化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨

巩哲; 何大伟; 王永生; 许海腾; 董艳芳

doi:10.3788/fgxb20163708.0984

您当前的位置：

首页 >

文章列表页 >

化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨

器件制备及器件物理 | 更新时间：2020-08-12

- 化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨
- Controllable Synthesis of High Quality Monolayer WS₂ with Large Size on Sapphire Substrate by Chemical Vapor Deposition
- 发光学报 2016年37卷第8期页码：984-989
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室, 北京 100044
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61527817，61335006，61378073）北京市科学技术委员会项目（Z151100003315006）国家重点研发计划（2016YFA02
- DOI：10.3788/fgxb20163708.0984
  中图分类号： O484.4
- 纸质出版日期：2016-8-5，
  
  收稿日期：2016-3-28，
  
  修回日期：2016-4-19，
扫描看全文
巩哲, 何大伟, 王永生等. 化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨[J]. 发光学报, 2016,37(8): 984-989

GONG Zhe, HE Da-wei, WANG Yong-sheng etc. Controllable Synthesis of High Quality Monolayer WS<sub>2</sub> with Large Size on Sapphire Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2016,37(8): 984-989
巩哲, 何大伟, 王永生等. 化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨[J]. 发光学报, 2016,37(8): 984-989 DOI： 10.3788/fgxb20163708.0984.

GONG Zhe, HE Da-wei, WANG Yong-sheng etc. Controllable Synthesis of High Quality Monolayer WS<sub>2</sub> with Large Size on Sapphire Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2016,37(8): 984-989 DOI： 10.3788/fgxb20163708.0984.

摘要

在常压条件下使用CVD法生长单层WS

，通过改变实验条件实现控制晶粒大小或生长成薄膜的目的。采用光学显微镜、拉曼、光致发光谱等对制备的样品进行表征，得到了结晶质量高、尺寸达120m的单层WS

晶粒。同时讨论了几个重要参数如温度、生长时间以及钨源用量等对生长单层WS

的影响。结果表明：温度对CVD生长WS

影响最大，高温有助于生长高结晶质量的WS

。调节生长时间可以控制WS

晶粒的大小，较长时间能生长出连续的薄膜。过量的S蒸汽会抑制WS

生长，影响结晶质量。

Abstract

Single layer WS

was synthesized by atmospheric pressure CVD method. The mono-WS

of triangular grain was grown by the single controlled quartz tube furnaces on well cleaned sapphire substrates. The grain size could be controlled by adjusting the experimental conditions. Optical microscopy

Raman spectroscopy

and photoluminescence emission spectroscopy were utilized to characterize WS

samples. The Optical microscopy shows the length of triangle domain up to 120 m and the uniform of WS

. Raman spectrum of a WS

single domain demonstrates the characteristic E

(in-plane vibrational) mode and A

(out-of-plane vibrational) mode at 355.1 cm

-1

and 418.1 cm

-1

respectively. The frequency difference between E

mode and A

mode is 64 cm

-1

which matches the single-layer-thick WS

films. The PL peak of WS

is located at 619 nm (2.0 eV) which consistents with its direct-band-gap. Furthermore

the PL intensity of monolayer WS

is very strong

which reveals its high crystalline. The experiment results demonstrate that the large size mono-WS

flakes with high crystalline can be synthesized controllable on sapphire. The effects of some essential growth parameters such as the temperature

the growth time and the precursor on the controlled growth of mono-layer WS

are also discussed.

关键词

单层二硫化钨化学气相沉积拉曼光谱光致发光谱

Keywords

monolayer WS2chemical vapor depositionRaman spectroscopyphotoluminescence spectroscopy

references

HUANG X, YIN Z Y, WU S X, et al.. Graphene-based materials:synthesis, characterization, properties, and applications[J]. Small, 2011, 7(14):1876-1902.

GRAF D, MOLITOR F, ENSSLIN K, et al.. Spatially resolved Raman spectroscopy of single-and few-layer graphene[J]. Nano Lett., 2007, 7(2):238-242.

FU Q, WANG W H, YANG L, et al.. Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition[J]. RSC Adv., 2015, 5(21):15795-15799.

刘洋洋,陈晓冬,王现英,等.类石墨烯过渡金属二硫化物的研究进展[J].材料导报A,2014, 28(2):23-27. LIU Y Y, CHEN X D, WANG X Y, et al.. Research progress of two dimensional transition metal dichalcogenides[J]. Mater. Rev. A, 2014, 28(2):23-27. (in Chinese)

LEE Y H, ZHANG X Q, ZHANG W J, et al.. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition[J]. Adv. Mater., 2012, 24(17):2320-2325.

LIN Y C, ZHANG W J, HUANG J K, et al.. Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization[J]. Nanoscale, 2012, 4(20):6637-6641.

SPLENDIANI A, SUN L, ZHANG Y B, et al.. Emerging photoluminescence in monolayer MoS2[J]. Nano Lett., 2010, 10(4):1271-1275.

WANG X S, FENG H B, WU Y M, et al.. Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition[J]. J. Am. Chem. Soc., 2013, 135(14):5304-5307.

SHI Y M, LI H N, LI L J. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques[J]. Chem. Soc. Rev., 2015, 44(9):2744-2756.

FAN Y P, HAO G L, LUO S W, et al.. Synthesis, characterization and electrostatic properties of WS2 nanostructures[J]. AIP Adv., 2014, 4(5):057105-1-6.

ELAS A L, PEREA-LPEZ N, CASTRO-BELTRN A, et al.. Controlled synthesis and transfer of large-area WS2 sheets:from single layer to few layers[J]. ACS Nano, 2013, 7(6):5235-5242.

ZHANG Y, ZHANG Y F, JI Q Q, et al.. Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary[J]. ACS Nano, 2013, 7(10):8963-8971.

RONG Y M, FAN YE, KOH A L, et al.. Controlling sulphur precursor addition for large single crystal domains of WS2[J]. Nanoscale, 2014, 6(20):12096-12103.

JI Q Q, ZHANG Y, ZHANG Y F, et al.. Chemical vapour deposition of group-VIB metal dichalcogenide monolayers:engineered substrates from amorphous to single crystalline[J]. Chem. Soc. Rev., 2015, 44(9):2587-2602.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

单根磷掺杂β-Ga₂O₃微米线日盲紫外探测器性能

MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响

CVD合成的掺杂BN_x-石墨烯纳米复合材料:结构和发光性能

基于分子对接的类二恶英类多氯联苯的拉曼光谱增强

溶液法制备氧化锌晶体的微结构及发光特性研究