浏览全部资源
扫码关注微信
1. 河北工业大学 电子信息工程学院, 天津 300401
2. 河北工业大学 电气工程学院 天津,300130
纸质出版日期:2016-8-5,
收稿日期:2016-1-30,
修回日期:2016-3-29,
扫 描 看 全 文
赵红东, 彭晓灿, 马俐等. 注入电流引起质子轰击VCSEL中的模式竞争[J]. 发光学报, 2016,37(8): 996-1001
ZHAO Hong-dong, PENG Xiao-can, MA Li etc. Mode Competition in The Proton Implanted VCSEL by Injected Current[J]. Chinese Journal of Luminescence, 2016,37(8): 996-1001
赵红东, 彭晓灿, 马俐等. 注入电流引起质子轰击VCSEL中的模式竞争[J]. 发光学报, 2016,37(8): 996-1001 DOI: 10.3788/fgxb20163708.0996.
ZHAO Hong-dong, PENG Xiao-can, MA Li etc. Mode Competition in The Proton Implanted VCSEL by Injected Current[J]. Chinese Journal of Luminescence, 2016,37(8): 996-1001 DOI: 10.3788/fgxb20163708.0996.
为了分析质子轰击垂直腔面发射激光器(VCSEL)中注入电流引起的激光模式竞争过程,在三维空间中对VCSEL激射后光电热进行了研究。给出仿真光电热的方程之后,在室温连续工作条件下,对电流孔半径
r
为4m、阈值电流I
th
为4.5 mA的VCSEL进行自洽求解。当注入电流I
in
分别为5.0,5.5,6.0 mA时,得到了对应的外加电压和输出光功率,并绘制了VCSEL的电势、注入电流、载流子、光场和热场的空间分布,给出了连续工作下输出光功率随注入电流变化的曲线。仿真结果表明:随着注入VCSEL中的电流增加,电流密度增大,激光的横向基模和横向一阶模式同时增强。横向一阶模式增加的强度及扩展的范围大于横向基模,激光输出能量逐渐向横向一阶模式过渡,横向模式竞争的同时产生载流子空间烧孔,因此在电流孔半径
r
m的VCSEL中,连续工作激光模式不稳定。
In order to present the process of mode competition with increasing injected current in the proton-implanted vertical cavity surface emitting laser (VCSEL)
the electric field
carrier
optical and temperature in its lasing were studied in the three dimensions. The opto-electro-thermal self-consistent simulation for the proton-implanted VCSEL under CW operation at room temperature was given after the equations for electric field
carrier
optical and temperature were shown. The voltage electrode and output power were obtained in the proton-implanted VCSEL with current aperture radius
r
=4 m and threshold injected current I
th
=4.5 mA under the injected current I
in
=5.0
5.5
6.0 mA
respectively. The distributions of electric field
carrier
optical and temperature were obtained in the continuous wave proton-implanted VCSEL. The dependent of the output power on the injected current in proton-implanted VCSEL was also derived. The results show that the injected current density is improved and expanded respectively with the increasing of the injected current. The first order transverse mode increases higher than the transverse fundamental mode while the two laser transverse modes are both improved. The output energy is gradual transition to the first order transverse mode. The space burn for carrier in the activity region is found as the mode competition. The laser transverse mode in continuous wave operation for proton-implanted VCSEL with current confinement radius
r
4 m is unstable.
垂直腔面发射激光器横模光电热仿真
vertical-cavity surface emitting laser (VCSEL)transverse modesopto-electro-thermal simulation
SODA H, IGA K I, KITAHARA C, et al.. GaInAsP/InP surface emitting injection lasers[J]. Jpn. J. Appl. Phys., 1979, 18(12):2329-2330.
舒畅,高志军,涂建华,等.基于VCSEL实时点到点OFDM光信号在MMFs中的传输[J].火力与指挥控制, 2015, 40(6):163-165. SHU C, GAO Z J, TU J H, et al.. Study of VCSEL-based real-time end-to-end 11.25 Gb/s optical OFDM signal transmission in MMFs[J]. Fire Control Comm. Control, 2015, 40(6):163-165. (in Chinese)
王立军,宁永强,秦莉,等.大功率半导体激光器研究进展[J].发光学报,2015, 36(1):1-19. WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J]. Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)
LU I C, WEI C C, SHI J W, et al.. Optimization of mode numbers of VCSELs for small-cell backhaul applications[J]. Opt. Commun., 2015, 347:81-87.
