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1. 中国科学院大学 北京,100049
2. 中国科学院半导体研究所 半导体照明研发中心 北京,100083
3. 半导体照明联合创新国家重点实验室 北京,100083
4. 北京市第三代半导体材料及应用技术工程中心 北京,100083
纸质出版日期:2016-06-05,
收稿日期:2016-01-21,
修回日期:2016-03-07,
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赵勇兵, 张韵, 程哲等. 具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(6): 720-724
ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing[J]. Chinese Journal of Luminescence, 2016,37(6): 720-724
赵勇兵, 张韵, 程哲等. 具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(6): 720-724 DOI: 10.3788/fgxb20163706.0720.
ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing[J]. Chinese Journal of Luminescence, 2016,37(6): 720-724 DOI: 10.3788/fgxb20163706.0720.
介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积(ALD)方法实现Al
2
O
3
栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长(
L
g
)为2 m
栅宽(
W
g
)为0.9 mm(0.45 mm2)
栅极和源极(
L
gs
)之间的距离为5 m
栅极和漏极(
L
gd
)之间的距离为10 m。在栅压为-20 V时
槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时
槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为-20~+12 V。在栅压
V
gs
=+10 V时
槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm (
W
g
=0.9 mm)
特征导通电阻为4 mcm
2
。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V
开启与关断电流比达到了510
8
。当
V
ds
=7 V时
器件的峰值跨导为42 mS/mm (
W
g
=0.9 mm
V
gs
=+10 V)。在
V
gs
=0 V时
栅漏间距为10 m的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V
关断泄露电流为0.025 mA/mm。
This essay has reported normally-off operation of an AlGaN/GaN recessed MOS-gate high electron mobility transistor(MOS-gate HEMT) fabricated by the inductively coupled plasma(ICP) recessed technique. A 40-nm Al
2
O
3
film was deposited by the atomic layer deposition(ALD) as the gate dielectric. The normally-off recessed MOS-gate AlGaN/GaN HEMT with a gate length of 2 m and a gate width of 0.9 mm exhibits a high threshold voltage of+4.6 V
a specific on-resistance of 4 mcm
2
and a drain current density of 108 mA/mm (at a positive gate bias of 10 V). When the gate bias (
V
gs
) is 0 V
the breakdown voltage(BV) of 450 V has been achieved at a drain leakage current of 0.025 mA/mm for the recessed MOS-gate HEMT with a gate-drain distance of 10 m. The on/off drain-current ratio (I
on
/I
off
) is 510
8
for the recessed MOS-gate HEMT. Under a negative gate bias of -20 V
the gate leakage current of the recessed MOS-gate HEMT was 0.65 nA.
AlGaN/GaN高阈值电压大栅压摆幅常关型特征导通电阻
AlGaN/GaNhigh threshold voltagelarge gate swingnormally-offspecific on resistance
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