硅衬底GaN基LED薄膜芯片的应力调制

您当前的位置：

首页 >

文章列表页 >

硅衬底GaN基LED薄膜芯片的应力调制

器件制备及器件物理 | 更新时间：2020-08-12

|

- 硅衬底GaN基LED薄膜芯片的应力调制
- Stress Modulation of GaN Based LED Thin Film Chip on Silicon Substrate
- 发光学报 2016年37卷第8期页码：979-983
- 作者机构：
  
  1. 闽南师范大学物理与信息工程学院, 福建漳州 363000
  2. 南昌大学国家硅基LED工程技术研究中心, 江西南昌 330047
- 作者简介：
- 基金信息：
  
  国家科技部支撑计划（2011BAB32B01）资助项目()
- DOI：10.3788/fgxb20163708.0979
  中图分类号： TN304
- 纸质出版日期：2016-8-5，
  
  收稿日期：2016-3-15，
  
  修回日期：2016-4-18，
扫描看全文
汤英文, 熊传兵, 王佳斌. 硅衬底GaN基LED薄膜芯片的应力调制[J]. 发光学报, 2016,37(8): 979-983

TANG Ying-wen, XIONG Chuan-bing, WANG Jia-bin. Stress Modulation of GaN Based LED Thin Film Chip on Silicon Substrate[J]. Chinese Journal of Luminescence, 2016,37(8): 979-983
汤英文, 熊传兵, 王佳斌. 硅衬底GaN基LED薄膜芯片的应力调制[J]. 发光学报, 2016,37(8): 979-983 DOI： 10.3788/fgxb20163708.0979.

TANG Ying-wen, XIONG Chuan-bing, WANG Jia-bin. Stress Modulation of GaN Based LED Thin Film Chip on Silicon Substrate[J]. Chinese Journal of Luminescence, 2016,37(8): 979-983 DOI： 10.3788/fgxb20163708.0979.

摘要

将Si衬底GaN基LED外延薄膜经晶圆键合、去硅衬底等工艺制作成垂直结构GaN基LED薄膜芯片，并对其进行不同温度的连续退火，通过高分辨X射线衍射（HRXRD）研究了连续退火过程中GaN薄膜芯片的应力变化。研究发现：垂直结构LED薄膜芯片在160~180℃下退火应力释放明显，200℃时应力释放充分，GaN的晶格常数接近标准值。继续升温应力不再发生明显变化，GaN薄膜的晶格常数只在标准晶格常数值附近波动。扫描电子显微镜给出的bonding层中Ag-In合金情况很好地解释了薄膜芯片应力的变化。

Abstract

Vertical structured thin film GaN LEDs on Si substrate were fabricated by wafer boding and substrate removing process. The LED chips were annealed at various temperatures

and high-resolution X-ray diffraction (HRXRD) measurements were performed to analyze the stress in GaN films. The results show that the annealing within 160-180℃ can obviously reduce the stress in GaN thin film

and the stress can be fully released at 200℃ and the measured lattice constants are close to the standard values of bulk GaN. Annealing at higher temperatures

the lattice constants of the GaN films only slightly fluctuate around the standard values. Scanning electron microscope (SEM) was used to analyze the cross-sectional morphology of the bonding layers. The evolution of the stress in GaN film can be well explained by the alloying degree of the Ag-In layers.

关键词

硅衬底GaN应力XRDAg-In

Keywords

Si substrateGaNstressXRDAg-In

references

CRAWFORD M H. LEDs for solid-state lighting:performance challenges and recent advances[J].IEEE J. Sel. Top. Quant. Electron., 2009, 15(4):1028-1040.

NAKAMURA S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes[J].Science,1998, 281(5379):956-961.

赵玲慧,张连,王晓东,等.基于InGaN/GaN多量子阱双波长发光二极管生长及发光性能[J].光子学报, 2013, 42(10):1135-1139. ZHAO L H, ZHANG L, WANG X D, et al.. Growth and optical properties of InGaN/GaN dual-wavelength light-emitting diodes[J].Acta Photon. Sinica, 2013, 42(10):1135-1139. (in Chinese)

李正凯,严启荣,罗长得,等. GaN垒层厚度渐变的双蓝光波长发光二极管[J].光子学报, 2013, 42(7):757-762. LI Z K, YAN Q R, LUO C D, et al.. Dual-blue wavelength light-emitting diodes based on varied GaN barrier thickness[J].Acta Photon. Sinica, 2013, 42(7):757-762. (in Chinese)

MO C L, FANG W Q, PU Y, et al.. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD[J].J. Cryst. Growth,2005, 285(3):312-317.

XIONG C B, JIANG F Y, FANG W Q, et al.. Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate[J].Sci. China Ser. E, 2006, 49(3):313-321.

熊贻婧,张萌,熊传兵,等. Si衬底GaN基LED外延薄膜转移至金属基板的应力变化[J].发光学报, 2010, 31(4):531-537. XIONG Y J, ZHANG M, XIONG C B, et al.. Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si(111)[J].Chin. J. Lumin., 2010, 31(4):531-537. (in Chinese)

江风益,刘军林,王立,等.硅衬底高光效GaN基蓝色发光二极管[J].中国科学:物理学力学天文学, 2015, 45(6):067302-1-19. JIANG F Y, LIU J L, WANG L, et al.. High optical efficiency GaN based blue LED on silicon substrate[J].Sci. Sin. Phys., Mech. Astron.,2015, 45(6):067302-1-19. (in Chinese)

王雪蓉,魏莉萍,郑会保,等.利用高分辨X射线衍射技术计算铝镓氮外延膜的晶格参数[J].分析测试技术与仪器, 2010, 16(3):152-156. WANG X R, WEI L P, ZHENG H B, et al.. Study on crystal lattice constant of Al<em>xGal-xN epitaxial film by high resolution X-ray diffraction technique[J].Anal. Test. Technol. Instrum., 2010, 16(3):152-156. (in Chinese)

KISIELOWSKI C, KRGER J, RUVIMOV S, et al.. Strain-related phenomena in GaN thin films[J].Phys. Rev. B, 1996, 54(24):17745-17753.

DETCHPROHM T, HIRAMATSU K, ITOH K, et al.. Relaxation process of the thermal strain in the GaN/a-Al2O3 hetero-structure and determination of the intrinsic lattice constants of GaN free from the strain[J].Jpn. J. Appl. Phys., 1992, 31(10B):L1454-L1456.

0

浏览量

36

下载量

2

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

相关文章

垒温对硅衬底GaN基蓝光LED发光效率的影响

Si衬底GaN基蓝光LED老化性能

SiN 钝化膜对Si衬底GaN基蓝光LED 性能影响

不同Mo层厚度的AlN/Mo/Sc_0.2Al_0.8N复合结构上MOCVD外延GaN

SiO₂图形化蓝宝石衬底对GaN生长及LED发光性能的影响

相关作者

高江东

刘军林

徐龙权

王光绪

丁杰

陶喜霞

张建立

潘拴

相关机构

南昌大学国家硅基LED工程技术研究中心

南昌大学教育部发光材料与器件工程研究中心

晶能光电(江西)有限公司

南昌大学教育部发光材料与器件工程研究中心

北京工业大学信息学部光电子技术教育部重点实验室

地址：长春市经济技术开发区东南湖大路3888号邮编：130033
联系电话：0431-86176862 Email：fgxbt@126.com
本系统由Light学术出版中心、北京北大方正电子有限公司共建吉ICP备11002662号-17 京公网安备11010802024621
本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies

⁰