浏览全部资源
扫码关注微信
1. 中国科学院半导体研究所 集成光电子学国家重点实验室 北京,100083
2. 河南仕佳光子科技有限公司,河南 鹤壁,458030
纸质出版日期:2016-7-5,
收稿日期:2016-2-19,
修回日期:2016-3-29,
扫 描 看 全 文
刘丽杰, 吴远大, 王玥等. 1310 nm垂直腔面发射激光器芯片制备技术的研究进展[J]. 发光学报, 2016,37(7): 809-815
LIU Li-jie, WU Yuan-da, WANG Yue etc. Research Progress of 1310 nm VCSELs Chip Technology[J]. Chinese Journal of Luminescence, 2016,37(7): 809-815
刘丽杰, 吴远大, 王玥等. 1310 nm垂直腔面发射激光器芯片制备技术的研究进展[J]. 发光学报, 2016,37(7): 809-815 DOI: 10.3788/fgxb20163707.0809.
LIU Li-jie, WU Yuan-da, WANG Yue etc. Research Progress of 1310 nm VCSELs Chip Technology[J]. Chinese Journal of Luminescence, 2016,37(7): 809-815 DOI: 10.3788/fgxb20163707.0809.
垂直腔面发射激光器(VCSELs)在光纤通讯领域有着广泛的应用前景
国际上对VCSELs需求逐年增加
而国内目前VCSELs的产业化尚属空白。本文从两方面着手综述1310 nm VCSELs制备方法。将可以制备出1310 nm VCSELs的4种材料
从理论、制备、量产时需要考虑的因素等方面进行较为全面的汇总分析;同时对两种主流的制备方法从工艺步骤分析其在产业化方面的优势与不足。
The vertical-cavity surface-emitting laser(VCSEL) is becoming a key device in the gigabit
local-area networks(LANs) and optical interconnets. Its volumn is increasing ever year in the world. However
there is no company to produce this promising device in China. In this paper
we review its material system properties and fabrication technology of 1310 nm long-wavelength band and analyse the advantage and disadvantage from production. Lastly
we give a conclusion which method is better choice in the industrlization.
垂直腔面发射激光器1310 nm产业化
vertical cavity surface-emitting lasers1 310 nmindustrialization
张祥伟,宁永强,秦莉,等. 氧化光栅型垂直腔面发射激光器的研究[J]. 发光学报, 2013, 34(11):1517-1520. ZHANG X W, NING Y Q, QIN L, et al.. Study of oxide-grating vertical-cavity surface-emitting lasers[J]. Chin. J. Lumin., 2013, 34(11):1517-1520. (in Chinese)
Finisar Corporation. Datacom & Telecom Network Diagrams[EB/OL].[2015-12-07]. https://www. finisar. com/sites/default/files/resources/datacom_telecom_diagrams_handout_apr2015.pdf.
JEWELL J, GRAHAM L, CROM M, et al.. 1310 nm VCSELs in 1-10 Gb/s commercial applications[J]. SPIE, 2006, 6132:613204.
王立军,宁永强,秦莉,等. 大功率半导体激光器研究进展[J]. 发光学报, 2015, 36(1):1-19. WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J]. Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)
贾鹏,秦莉,张星,等. 大功率VCSEL三角列阵的空间相干性[J]. 发光学报, 2015, 36(6):673-678. JIAP, QIN L, ZHANG X, et al.. Spatial coherence of high power VCSEL triangular-array[J]. Chin. J. Lumin., 2015, 36(6):673-678. (in Chinese)
KOYAMA F, KINOSHITA S, IGA K. Room temperature CW operation of GaAs vertical cavity surface emitting laser[J]. IEICE Trans., 1988, E71(11):1089-1090.
JR HARRIS J S. GaInNAs long-wavelength lasers:progress and challenges[J]. Semicond. Sci. Technol., 2002, 17(8):880-891.
江剑平.半导体激光器[M]. 北京:电子工业出版社, 2000:187-188. JIANG J P. Semiconductor Lasers[M]. Beijing:Publishing House of Electronics Industry, 2000:187-188. (in Chinese)
LIN C K, BOUR D P, ZHU J T, et al.. High temperature continuous-wave operation of 1.3- and 1.55-m VCSELs with InP/air-gap DBRs[J]. IEEE J. Select. Top. Quant. Electron., 2003, 9(5):1415-1421.
佟存柱. 1.3m GaAs基量子阱、量子点垂直腔面发射激光器[D]. 北京:中国科学院研究生院, 2005. TONG C Z. 1.3m GaAs Based Quantum Wells and Quantum Dots Vertical Cavity Surface Emitting Lasers[D]. Beijing:Graduate School of Chinese Academy of Sciences, 2005. (in Chinese)
ONISHI Y, SAGA N, KOYAMA K, et al.. High power and low resistive GaInNAs-VCSELs with buried tunnel junctions[C]. Proceedings of The 21st International Semiconductor Laser Conference, Sorrento, 2008:53-54.
KONDOW M, KITATANI T, NAKATSUKA S, et al.. GaInNAs:a novel material for long-wavelength semiconductor lasers[J]. IEEEJ. Select. Top. Quant. Electron., 1997, 3(3):719-730.
