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1. 中国计量学院 光学与电子科技学院,浙江 杭州,310018
2. 兰州大学物理科学与技术学院,甘肃 兰州,730000
纸质出版日期:2016-06-05,
收稿日期:2016-01-07,
修回日期:2016-03-21,
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郑亚开, 韦一, 孙磊等. 衬底温度对TiOPc光敏有机场效应管的影响[J]. 发光学报, 2016,37(6): 725-730
ZHENG Ya-kai, WEI Yi, SUN Lei etc. Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine[J]. Chinese Journal of Luminescence, 2016,37(6): 725-730
郑亚开, 韦一, 孙磊等. 衬底温度对TiOPc光敏有机场效应管的影响[J]. 发光学报, 2016,37(6): 725-730 DOI: 10.3788/fgxb20163706.0725.
ZHENG Ya-kai, WEI Yi, SUN Lei etc. Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine[J]. Chinese Journal of Luminescence, 2016,37(6): 725-730 DOI: 10.3788/fgxb20163706.0725.
制备了基于酞菁氧钛(TiOPc)的有机光敏场效应管
对氧化铟锡(ITO)衬底器件进行温度优化。实验结果表明
随着衬底温度(
T
sub
)的增加
器件载流子迁移率(
)、光暗电流比(
P
)和光响应度(
R
)先增加后减小
在
T
sub
=140℃时达到最大。
T
sub
=140℃的ITO衬底器件
在波长808nm、光功率密度190mWcm
-2
的近红外光照下
最大载流子迁移率达到1.3510
-2
cm
2
V
-1
s
-1
最大光暗电流比为250
栅压为-50V时的最大光响应度为1.51mA/W。
Organic field-effect transistors(OFETs) based on titanyl-phthalocyanine (TiOPc) were fabricated
and the temperature of ITO substrate(
T
sub
) was optimized. The results show that the carrier mobility(
)
photosensitivity(
P
)
and photoresponsivity(
R
) increase firstly
and then decrease with the increasing of
T
sub
. When
T
sub
=140 ℃
OFETs exhibit a maximum carrier mobility of 1.3510
-2
cm
2
V
-1
s
-1
a maximum photosensitivity of 250
and a maximum photoresponsivity of 1.51 mA/W under the illumination by a laser diode with a wavelength of 808 nm and power density of 190 mWcm
-2
.
有机光敏场效应管酞菁氧钛衬底温度
photoresponsive organic field-effect transistorstitanyl-phthalocyaninetemperature of substrate
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