高亮度锥形半导体激光器

李景; 邱运涛; 曹银花; 王青; 尧舜; 秦文斌; 刘友强; 王智勇

doi:10.3788/fgxb20163708.0990

您当前的位置：

首页 >

文章列表页 >

高亮度锥形半导体激光器

器件制备及器件物理 | 更新时间：2020-08-12

- 高亮度锥形半导体激光器
- High Brightness Tapered Diode Laser
- 发光学报 2016年37卷第8期页码：990-995
- 作者机构：
  
  北京工业大学激光工程研究院北京,100124
- 作者简介：
- 基金信息：
  
  &ldquo();863&rdquo();国家高技术研究发展计划（2014AA032609）国家自然科学基金（61404050）广东省科技计划（2014B0101190
- DOI：10.3788/fgxb20163708.0990
  中图分类号： TN24;TN31
- 纸质出版日期：2016-8-5，
  
  收稿日期：2016-4-1，
  
  修回日期：2016-5-24，
扫描看全文
李景, 邱运涛, 曹银花等. 高亮度锥形半导体激光器[J]. 发光学报, 2016,37(8): 990-995

LI Jing, QIU Yun-tao, CAO Yin-hua etc. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 2016,37(8): 990-995
李景, 邱运涛, 曹银花等. 高亮度锥形半导体激光器[J]. 发光学报, 2016,37(8): 990-995 DOI： 10.3788/fgxb20163708.0990.

LI Jing, QIU Yun-tao, CAO Yin-hua etc. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 2016,37(8): 990-995 DOI： 10.3788/fgxb20163708.0990.

摘要

介绍了由双量子阱非对称波导结构外延片刻蚀成的带有脊形波导结构的锥形半导体激光器。该激光器有效抑制了p型区域对激光的影响，减小了半导体激光快轴方向的发散角，同时采用脊形结构和锥形结构的组合获得了高亮度激光。实验中，在电流7 A时获得了中心波长963 nm、连续功率4.026 W的激光输出。测得慢轴方向和快轴方向激光光束参数乘积分别为1.593 mmmrad和0.668 mmmrad。

Abstract

Tapered diode laser with ridge waveguide was introduced and formed through etching the wafer with asymmetrical waveguide structure and double quantum walls. In the laser

the negative effect of p-cladding layer was decreased and the vertical divergence angle was reduced. The high brightness power is arrived on account of the combination of the ridge waveguide and the taper waveguide. In experiment

the laser delivers 976 nm and 4 W CW at 7 A current. The slow direction beam quality and the fast direction beam quality are measured of 1.593 mmmrad and 0.668 mmmrad

respectively.

关键词

半导体激光器锥形波导脊形波导高亮度高光束质量

Keywords

diode lasertapered waveguideridge waveguidehigh brightnesshigh beam quality

references

王立军,彭航宇,张俊.大功率半导体激光合束进展[J].中国光学, 2015, 8(4):517-534. WANG L J, PENG H Y, ZHANG J. Advance on high power diode laser coupling[J]. Chin. Opt., 2015, 8(4):517-534. (in Chinese)

WALPOLE J N. Semiconductor amplifiers and lasers with tapered gain regions[J]. Opt. Quant. Electron., 1996, 28(6):623-645.

SUJECKI S, BORRUEL L, WYKES J, et al.. Nonlinear properties of tapered laser cavities[J]. IEEE J. Select. Top. Quant. Electron., 2003, 9(3):823-834.

BORRUEL L, SUJECKI S, MORENO P, et al.. Quasi-3-D simulation of high-brightness tapered lasers[J]. IEEE J. Quant. Electron., 2004, 40(5):463-472.

PASCHKE K, SWNPF B, DITTMAR F, et al.. 5.3 W CW high brightness 980-nm tapered diode lasers[C]. Proceedings of Conference on Lasers and Electro-Optics Europe, Munich, Germany, 2005:12489.

SUMPF B, BEISTER G, ERBERT G, et al.. Reliable 1-W CW operation of high-brightness tapered diode lasers at 735 nm[J]. IEEE Photon. Technol. Lett., 2004, 16(4):984-986.

KALLENBACH S, KELEMEN M T, AIDAM R, et al.. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm[J].SPIE, 2005:406-415.

李璟,刘媛媛,马骁宇.电极分离的980 nm锥形激光器的研制[J].半导体学报, 2007, 28(8):1302-1306. LI J, LIU YY, MA X Y. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J]. Chin. J. Semicond., 2007, 28(8):1302-1306. (in Chinese)

OSTENDORF R, KAUFEL G, MORITZ R, et al.. 10 W high-efficiency high-brightness tapered diode lasers at 976 nm[J]. SPIE,2008:68760H.

杨晔,刘云,张金龙,等. 850 nm高亮度近衍射极限锥形半导体激光器[J].发光学报, 2011,32(10):1064-1068. YANGY, LIU Y, ZHANG J L, et al.. Near diffraction limit high-brightness 850 nm tapered laser diodes[J]. Chin. J. Lumin., 2011, 32(10):1064-1068. (in English)

曲博文. 808 nm锥形半导体激光器的设计[D].长春:长春理工大学, 2010. QU B W. Design of 808 nm Tapered Semiconductor Lasers[D]. Changchun:Changchun University of Science and Technology, 2010. (in Chinese)

GKDEN B, MANSURIPUR T S, BLANCHARD R, et al.. High-brightness tapered quantum cascade lasers[J]. Appl. Phys. Lett., 2013, 102(5):053503-1-4.

GAO W, XU Z T, CHENG L S, et al.. High power high brightness single emitter laser diodes at axcel photonics[J].SPIE, 2008, 6876:8761F.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

强化载流子传输实现高亮度高效率钙钛矿量子点发光二极管

基于RGB三基色半导体激光的高功率白激光光源

用于碱金属蒸汽激光器泵浦的窄线宽780 nm半导体激光源

高亮度大功率半导体激光器光纤耦合模块

基于外腔反馈二极管线阵列的smile效应测量方法