电子辐照GaN基LED的缺陷光学性能研究

牛萍娟; 吴英蕾; 于莉媛; 朱文睿; 刘超; 杨洁

doi:10.3788/fgxb20163707.0798

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电子辐照GaN基LED的缺陷光学性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- 电子辐照GaN基LED的缺陷光学性能研究
- Optical Properties of Defects in GaN Based LED Irradiated by Electron
- 发光学报 2016年37卷第7期页码：798-803
- 作者机构：
  
  1. 天津工业大学电气工程与自动化学院天津,300387
  2. 天津工业大学电子与信息工程学院天津,300387
- 作者简介：
- 基金信息：
  
  国家自然科学基金青年基金(11204211)();天津市应用基础与前沿技术研究计划(13JCQNJC00700)资助项目()
- DOI：10.3788/fgxb20163707.0798
  中图分类号： TN312.8
- 纸质出版日期：2016-7-5，
  
  收稿日期：2016-1-29，
  
  修回日期：2016-3-24，
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牛萍娟, 吴英蕾, 于莉媛等. 电子辐照GaN基LED的缺陷光学性能研究[J]. 发光学报, 2016,37(7): 798-803

NIU Ping-juan, WU Ying-lei, YU Li-yuan etc. Optical Properties of Defects in GaN Based LED Irradiated by Electron[J]. Chinese Journal of Luminescence, 2016,37(7): 798-803
牛萍娟, 吴英蕾, 于莉媛等. 电子辐照GaN基LED的缺陷光学性能研究[J]. 发光学报, 2016,37(7): 798-803 DOI： 10.3788/fgxb20163707.0798.

NIU Ping-juan, WU Ying-lei, YU Li-yuan etc. Optical Properties of Defects in GaN Based LED Irradiated by Electron[J]. Chinese Journal of Luminescence, 2016,37(7): 798-803 DOI： 10.3788/fgxb20163707.0798.

摘要

采用基于第一性原理计算的平面波超软赝势方法

计算电子辐照后由简单缺陷引起的GaN外延材料的光学性能变化。首先计算出本征GaN晶体的性质作为研究缺陷性质变化的参照

着重分析了V

、V

、Ga

、Mg

-O

、Mg

-V

、V

-O

等缺陷对光吸收谱的影响。由于InGaN多量子阱是主要的LED发光来源

还对不同In摩尔分数掺杂下的GaN进行了光学性质研究。结果表明:V

、Ga

和In掺杂等缺陷使GaN主吸收峰出现红移且吸收系数均降低;而V

、Mg

-O

、V

-O

均使GaN的主吸收峰出现蓝移

只是Mg

缺陷使主吸收峰峰值增加

其余缺陷均使主峰吸收系数降低;Mg

-V

仅仅减小了主峰峰值

并未改变光子吸收波长。研究结果表明

电子辐照后的缺陷会使材料性能发生变化。

Abstract

The plane wave ultra soft pseudo potential method based on the first principle is used to calculate the optical properties of GaN epitaxial materials caused by point defects after electron irradiation. First

the properties of the intrinsic GaN crystal are calculated as a reference for the study of the variation of the defect properties. The effects of the defects of V

-O

-V

-O

on the optical absorption spectra are emphatically analyzed. As the InGaN multi quantum well is the main source of LED emission

the optical properties of GaN doped with different In mole fraction are also studied. The results show that V

and doing of In make the GaN absorption peak red shift and the absorption coefficient decreases. V

-O

all make the main absorption peaks of GaN appear blue shift. Mg

defect makes the main absorption peak's value increase

and the remaining defects make the main peak absorption coefficient decrease. Mg

-V

only decreases the main peak value

does not change the photon absorption wavelength. It is confirmed that the defects can make the material properties change after electron irradiation.

关键词

第一性原理计算电子辐照GaN缺陷光学性能

Keywords

first-principles calculationelectron irradiationGaNpoint defectsoptical properties

references

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