ONISHI Y, SAGA N, KOYAMA K, et al. Long-wavelength GaInNAs vertical-cavity surface-emitting laser with buried tunnel junction[J]. IEEEJ. Select. Topics Quant. Electron., 2009, 15(3):838-843.
DUDLEY J J, BABIC'D I, MIRIN R, et al.. Low threshold, wafer fused long wavelength vertical cavity lasers[J]. Appl. Phys. Lett., 1994, 64(12):1463-1465.
KLEM J F, BLUM O, KURTZ S R, et al.. GaAsSb/InGaAs type-Ⅱ quantum wells for long-wavelength lasers on GaAs substrates[J]. J. Vac. Sci. Technol. B, 2000, 18(3):1605-1608.
江德生,王江波,NAVARRO C,等. GaAsSb/GaAs量子阱激光器结构的发光研究[J]. 红外与毫米波学报, 2002, 21(S):7-10. JIANG D S, WANG J B, NAVARRO C, et al.. Luminescence properties of GaAsSb/GaAs quantum well laser structures[J]. J. Infrared Milim. Waves, 2002, 21(S):7-10. (in Chinese)
LUO X D, BIAN L F, XU Z Y, et al.. Study of optical properties in GaAs1-xSbx/ GaAs single quantum wells[J]. Acta Phys. Sinica, 2003, 52(7):1761-1765.
ANAN T, YAMADA, NISHI K, et al.. Continuous-wave operation of 1.30m GaAsSb/GaAs VCSELs[J]. Electron. Lett., 2001, 37(9):566-567.
DOWD I, JOHNSON S R, FELD S A, et al.. Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications[J]. Electron. Lett., 2003, 39(13):987-988.
张妍. InGaAsP/InP多量子阱激光器的研究[D]. 北京:北京邮电大学, 2012. ZHANG Y. Research on InGaAs Multiply Quantum Well (MQW) Lasers[D]. Beijing:Beijing University of Posts and Telecommunications, 2012. (in Chinese)
ZHU Z, ZHANG X, LI P X, et al.. Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer[J]. J. Semicond., 2015, 36(1):014011-1-3.
JAYARAMAN V, MEHTA M, JACKSON A W, et al.. High-power 1320-nm wafer-bonded VCSELs with tunnel junctions[J]. IEEE Photon. Technol. Lett., 2003, 15(11):1495-1497.
IGA K. Vertical-cavity surface-emitting laser:its conception and evolution[J]. Jpn. J. Appl. Phys., 2008, 47(1):1-10.
ZUO Z Y, XIA W, WANG G, et al.. Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector[J]. J. Semicond., 2015, 36(2):024011-1-5.
陈博. 长波长AlGaInAs/InP应变多量子阱激光器研制[D]. 北京:中国科学院半导体研究所, 1999. CHEN B. Long Wavelenght AlGaInAs/InP Strained Layer Multi-quantum Well Laser[D]. Beijing:Institute of Semiconductors, Chinese Academy of Sciences, 1999. (in Chinese)
NISHIYAMA N, CANEAU C, HALL B, et al.. Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD[J]. IEEEJ. Select. Top. Quant. Electron., 2005, 11(5):990-998.
HOFMANN W, ORTSIEFER M, RNNEBERG E, et al.. 1.3m InGaAlAs/InP VCSEL for 10G ethernet[C]. Proceedings of The 21st International Semiconductor Laser Conference, Sorrento, 2008:11-12.
SIRBU A, IAKOVLEV V, KELLER S T, et al.. Advanced 1.3m vertical cavity lasers based on AlInGaAs/InP-AlGaAs/GaAs fused structures[C]. Proceedings of The 17th International Conference on Transparent Optical Networks, Budapest, 2015:1-3.
KE Q, TAN S Y, LIU S T, et al.. Fabrication and optimization of 1.55-m InGaAsP/InP high-power semiconductor diode laser[J]. J. Semicond., 2015, 36(9):094010-1-4.
岳爱文. 1.3m GaInNAs/GaAs垂直腔面发射激光器的优化设计与制作[D]. 武汉:武汉大学, 2004. YUE A W. The Design Optimization and The Fabrication of The 1.3m GaInNAs/GaAs Vertical Cavity Surface Emitting Laser[D]. Wuhan:Wuhan University, 2004. (in Chinese)
LAO Y F, CAO C F, WU H Z, et al.. Fabrication of InAsP/InGaAsP quantum-well 1.3m VCSELs by direct wafer-bonding[J]. J. Semicond., 2008, 29(11):2286-2291.
NAKAGAWA S, HALL E, ALMUNEAU G, et al.. 1.55-m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs[J]. IEEE J. Select. Top. Quant. Electron., 2001, 7(2):224-230.
MEREUTA A, SIRBU A, CALIMAN A, et al.. Fabrication and performance of 1.3-m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE[J]. J. Cryst. Growth, 2015, 414:210-214.
0
浏览量
41
下载量
2
CSCD
关联资源
相关文章
相关作者
相关机构