基于谐振腔效应的近紫外垂直结构LED光萃取效率优化

胡晓龙; 齐赵毅; 黄华茂; 王洪

doi:10.3788/fgxb20163707.0836

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基于谐振腔效应的近紫外垂直结构LED光萃取效率优化

器件制备及器件物理 | 更新时间：2020-08-12

- 基于谐振腔效应的近紫外垂直结构LED光萃取效率优化
- Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs
- 发光学报 2016年37卷第7期页码：836-844
- 作者机构：
  
  1. 华南理工大学广东省光电工程技术研究开发中心,广东广州,510640
  2. 华南理工大学物理与光电学院,广东广州,510640
  3. 华南理工大学电子与信息学院,广东广州,510640
- 作者简介：
- 基金信息：
  
  "();863"();国家高技术发展研究计划(2014AA032609)();国家自然科学基金(61404050,61504044)();广东省战略性新
- DOI：10.3788/fgxb20163707.0836
  中图分类号： TN383+.1
- 纸质出版日期：2016-7-5，
  
  收稿日期：2016-3-17，
  
  修回日期：2016-4-26，
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胡晓龙, 齐赵毅, 黄华茂等. 基于谐振腔效应的近紫外垂直结构LED光萃取效率优化[J]. 发光学报, 2016,37(7): 836-844

HU Xiao-long, QI Zhao-yi, HUANG Hua-mao etc. Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(7): 836-844
胡晓龙, 齐赵毅, 黄华茂等. 基于谐振腔效应的近紫外垂直结构LED光萃取效率优化[J]. 发光学报, 2016,37(7): 836-844 DOI： 10.3788/fgxb20163707.0836.

HU Xiao-long, QI Zhao-yi, HUANG Hua-mao etc. Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(7): 836-844 DOI： 10.3788/fgxb20163707.0836.

摘要

利用有限时域差分法研究近紫外垂直结构LED的光萃取效率的影响因素。结果显示

LED的光萃取效率随p-GaN层厚度的变化呈周期性振荡变化

在极大值点处的光萃取效率是极小值点处的4.8倍。进一步地

对上述振荡极大值点和极小值点的n-GaN层厚度和表面光子晶体结构进行优化

优化的光萃取效率分别达到35.3%和24.7%

比优化前各提高了37.9%和280%。因此

合理的外延层和光子晶体结构可有效提高近紫外垂直结构LED的光萃取效率

这对实验制备高效近紫外垂直结构LED芯片具有一定的指导作用。

Abstract

Optimization of LED epilayer and photonic crystals (PC) structure for high light extraction efficiency (LEE) UV-A vertical-structure LEDs (VS-LEDs) were performed by using finite difference time domain method. The LEE of the VS-LEDs was markedly enhanced by optimizing the thicknesses of p-GaN layer and parameters of PC structure. The LEE of the VS-LEDs shows cyclic variation as function of the thicknesses of p-GaN layer. It is showed that the LEE of the VS-LEDs with the p-GaN thickness of 200 nm is 4.8 times to that of the VS-LEDs with the p-GaN thickness of 310 nm. In addition

the thickness of the n-GaN layer and the surface photonic crystal structure were further optimized

and the LEE of the VS-LEDs with the p-GaN thickness of 200 nm and 310 nm reaches 35.3% and 24.7%

respectively. The optimized LEE of the VS-LEDs is 1.4 and 3.8 times to that of the VS-LEDs without PC structure

respectively. Therefore

the reasonable LED epilayer and the PC structure can effectively improve the LEE of the VS-LEDs. It provides a theoretical guide for the preparation of the UV-A VS-LEDs.

关键词

发光二极管光萃取效率近紫外光子晶体谐振腔效应

Keywords

light-emitting diodeslight extraction efficiencyultraviolet-Aphotonic crystalsresonant cavity effect

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