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北京工业大学 激光工程研究院 北京,100124
纸质出版日期:2016-8-5,
收稿日期:2016-4-1,
修回日期:2016-5-24,
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李景, 邱运涛, 曹银花等. 高亮度锥形半导体激光器[J]. 发光学报, 2016,37(8): 990-995
LI Jing, QIU Yun-tao, CAO Yin-hua etc. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 2016,37(8): 990-995
李景, 邱运涛, 曹银花等. 高亮度锥形半导体激光器[J]. 发光学报, 2016,37(8): 990-995 DOI: 10.3788/fgxb20163708.0990.
LI Jing, QIU Yun-tao, CAO Yin-hua etc. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 2016,37(8): 990-995 DOI: 10.3788/fgxb20163708.0990.
介绍了由双量子阱非对称波导结构外延片刻蚀成的带有脊形波导结构的锥形半导体激光器。该激光器有效抑制了p型区域对激光的影响,减小了半导体激光快轴方向的发散角,同时采用脊形结构和锥形结构的组合获得了高亮度激光。实验中,在电流7 A时获得了中心波长963 nm、连续功率4.026 W的激光输出。测得慢轴方向和快轴方向激光光束参数乘积分别为1.593 mmmrad和0.668 mmmrad。
Tapered diode laser with ridge waveguide was introduced and formed through etching the wafer with asymmetrical waveguide structure and double quantum walls. In the laser
the negative effect of p-cladding layer was decreased and the vertical divergence angle was reduced. The high brightness power is arrived on account of the combination of the ridge waveguide and the taper waveguide. In experiment
the laser delivers 976 nm and 4 W CW at 7 A current. The slow direction beam quality and the fast direction beam quality are measured of 1.593 mmmrad and 0.668 mmmrad
respectively.
半导体激光器锥形波导脊形波导高亮度高光束质量
diode lasertapered waveguideridge waveguidehigh brightnesshigh beam quality
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