大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管

王飞飞; 李新坤; 梁德春; 金鹏; 王占国

doi:10.3788/fgxb20163706.0706

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大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管

器件制备及器件物理 | 更新时间：2020-08-12

- 大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管
- High-power Short-wavelength InAlGaAs/AlGaAs Quantum-dot Superluminescent Diodes
- 发光学报 2016年37卷第6期页码：706-710
- 作者机构：
  
  1. 中国科学院半导体研究所半导体材料科学重点实验室, 低维半导体材料与器件北京市重点实验室北京,100083
  2. 北京航天控制仪器研究所北京,100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61274072,61306087);"863"国家高技术研究发展计划(2013AA014201)资助项目
- DOI：10.3788/fgxb20163706.0706
  中图分类号： TN383
- 纸质出版日期：2016-06-05，
  
  收稿日期：2016-02-19，
  
  修回日期：2016-03-10，
- 稿件说明：
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王飞飞, 李新坤, 梁德春等. 大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管[J]. 发光学报, 2016,37(6): 706-710

WANG Fei-fei, LI Xin-kun, LIANG De-chun etc. High-power Short-wavelength InAlGaAs/AlGaAs Quantum-dot Superluminescent Diodes[J]. Chinese Journal of Luminescence, 2016,37(6): 706-710
王飞飞, 李新坤, 梁德春等. 大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管[J]. 发光学报, 2016,37(6): 706-710 DOI： 10.3788/fgxb20163706.0706.

WANG Fei-fei, LI Xin-kun, LIANG De-chun etc. High-power Short-wavelength InAlGaAs/AlGaAs Quantum-dot Superluminescent Diodes[J]. Chinese Journal of Luminescence, 2016,37(6): 706-710 DOI： 10.3788/fgxb20163706.0706.

摘要

为了满足超辐射发光管的短波长应用

采用InAlGaAs/AlGaAs量子点有源区和干法刻蚀工艺制备了短波长弯曲波导超辐射发光管。在1.6A脉冲电流注入下

器件峰值输出功率为29mW

中心波长为880nm

光谱半高宽为20.3nm。比较了干法刻蚀工艺和湿法腐蚀工艺对超辐射发光管器件性能的影响。在1.6A脉冲电流注入下

湿法腐蚀制备的器件峰值输出功率仅为7mW。与湿法腐蚀相比

干法刻蚀可以精确控制波导形状和参数

降低波导损耗

有效增大器件输出功率。

Abstract

In order to meet the short-wavelength applications of the superluminescent diodes

a bent-waveguide superluminescent diode was fabricated by using InAlGaAs/AlGaAs quantum-dot active region and dry etching process. The peak output power up to 29 mW with the wavelength centered at 880 nm and the full-width at half-maximum of 20.3 nm were obtained. Also the influences of wet etching and dry etching on the device properties were compared. At 1.6 A pulsed current injection

the peak output power of the device fabricated by wet etching is only 7 mW. Compared with wet etching

dry etching can precisely control the shape and parameters of the waveguide

leading to smaller waveguide loss and higher output power.

关键词

超辐射发光管自组织量子点干法刻蚀

Keywords

superluminescent diodesself-assembled quantum dotdry etching

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