电荷耦合器件的&gamma;辐照剂量率效应研究

武大猷; 文林; 汪朝敏; 何承发; 郭旗; 李豫东; 曾俊哲; 汪波; 刘元

doi:10.3788/fgxb20163706.0711

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电荷耦合器件的γ辐照剂量率效应研究

器件制备及器件物理 | 更新时间：2020-08-12

- 电荷耦合器件的γ辐照剂量率效应研究
- Dose Rate Effects of γ Irradiation on CCDs
- 发光学报 2016年37卷第6期页码：711-719
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 重庆光电技术研究所重庆,400060
  3. 中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 中国科学院新疆理化技术研究所,新疆乌鲁木齐,830011
- 作者简介：
- 基金信息：
  
  国家自然科学基金(11005152);中国科学院;西部之光"人才培养计划重点项目"CCD的空间位移损伤效应及评估技术研究"资助
- DOI：10.3788/fgxb20163706.0711
  中图分类号： TP212.14;TN386.5
- 纸质出版日期：2016-06-05，
  
  收稿日期：2016-02-03，
  
  修回日期：2016-03-15，
- 稿件说明：
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武大猷, 文林, 汪朝敏等. 电荷耦合器件的γ辐照剂量率效应研究[J]. 发光学报, 2016,37(6): 711-719

WU Da-you, WEN Lin, WANG Chao-min etc. Dose Rate Effects of γ Irradiation on CCDs[J]. Chinese Journal of Luminescence, 2016,37(6): 711-719
武大猷, 文林, 汪朝敏等. 电荷耦合器件的γ辐照剂量率效应研究[J]. 发光学报, 2016,37(6): 711-719 DOI： 10.3788/fgxb20163706.0711.

WU Da-you, WEN Lin, WANG Chao-min etc. Dose Rate Effects of γ Irradiation on CCDs[J]. Chinese Journal of Luminescence, 2016,37(6): 711-719 DOI： 10.3788/fgxb20163706.0711.

摘要

对电荷耦合器件进行了不同剂量率的辐照实验

通过多种参数的测试探讨了剂量率与电荷耦合器件性能退化的关系

并对损伤的物理机理进行分析。辐照和退火结果表明:暗信号和暗信号非均匀性是辐照的敏感参数

电荷转移效率和饱和输出电压随剂量累积有缓慢下降的趋势;暗场像素灰度值整体抬升

像元之间的差异显著增加;电荷耦合器件的暗信号增量与剂量率呈负相关性

器件存在潜在的低剂量率损伤增强效应。分析认为

剂量率效应是由界面态和氧化物陷阱电荷竞争导致的。通过电子-空穴对复合模型、质子输运模型和界面态形成对机理进行了解释。

Abstract

The experiments of dose rate on charge coupled devices(CCDs) were carried out to investigate the relationship between the dose rate and the electrical parameters of the device

and the degradation mechanism was analyzed. With the accumulation of the dose

the dark signal (DS)and dark non-uniformly signal(DNS) increase significantly

and the both charge transfer efficiency (CTE)and saturation output voltage(SOV) tend to decrease slowly. The whole dark pixel value uplifts and the non-uniform between pixels becomes obviously. The dark signal of the CCD is negatively correlated with the dose rate

and the device presents the potential of the-low-dose-rate-damage enhancement effect. It is considered that the dose rate effect is caused by the competition between the interface states and oxide traps

and the mechanism is explained by the electron-hole pair recombination model and the damage model in the annealing process.

关键词

电荷耦合器件暗信号低剂量率损伤增强效应暗场像素统计

Keywords

charge coupled devicedark signalenhanced low-dosed rate sensitivitydark pixel statistics

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CMOS图像传感器在质子辐照下热像素的产生和变化规律

电荷耦合器件中子辐照诱发的位移效应

电荷耦合器件的γ辐照剂量率效应研究

Dose Rate Effects of γ Irradiation on CCDs

DOI：10.3788/fgxb20163706.0711

摘要

Abstract

关键词

Keywords

references