纳米柱高度对GaN基绿光LED光致发光谱的影响

黄华茂; 黄江柱; 胡晓龙; 王洪

doi:10.3788/fgxb20163708.0967

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纳米柱高度对GaN基绿光LED光致发光谱的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 纳米柱高度对GaN基绿光LED光致发光谱的影响
- Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED
- 发光学报 2016年37卷第8期页码：967-972
- 作者机构：
  
  1. 广州现代产业技术研究院, 广东广州 511458
  2. 华南理工大学广东省光电工程技术研究开发中心物理与光电学院, 广东广州 510640
- 作者简介：
- 基金信息：
  
  &ldquo();863&rdquo();国家高技术研究发展计划（2014AA032609）国家自然科学基金（61404050）广东省科技计划（2014B0101190
- DOI：10.3788/fgxb20163708.0967
  中图分类号： TN303;TN304
- 纸质出版日期：2016-8-5，
  
  收稿日期：2016-4-10，
  
  修回日期：2016-5-20，
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黄华茂, 黄江柱, 胡晓龙等. 纳米柱高度对GaN基绿光LED光致发光谱的影响[J]. 发光学报, 2016,37(8): 967-972

HUANG Hua-mao, HUANG Jiang-zhu, HU Xiao-long etc. Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED[J]. Chinese Journal of Luminescence, 2016,37(8): 967-972
黄华茂, 黄江柱, 胡晓龙等. 纳米柱高度对GaN基绿光LED光致发光谱的影响[J]. 发光学报, 2016,37(8): 967-972 DOI： 10.3788/fgxb20163708.0967.

HUANG Hua-mao, HUANG Jiang-zhu, HU Xiao-long etc. Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED[J]. Chinese Journal of Luminescence, 2016,37(8): 967-972 DOI： 10.3788/fgxb20163708.0967.

摘要

纳米柱结构是释放高In组分InGaN/GaN绿光LED量子阱层应变的有效方法。本文采用自组装的聚苯乙烯微球掩模、感应耦合等离子体干法刻蚀和KOH溶液的湿法腐蚀，在GaN基绿光LED外延片上制备了3种高度的纳米柱结构，通过扫描电子显微镜观察纳米柱结构的形貌，并测试了常温和10 K低温时的光致发光谱（PL）。结果表明：应变释放对压电场的影响显著，使得纳米柱结构样品的内量子效率（IQE）提高，PL谱峰值波长蓝移；应变在量子阱中的不均匀分布还使得PL谱半高全宽（FWHM）展宽。与普通平面结构相比，高度为747 nm的纳米柱结构可使得IQE提升917%，PL谱峰值波长蓝移18 nm、FWHM展宽7 nm。另外，纳米柱结构样品的有源区有效面积减小可使得PL谱FWHM减小。

Abstract

Nanorod structure is an effective method to release the strain in multiple quantum wells of InGaN/GaN green LED with high In component. In this paper

the natural lithography with self-assembled polystyrene microspheres

inductively coupled plasma dry etching and wet-etching using KOH aqueous solution were used to fabricate the nanorod structure with three heights in GaN-based green LED epitaxial wafers. The morphology was observed by scanning electron microscope

and the photoluminescence (PL) spectra at room temperature and 10 K low temperature were characterized. It is shown that the strain relaxation significantly affect the piezoelectric field

thereby the nanorod structure leads to a promotion of the wafers' internal quantum efficiency (IQE) and blue-shift of the peak wavelengths of PL spectra

and the nonuniform distribution of the strain causes a broadening of the FWHM (full width at half maximum). Compared with the ordinary planar structure

the nanorod structure with the height of 747 nm induces an enhancement of 917% for the IQE

a blue-shift of 18 nm for the peak wavelengths of PL spectrum

and a broadening of 7 nm for the FWHM. The results also indicate that the decreasing of effective active area of samples with nanorod structure may reduce the FWHM.

关键词

GaN基LED绿光LED纳米柱结构光致发光谱

Keywords

GaN-based LEDgreen LEDnanorod structurephotoluminescence spectrum

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