非晶态Si/SiNx超晶格材料的发光与非线性光学特性

申继伟; 罗为; 杜锦丽

doi:10.3788/fgxb20163707.0773

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非晶态Si/SiN_x超晶格材料的发光与非线性光学特性

材料合成及性能 | 更新时间：2020-08-12

- 非晶态Si/SiN_x超晶格材料的发光与非线性光学特性
- Linear and Nonlinear Optical Properties of a-Si/SiN_x Superlattice
- 发光学报 2016年37卷第7期页码：773-777
- 作者机构：
  
  1. 南京理工大学紫金学院电子工程与光电技术学院,江苏南京,210046
  2. 中国药科大学理学院,江苏南京,210096
- 作者简介：
- 基金信息：
  
  江苏省高校自然科学研究项目(14KJD470005)资助()
- DOI：10.3788/fgxb20163707.0773
  中图分类号： O484
- 纸质出版日期：2016-7-5，
  
  收稿日期：2016-1-29，
  
  修回日期：2016-5-20，
扫描看全文
申继伟, 罗为, 杜锦丽. 非晶态Si/SiNx超晶格材料的发光与非线性光学特性[J]. 发光学报, 2016,37(7): 773-777

SHEN Ji-wei, LUO Wei, DU Jin-li. Linear and Nonlinear Optical Properties of a-Si/SiNx Superlattice[J]. Chinese Journal of Luminescence, 2016,37(7): 773-777
申继伟, 罗为, 杜锦丽. 非晶态Si/SiNx超晶格材料的发光与非线性光学特性[J]. 发光学报, 2016,37(7): 773-777 DOI： 10.3788/fgxb20163707.0773.

SHEN Ji-wei, LUO Wei, DU Jin-li. Linear and Nonlinear Optical Properties of a-Si/SiNx Superlattice[J]. Chinese Journal of Luminescence, 2016,37(7): 773-777 DOI： 10.3788/fgxb20163707.0773.

摘要

采用射频磁控反应溅射技术制备了a-Si/SiN

超晶格材料

并采用热退火技术对材料进行处理。利用吸收光谱和X射线衍射谱对材料进行表征

结果表明Si层呈现非晶态。为研究材料的三阶非线性光学特性

对材料进行Z扫描研究

测量数据表明

材料的非线性吸收为反饱和吸收

材料非线性折射率呈现为负值

该材料的

(3)

的实部为4.5710

-17

C(1.3910

-7

esu)

虚部为1.4910

-17

C (4.4810

-8

esu)

该极化率数值比体硅材料的

(3)

值大5个数量级。对该材料非线性光学产生的机理进行了研究

认为材料体现出的较强的量子限制效应是非线性极化率增强的主要来源。

Abstract

Using RF magnetron sputtering technique and thermal annealing

a-Si/SiN

superlattice was fabricated. The absorption measurement and X-ray diffraction show that the Si layer is amorphous. The Z-scan technique is used to research the nonlinear optical properties of a-Si/a-SiN

superlattice. The results indicate that the nonlinear absorption is counter-saturated absorption and the nonlinear refractive index of the sample is a negative value. Moreover

the real and imaginary parts of

(3)

have been calculated to be 4.5710

-17

C(1.3910

-7

esu) and 1.4910

-17

C (4.4810

-8

esu)

respectively

which exceeds the value of bulk silicon by more than five order of magnitude. The enhancement of nonlinear refractive index of Si/SiN

superlattice is mainly attributed to intensive quantum confinement.

关键词

a-Si/SiNx超晶格非线性光学Z扫描量子限制效应

Keywords

a-Si/SiNx superlatticenonlinear opticalZ-scanquantum confinement

references

MARTNEZ A, HERNNDEZ S, PELLEGRINO P, et al.. Optical nonlinearities in Si-nanocrystals at 1064 nm excited by nanosecond-pulses[J]. J. Appl. Phys., 2010, 108(1):014311-1-6.

IMAKITA K, ITO M, FUJII M, et al.. Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method[J]. J. Appl. Phys., 2009, 105(9):093531-1-5.

