GaN基白光LED电极的失效机制

夏云云; 文尚胜; 方方

doi:10.3788/fgxb20163708.1002

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GaN基白光LED电极的失效机制

发光学应用及交叉前沿 | 更新时间：2020-08-12

- GaN基白光LED电极的失效机制
- Failure Mechanism Analysis of Negative Electrode in GaN-based White LED
- 发光学报 2016年37卷第8期页码：1002-1007
- 作者机构：
  
  1. 华南理工大学高分子光电材料与器件研究所,广东广州,510640
  2. 华南理工大学发光材料与器件国家重点实验室,广东广州,510640
  3. 广东金鉴检测科技有限公司, 广东广州 511300
- 作者简介：
- 基金信息：
  
  国家文化科技提升计划（GJWHKJTSXM20154464）广东省科技计划（2013B090600048，2015B010134001，2015B010127004，2
- DOI：10.3788/fgxb20163708.1002
  中图分类号： TN383+.1
- 纸质出版日期：2016-8-5，
  
  收稿日期：2016-2-28，
  
  修回日期：2016-4-11，
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夏云云, 文尚胜, 方方. GaN基白光LED电极的失效机制[J]. 发光学报, 2016,37(8): 1002-1007

XIA Yun-yun, WEN Shang-sheng, FANG Fang. Failure Mechanism Analysis of Negative Electrode in GaN-based White LED[J]. Chinese Journal of Luminescence, 2016,37(8): 1002-1007
夏云云, 文尚胜, 方方. GaN基白光LED电极的失效机制[J]. 发光学报, 2016,37(8): 1002-1007 DOI： 10.3788/fgxb20163708.1002.

XIA Yun-yun, WEN Shang-sheng, FANG Fang. Failure Mechanism Analysis of Negative Electrode in GaN-based White LED[J]. Chinese Journal of Luminescence, 2016,37(8): 1002-1007 DOI： 10.3788/fgxb20163708.1002.

摘要

对负电极脱落造成白光LED失效进行了研究。结合扫描电子显微镜（SEM）和能谱分析（EDS）对退化样品芯片进行了表面形貌表征和微区成分分析。SEM观察到退化样品负极脱落处表面粗糙不平，且透明导电薄膜存在颗粒状结晶。经EDS检测发现负极脱落处存在腐蚀性氯元素，并在封装胶中检测出氯。分析认为，封装胶中残留的氯离子与负极中Al层发生的电化学腐蚀是致使样品失效的主要原因。

Abstract

The failure mechanism of white LED negative electrode shedding phenomenon was investigated. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used as two main techniques to characterize the surface morphology and composition of the chip. SEM shows that the surface of negative electrode dropped off is coarse

and granular crystals are formed in the transparent conductive film. Chlorine element has been detected in both corroded negative electrode part and the packaging glue by EDS testing. It is found that the electrochemical corrosion between chloridion and aluminum is the main reason to result in LED failure.

关键词

LED失效分析电极腐蚀

Keywords

LEDfailure analysiselectrodecorrosion

references

MUELLER-MACH R, MUELLER G O, KRAMES M R,et al.. High-power phosphor-converted light-emitting diodes based on Ⅲ-Nitrides[J]. IEEE J. Sel. Top. Quant. Electron., 2002, 8(2):339-345.

董丽,刘华,王尧,等.紧凑型LED配光设计中光源模型可靠性研究[J].光子学报, 2014, 43(2):0222003. DONG L, LIU H, WANG Y,et al.. Reliability of light source modeling for distribution design on compact LED[J]. Acta Photon. Sinica,2014, 43(2):0222003. (in Chinese)

MENEGHESSO G, LEVADA S, ZANONI E,et al.. Failure modes and mechanisms of DC-aged GaN LEDs[J]. Phys. Stat. Sol. (a), 2002, 194(2):389-392.

