:selection and estimation of thermal stability[J]. J. Appl. Phys., 2008, 104(12):124503-1-6.

YUE G H, WANG W, WANG L S, et al.. The effect of anneal temperature on physical properties of SnS films[J]. J. Alloys Compd., 2009, 474(1-2):445-449.

GHOSH B, DAS M, BANERJEE P, et al.. Characteristics of metal/p-SnS Schottky barrier with and without post-deposition annealing[J]. Solid State Sci., 2009, 11(2):461-466.

DEVIKA M, REDDY N K, REDDY D S, et al.. Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique[J]. J. Phys.:Condens. Matter, 2007, 19(30):306003-1-12.

REDDY K T R, REDDY P P, MILES R W, et al.. Investigations on SnS films deposited by spray pyrolysis[J]. Opt. Mater., 2001, 17(1-2):295-298.

HARTMAN K, JOHNSON J L, BERTONI M I, et al.. SnS thin-films by RF sputtering at room temperature[J]. Thin Solid Films, 2011, 519(21):7421-7424.

CRUZ M, MORALES J, ESPINOS J P, et al.. XRD, XPS and 119Sn NMR study of tin sulfides obtained by using chemical vapor transport methods[J]. J. Solid State Chem., 2003, 175(2):359-365.

RAN F Y, XIAO Z W, HIRAMATSU H, et al.. Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition[J]. Appl. Phys. Lett., 2014, 104(7):072106-1-4.

BANAI R E, LEE H, MOTYKA M A, et al.. Optical properties of sputtered SnS thin films for photovoltaic absorbers[J]. IEEE J. Photovolt., 2013, 3(3):1084-1089.

SOUSA M G, CUNHA A F D, FERNANDES P A. Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films[J]. J. Alloys Compd., 2014, 592:80-85.

PATEL M, MUKHOPADHYAY I, RAY A. Annealing influence over structural and optical properties of sprayed SnS thin films[J]. Opt. Mater., 2013, 35(9):1693-1699.

KUL M. Electrodeposited SnS film for photovoltaic applications[J]. Vacuum, 2014, 107:213-218.

REDDY N K, DEVIKA M, HAHN Y B, et al.. Impact of chemical treatment on the surface, structure, optical and electrical properties of SnS thin films[J]. Appl. Surf. Sci., 2013, 268:317-322.

SINSERMSUKSAKUL P, HEO J, NOH W, et al.. Atomic layer deposition of tin monosulfide thin films[J]. Adv. Energy Mater., 2011, 1(6):1116-1125.

RAHMANE S, AIDA M S, DJOUADI M A, et al.. Effects of thickness variation on properties of ZnO:Al thin films grown by RF magnetron sputtering deposition[J]. Superlatt. Microstruct., 2015, 79:148-155.

CHOWDHURY S, LAUGIER M T, RAHMAN I Z. Effect of target self-bias voltage on the mechanical properties of diamond-like carbon films deposited by RF magnetron sputtering[J]. Thin Solid Films, 2004, 468(1-2):149-154.

DAI H Y, ZHAN C, DU J. Studies on the influence of sputtering power on amorphous carbon films deposited by pulsed unbalanced magnetron sputtering[J]. Optik, 2016, 127(5):2512-2515.

SOHILA S, RAJALAKSHMI M, GHOSH C, et al.. Optical and Raman scattering studies on SnS nanoparticles[J]. J. Alloys Compd., 2011, 509(19):5843-5847.

CHAKI S H, CHAUDHARY M D, DESHPANDE M P. Effect of indium and antimony doping in SnS single crystals[J]. Mater. Res. Bull., 2015, 63:173-180.

杨序纲,吴琪琳. 拉曼光谱的分析与应用[M]. 北京:国防工业出版社, 2008. YANG X G, WU Q L. Raman Spectroscopy Analysis and Application[M]. Beijing:National Defense Industry Press, 2008. (in Chinese)

BASHKIROV S A, GREMENOK V F, IVANOV V A, et al.. Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films[J]. Thin Solid Films, 2015, 585:40-44.

刘磊,余亮,李学留,等. PLD制备的Cu掺杂SnS薄膜的结构和光学特性[J]. 发光学报, 2015, 36(11):1311-1319. LIU L, YU L, LI X L, et al.. Structure and optical properties of Cu-doped SnS thin films prepared by PLD[J]. Chin. J. Lumin., 2015, 36(11):1311-1319. (in Chinese)

REDDY N K, REDDY K T R. Optical behaviour of sprayed tin sulphide thin films[J]. Mater. Res. Bull., 2006, 41(2):414-422.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响

射频磁控溅射法制备SnS₂薄膜结构和光学特性的研究

高真空磁控溅射温度对Ga₂O₃微观结构及光学性能的影响

退火温度对旋涂法制备SnO₂薄膜性能的影响

磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究