TOUDERT J, FERNANDEZ H, BABONNEAU D, et al.. Linear and third-order nonlinear optical responses of multilayered Ag:Si3N4 nanocomposites[J]. Nanotechnology, 2009, 20(47):475705-1-7.

COTTER D, BURT M G, MANNING R J. Below-band-gap third-order optical nonlinearity of nanometer-size semiconductor crystallites[J]. Phys. Rev. Lett., 1992, 68(8):1200-1203.

XIA J B, CHEAH K W. Quantum confinement effect in silicon quantum-well layers[J]. Phys. Rev. B, 1997, 56(23):14925-14928.

LIU N N, SUN J M, PAN S H, et al.. Third-order optical nonlinear properties of amorphous Si/SiO2 superlattices fabricated by magnetron sputtering[J]. Opt. Commun., 2000, 176(1-3):239-243.

ABELES B. Amorphous semiconductor superlattices[J]. Superlattice. Microst., 1989, 5(4):473-480.

WANG L, HUANG X, MA Z, et al.. Thermal annealing of a-Si:H/a-SiNx:H multilayers[J]. Appl. Phys. A, 2002, 74(6):783-786.

MONROY B M, SANTANA G, AGUILAR-HERNNDEZ J, et al.. Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition[J]. J. Lumin., 2006, 121(2):349-352.

张春华,郭亨群,王国立,等. a-Si/a-SiNx超晶格材料光学特性[J]. 功能材料与器件学报, 2009, 15(3):223-227. ZHANG C H, GUO H Q, WANG G L, et al.. Optical properties of a-Si/a-SiNx superlattices[J]. J. Funct. Mater. Dev., 2009, 15(3):223-227. (in Chinese)

申继伟,郭亨群,吕蓬,等. Si/SiNx超晶格材料的非线性光学特性[J]. 发光学报, 2008, 29(6):1045-1049. SHEN J W, GUO H Q, LV P, et al.. Nonlinear optical properties of Si/SiNx superlattice[J]. Chin. J. Lumin., 2008, 29(6):1045-1049. (in Chinese)

FEJFAR A, ZEMEK J, TRCHOVM. Hydrogen and nitrogen bonding in silicon nitride layers deposited by laser reactive ablation:infrared and X-ray photoelectron study[J]. Appl. Phys. Lett., 1995, 67(22):3269-3271.

孟祥森,宋晨路,余京松,等. 低温APCVD法制备氮化硅薄膜[J]. 陶瓷学报, 1999, 20(3):119-122. MENG X S, SONG C L, YU J S, et al.. Silicon nitride thin films prepared by low temperature atmosptheric perssure chemical vapor deposition[J]. J. Ceram., 1999, 20(3):119-122. (in Chinese)

TSU D V, LUCOVSKY G, MANTINI M J. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition[J]. Phys. Rev. B, 1986, 33(10):7069-7076.

WANG L, MA Z Y, HUANG X F, et al.. The room-temperature visible photoluminescence from nanocrystalline Si in Si/SiNx superlattices[J]. Solid State Commun., 2001, 117(4):239-244.

SHEIK-BAHAE M, SAID A A, WEI T H, et al.. Sensitive measurement of optical nonlinearities using a single beam[J]. IEEE J. Quant. Electron., 1990, 26(4):760-769.

HERNNDEZ S, PELLEGRINO P, MARTNEZ A, et al.. Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by plasma-enhanced chemical-vapor deposition[J]. J. Appl. Phys., 2008, 103(6):064309-1-6.

PRAKASH G V, CAZZANELLI M, GABURRO Z, et al.. Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition[J]. J. Appl. Phys., 2002, 91(7):4607-4610.

徐明,魏屹,何贤模,等. Si/SiNx多层膜能带结构的理论研究[J]. 四川师范大学学报(自然科学版), 2010, 33(4):545-548. XU M, WEI Y, HE X M, et al.. Theoretic study on band structure of Si/SiNx multilayer film[J]. J. Sichuan Norm. Univ. (Nat. Sci.), 2010, 33(4):545-548. (in Chinese)

YILDIRIM H, BULUTAY C. Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals:a theoretical assessment[J]. Opt. Commun., 2008, 281(15-16):4118-4120.

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