不同周期数的GaInAs/GaAsP多量子阱太阳能电池

张奇灵; 尧舜; 杨翠柏; 张杨; 陈丙振; 常晓阳; 王智勇

doi:10.3788/fgxb20163706.0701

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不同周期数的GaInAs/GaAsP多量子阱太阳能电池

器件制备及器件物理 | 更新时间：2020-08-12

- 不同周期数的GaInAs/GaAsP多量子阱太阳能电池
- GaInAs/GaAsP Multiple Quantum Well Solar Cells with Different Periods
- 发光学报 2016年37卷第6期页码：701-705
- 作者机构：
  
  1. 北京工业大学激光工程研究院北京,100124
  2. 瑞德兴阳新能源技术有限公司,广东中山,528437
- 作者简介：
- 基金信息：
  
  北京市委组织部优秀人才培养计划(2012D005015000005);北京市教委项目(KM201110005017)资助
- DOI：10.3788/fgxb20163706.0701
  中图分类号： O472+.8
- 纸质出版日期：2016-06-05，
  
  收稿日期：2016-02-03，
  
  修回日期：2016-03-10，
- 稿件说明：
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张奇灵, 尧舜, 杨翠柏等. 不同周期数的GaInAs/GaAsP多量子阱太阳能电池[J]. 发光学报, 2016,37(6): 701-705

ZHANG Qi-ling, YAO Shun, YANG Cui-bai etc. GaInAs/GaAsP Multiple Quantum Well Solar Cells with Different Periods[J]. Chinese Journal of Luminescence, 2016,37(6): 701-705
张奇灵, 尧舜, 杨翠柏等. 不同周期数的GaInAs/GaAsP多量子阱太阳能电池[J]. 发光学报, 2016,37(6): 701-705 DOI： 10.3788/fgxb20163706.0701.

ZHANG Qi-ling, YAO Shun, YANG Cui-bai etc. GaInAs/GaAsP Multiple Quantum Well Solar Cells with Different Periods[J]. Chinese Journal of Luminescence, 2016,37(6): 701-705 DOI： 10.3788/fgxb20163706.0701.

摘要

为了研究不同量子阱周期数下GaInAs/GaAsP多量子阱太阳能电池性能的变化规律

利用金属有机化学气相沉积技术(MOCVD)制备了不同周期数的双结多量子阱太阳能电池样品以及无量子阱双结结构的参考样品

利用高分辨率X射线衍射仪(HXRD)和高分辨率透射电镜(TEM)测试了样品的晶体质量

同时在AM0(1)光谱条件下测试了样品的

I-V

特性曲线和相应子电池的外量子效率。最终得到了高晶体质量、吸收截止波长在954nm的Ga

0.89

0.11

As/GaAs

0.92

0.08

多量子阱结构

扩展波段的外量子效率最高达到75.18%

电池光电转换效率相对于无量子阱结构提升2.77%。通过对比测试结果发现

随着量子阱结构周期数的增加

太阳能电池在扩展波段(890~954nm)的外量子效率不断提高

常规波段的短波响应(300~700nm)会出现下降

长波响应(700~890nm)会出现上升

短路电流和转换效率相应提升并趋于饱和。

Abstract

In order to study the GaInAs/GaAsP multiple quantum well solar cells (MQW-SC) with different periods

double-junction solar cell samples with different periods quantum well (QW) and reference sample without QW were grown by metalorganic chemical vapor deposition (MOCVD). The crystal quality of the samples was judged by high resolution X-ray diffraction (HXRD) and high resolution transmission electron microscopy (TEM).

I-V

curves and external quantum efficiency (EQE) of samples were measured under AM0 (1) spectra. Relative to the non-QW sample

the absorption spectra of QW samples extend from 890 nm to 954 nm

the highest external quantum efficiency of the extending spectra achieves 75.18%

the conversion efficiency increases by 2.77%. With the increased periods of quantum wells structure

the response of the extending spectra and the longer wavelengths (700-890 nm) in the conventional spectra increase

while in the shorter wavelengths (300-700 nm) the response has a fall. Eventually

the short circuit current and the efficiency of the cells are improved and finally tend to be steady.

关键词

GaInAs/GaAsP量子阱外量子效率太阳能电池

Keywords

GaInAs/GaAsPquantum wellEQEsolar cell

references

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SHOCKLEY W, QUEISSER H J. Detailed balance limit of efficiency of p-n junction solar cells [J]. J. Appl. Phys., 1961, 32(3):510-519.

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WEN Y, WANG Y P, NAKANO Y. Suppressed indium diffusion and enhanced absorption in InGaAs/GaAsP stepped quantum well solar cell [J]. Appl. Phys. Lett., 2012, 100(5):053902-1-3.

EKINS-DAUKES N J, KAWAGUCHI K, ZHANG J. Strain-balanced criteria for multiple quantum well structures and its signature in X-ray rocking curves [J]. Cryst. Growth Des., 2002, 2(4):287-292.

丁美斌,娄朝刚,王琦龙,等. GaAs量子阱太阳能电池量子效率的研究 [J]. 物理学报, 2014, 63(19):198502-1-5. DING M B, LOU C G, WANG Q L, et al.. Influence of quantum wells on the quantum efficiency of GaAs solar cells [J]. Acta Phys. Sinica, 2014, 63(19):198502-1-5. (in Chinese)

PAXMAN M, NELSON J, BRAUN B, et al.. Modeling the spectral response of the quantum well solar cell [J]. J. Appl. Phys., 1993, 74(1):614-621.

CABRERA C I, RIMADA J C, CONNOLLY J P, et al.. Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells [J]. J. Appl. Phys., 2013, 113(2):024512-1-7.

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