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1. 北京工业大学 激光工程研究院 北京,100124
2. 瑞德兴阳新能源技术有限公司,广东 中山,528437
纸质出版日期:2016-06-05,
收稿日期:2016-02-03,
修回日期:2016-03-10,
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张奇灵, 尧舜, 杨翠柏等. 不同周期数的GaInAs/GaAsP多量子阱太阳能电池[J]. 发光学报, 2016,37(6): 701-705
ZHANG Qi-ling, YAO Shun, YANG Cui-bai etc. GaInAs/GaAsP Multiple Quantum Well Solar Cells with Different Periods[J]. Chinese Journal of Luminescence, 2016,37(6): 701-705
张奇灵, 尧舜, 杨翠柏等. 不同周期数的GaInAs/GaAsP多量子阱太阳能电池[J]. 发光学报, 2016,37(6): 701-705 DOI: 10.3788/fgxb20163706.0701.
ZHANG Qi-ling, YAO Shun, YANG Cui-bai etc. GaInAs/GaAsP Multiple Quantum Well Solar Cells with Different Periods[J]. Chinese Journal of Luminescence, 2016,37(6): 701-705 DOI: 10.3788/fgxb20163706.0701.
为了研究不同量子阱周期数下GaInAs/GaAsP多量子阱太阳能电池性能的变化规律
利用金属有机化学气相沉积技术(MOCVD)制备了不同周期数的双结多量子阱太阳能电池样品以及无量子阱双结结构的参考样品
利用高分辨率X射线衍射仪(HXRD)和高分辨率透射电镜(TEM)测试了样品的晶体质量
同时在AM0(1)光谱条件下测试了样品的
I-V
特性曲线和相应子电池的外量子效率。最终得到了高晶体质量、吸收截止波长在954nm的Ga
0.89
In
0.11
As/GaAs
0.92
P
0.08
多量子阱结构
扩展波段的外量子效率最高达到75.18%
电池光电转换效率相对于无量子阱结构提升2.77%。通过对比测试结果发现
随着量子阱结构周期数的增加
太阳能电池在扩展波段(890~954nm)的外量子效率不断提高
常规波段的短波响应(300~700nm)会出现下降
长波响应(700~890nm)会出现上升
短路电流和转换效率相应提升并趋于饱和。
In order to study the GaInAs/GaAsP multiple quantum well solar cells (MQW-SC) with different periods
double-junction solar cell samples with different periods quantum well (QW) and reference sample without QW were grown by metalorganic chemical vapor deposition (MOCVD). The crystal quality of the samples was judged by high resolution X-ray diffraction (HXRD) and high resolution transmission electron microscopy (TEM).
I-V
curves and external quantum efficiency (EQE) of samples were measured under AM0 (1) spectra. Relative to the non-QW sample
the absorption spectra of QW samples extend from 890 nm to 954 nm
the highest external quantum efficiency of the extending spectra achieves 75.18%
the conversion efficiency increases by 2.77%. With the increased periods of quantum wells structure
the response of the extending spectra and the longer wavelengths (700-890 nm) in the conventional spectra increase
while in the shorter wavelengths (300-700 nm) the response has a fall. Eventually
the short circuit current and the efficiency of the cells are improved and finally tend to be steady.
GaInAs/GaAsP量子阱外量子效率太阳能电池
GaInAs/GaAsPquantum wellEQEsolar cell
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SHOCKLEY W, QUEISSER H J. Detailed balance limit of efficiency of p-n junction solar cells [J]. J. Appl. Phys., 1961, 32(3):510-519.
BROWNE B, LACEY J, TIBBITS T, et al.. Triple-junction quantum-well solar cells in commercial production [C]. Proceedings of The 9th International Conference on Concentrator Photovoltaic Systems: CPV-9, Miyazaki, Japan, 2013, 1556(1):3-5.
BARNHAM K W J, BALLARD I, BESSIRE A, et al.. Quantum Well Solar Cells and Quantum Dot Concentrators [M]. Amsterdam: Elsevier, 2006:517.
ADAMS J G J, ELDER W, STAVRINOU P N, et al.. Experimental measurement of restricted radiative emission in quantum well solar cells [C]. Proceedings of The 35th IEEE Photovoltaic Specialists Conference, Honolulu, USA, 2010:000001-000005.
EBERT C, PULWIN Z, REYNOLDS C L, et al.. Optimization of MOCVD grown MQW structures for triple junction solar cells [C]. Proceedings of The 38th IEEE Photovoltaic Specialists Conference, Austin, USA, 2012:001465-001470.
WEN Y, WANG Y P, NAKANO Y. Suppressed indium diffusion and enhanced absorption in InGaAs/GaAsP stepped quantum well solar cell [J]. Appl. Phys. Lett., 2012, 100(5):053902-1-3.
EKINS-DAUKES N J, KAWAGUCHI K, ZHANG J. Strain-balanced criteria for multiple quantum well structures and its signature in X-ray rocking curves [J]. Cryst. Growth Des., 2002, 2(4):287-292.
丁美斌,娄朝刚,王琦龙,等. GaAs量子阱太阳能电池量子效率的研究 [J]. 物理学报, 2014, 63(19):198502-1-5. DING M B, LOU C G, WANG Q L, et al.. Influence of quantum wells on the quantum efficiency of GaAs solar cells [J]. Acta Phys. Sinica, 2014, 63(19):198502-1-5. (in Chinese)
PAXMAN M, NELSON J, BRAUN B, et al.. Modeling the spectral response of the quantum well solar cell [J]. J. Appl. Phys., 1993, 74(1):614-621.
CABRERA C I, RIMADA J C, CONNOLLY J P, et al.. Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells [J]. J. Appl. Phys., 2013, 113(2):024512-1-7.
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