郝永芹,晏长岭,马晓辉,等.单模垂直腔面发射激光器的研究动态[J].激光与光电子学进展, 2013, 50(10):100003-1-6. HAO Y Q, YAN C L, MA X H, et al.. Progress on single mode vertical cavity surface emitting lasers[J]. Laser Optoelectron. Prog., 2013, 50(10):100003-1-6. (in Chinese)
李秀山,宁永强,崔锦江,等.非对称电流注入对矩形台面激光器的偏振分析[J].激光与光电子学进展,2015, 52(7):071402-1-5. LI X S, NING Y Q, CUI J J, et al.. Polarization properties of rectangle-shape VCSEL with asymmetrical current injection[J]. Laser Optoelectron. Prog., 2015, 52(7):071402-1-5. (in Chinese)
关宝璐,刘欣,江孝伟,等.多横模垂直腔面发射激光器及其波长特性[J].物理学报, 2015, 64(16):164203-1-8. GUAN B L, LIU X, JIANG X W, et al.. Multi-transverse-mode and wavelength split characteristics of vertical cavity surface emitting laser[J]. Acta Phys. Sinica,2015, 64(16):164203-1-8. (in Chinese)
ARYAN H, KHERADMAND R, AHMADI S, et al.. Investigation and optimization of all-optical switches based on transverse optical patterns in VCSELs by modifying active medium parameters[J]. Optik, 2013, 124(12):1095-1099.
张祥伟,宁永强,秦莉,等.氧化光栅型垂直腔面发射激光器的研究[J].发光学报, 2013, 34(11):1517-1520. ZHANG X W, NING Y Q, QIN L, et al.. Study of oxide-grating vertical-cavity surface-emitting lasers[J]. Chin. J. Lumin., 2013, 34(11):1517-1520. (in Chinese)
ZHANG J, YU J L, CHENG S Y, et al.. Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence[J]. Chin. Phys. B, 2014, 23(2):027304-1-4.
GADALLAH A S, MICHALZIK R. High-output-power single-higher-order transverse mode VCSEL with shallow surface relief[J]. IEEE Photon. Technol. Lett., 2011, 23(15):1040-1042.
LAVRENCIK J, PAVAN S K, HAUPT D K, et al.. Direct Measurement of VCSEL transverse mode correlation and kmpn[J]. IEEE Photon. Technol. Lett., 2015, 27(19):2031-2034.
贾鹏,秦莉,张星,等.大功率VCSEL三角列阵的空间相干性[J].发光学报, 2015, 36(6):673-678. JIA P, QIN L, ZHANG X, et al.. Spatial coherence of high power VCSEL triangular-array[J]. Chin. J. Lumin., 2015, 36(6):673-678. (in Chinese).
赵红东,张卫华,李文超,等.电流孔的尺寸对双氧化限制垂直腔面发射激光器阈值的影响[J].物理学报, 2010, 59(6):3948-3952. ZHAO H D, ZHANG W H, LI W C, et al.. Influence of current aperture size on threshold in double oxide confined vertical-cavity surface-emitting lasers[J]. Acta Phys. Sinica,2010, 59(6):3948-3952. (in Chinese)
丁锋,张靖,王品红,等.一种850 nm氧化限制型垂直腔面发射激光器的设计[J].半导体光电, 2013, 34(1):56-58. DING F, ZHANG J, WANG P H, et al.. A design of 850 nm oxide-confined VCSEL[J]. Semicond. Optoelectron., 2013, 34(1):56-58. (in Chinese)
GOHARRIZI A Z, ALAHYARIZADEH G, HASSAN Z, et al.. The effect of electron blocking layer on the performance of MQW oxide-confined intracavity-contacted InGaN-based vertical cavity surface emitting lasers[J]. Optik, 2015, 126(14):1377-1380.
ZHAO H D, SUN M, WANG W, et al.. Threshold control in VCSELs by proton implanted depth[J]. Optoelectron. Lett., 2011, 7(4):263-265.
毛明明,徐晨,魏思民,等.质子注入能量对垂直腔面发射激光器的阈值和功率的影响[J].物理学报,2012, 61(21):214207-1-5. MAO M M, XU C, WEI S M, et al.. The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser[J]. Acta Phys. Sinica,2012, 61(21):214207-1-5. (in Chinese)
0
浏览量
37
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构