MENEGHINI M, TREVISANELLO L R, ZEHNDER U,et al.. High-temperature degradation of GaN LEDs related to passivation[J]. IEEE Trans. Electron Dev.,2006, 53(12):2981-2987.

郭春生,张燕峰,万宁,等.基于反应动力学的GaN LED参数退化模型的研究[J].物理学报, 2013, 62(21):218503-1-6. GUO C S, ZHANG Y F, WAN N,et al.. The investigation of LED degradation model based on the chemical kinetics[J]. Acta Phys. Sinica, 2013, 62(21):218503-1-6. (in Chinese)

CHANG M H, DAS D, VARDE P V,et al.. Light emitting diodes reliability review[J]. Microelectron. Reliab.,2012, 52(5):762-782.

张丽超,高欣,薄报学,等.白光高压LED的加速老化实验研究[J].长春理工大学学报(自然科学版), 2013, 36(3-4):1-4. ZHANG L C, GAO X, BO B X,et al.. Research on accelerated aging test on white HV LED[J]. J. Changchun Univ. Sci. Technol. (Nat. Sci. Ed.), 2013, 36(3-4):1-4. (in Chinese)

SCHMITZ A C, PING A T, KHAN M A,et al.. Metal contacts to n-type GaN[J]. J. Electron. Mater.,1998, 27(4):255-260.

康香宁,章蓓,胡成余,等.高反射率p-GaN欧姆接触电极[J].发光学报, 2006, 27(1):75-79. KANG X N, ZHANG B, HU C Y,et al.. Ohmic contact of high reflectivity on p-type GaN[J]. Chin. J. Lumin.,2006, 27(1):75-79. (in Chinese)

张建堃,陈国宏,王家庆,等.干/湿NaCl盐雾条件下钢芯铝绞(ACSR)导线腐蚀层结构及腐蚀机理[J].腐蚀与防护,2010, 31(8):581-586. ZHANG J K, CHEN G H, WANG J Q,et al.. Microstructure and corrosion mechanism of ACSR conductor in dry/wet NaCl salt atmosphere[J]. Corros. Protect.,2010, 31(8):581-586. (in Chinese)

徐丽新,胡津,耿林,等.铝的点蚀行为[J].宇航材料工艺, 2002, 32(2):21-24. XU L X, HU J, GENG L,et al.. Pitting behavior of aluminum[J]. Aerosp. Mater. Technol.,2002, 32(2):21-24. (in Chinese)

许刚,曹楚南,林海潮,等.阴离子对铝电极电化学行为的影响[J].中国腐蚀与防护学报, 1998, 18(3):209-213. XU G, CAO C N, LIN H C,et al.. Influence of anion on electrochemical behavior of aluminum[J]. J. Chin. Soc. Corros. Protect.,1998, 18(3):209-213. (in Chinese)

MOTAYED A, BATHE R, WOOD M C,et al.. Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN[J]. J. Appl. Phys.,2003, 93(2):1087-1094.

ADIVARAHAN V, SIMAN G, YANG J W,et al.. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors[J]. Appl. Phys. Lett.,2000, 77(6):863-865.

HA M W, CHOI Y H, LIM J,et al.. SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate[J]. Jpn. J. Appl. Phys.,2007, 46(4B):2291-2295.

艾伟伟,郭霞,刘斌,等.电流拥挤效应对GaN基发光二极管可靠性的影响[J].激光与红外, 2006, 36(6):491-494. AI W W, GUO X, LIU B,et al.. Effect of current crowding on the reliability of GaN-based LEDs[J]. Laser Infrared,2006, 36(6):491-494. (in Chinese)

吴艳艳,冯士维,乔彦斌,等.电流拥挤效应与LED器件可靠性分析[J].发光学报, 2013, 34(8):1051-1056. WU Y Y, FENG S W, QIAO Y B,et al.. Study of current crowding effect and reliability of LED devices[J]. Chin. J. Lumin., 2013, 34(8):1051-1056. (in Chinese)

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